KR102159863B1 - 막두께 측정 장치, 기판 검사 장치, 막두께 측정 방법 및 기판 검사 방법 - Google Patents

막두께 측정 장치, 기판 검사 장치, 막두께 측정 방법 및 기판 검사 방법 Download PDF

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KR102159863B1
KR102159863B1 KR1020180119811A KR20180119811A KR102159863B1 KR 102159863 B1 KR102159863 B1 KR 102159863B1 KR 1020180119811 A KR1020180119811 A KR 1020180119811A KR 20180119811 A KR20180119811 A KR 20180119811A KR 102159863 B1 KR102159863 B1 KR 102159863B1
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data
substrate
film
linear
unit
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KR20190040907A (ko
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도모히로 마쓰오
히데키 시미즈
아쓰시 다나카
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가부시키가이샤 스크린 홀딩스
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    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020180119811A 2017-10-11 2018-10-08 막두께 측정 장치, 기판 검사 장치, 막두께 측정 방법 및 기판 검사 방법 Active KR102159863B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017197782A JP6884082B2 (ja) 2017-10-11 2017-10-11 膜厚測定装置、基板検査装置、膜厚測定方法および基板検査方法
JPJP-P-2017-197782 2017-10-11

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KR20190040907A KR20190040907A (ko) 2019-04-19
KR102159863B1 true KR102159863B1 (ko) 2020-09-24

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JP (1) JP6884082B2 (https=)
KR (1) KR102159863B1 (https=)
CN (1) CN109655005B (https=)
TW (1) TWI692614B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116271A (ko) * 2020-03-17 2021-09-27 도쿄엘렉트론가부시키가이샤 막 두께 측정 시스템 및 막 두께 측정 방법

Citations (3)

* Cited by examiner, † Cited by third party
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WO2001027990A1 (en) 1999-10-13 2001-04-19 Koninklijke Philips Electronics N.V. A method and system for polishing semiconductor wafers
US20150228521A1 (en) 2010-12-20 2015-08-13 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers
US20160148850A1 (en) 2014-11-25 2016-05-26 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes

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US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
JPH05240628A (ja) * 1992-03-02 1993-09-17 Toshiba Corp パターン検査装置
JPH0712524A (ja) * 1993-06-24 1995-01-17 Sony Corp 膜厚測定装置
JP3385994B2 (ja) * 1998-02-27 2003-03-10 株式会社ニコン 像検出装置
US6927847B2 (en) * 2001-09-13 2005-08-09 Hitachi High-Technologies Corporation Method and apparatus for inspecting pattern defects
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
JP2005321564A (ja) * 2004-05-07 2005-11-17 Canon Inc 多層膜が形成された光学素子の製造方法
US7339682B2 (en) * 2005-02-25 2008-03-04 Verity Instruments, Inc. Heterodyne reflectometer for film thickness monitoring and method for implementing
JP4786925B2 (ja) * 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
DE202007010784U1 (de) * 2007-08-03 2007-10-04 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Kontaktloses Messsystem
JP2010034133A (ja) * 2008-07-25 2010-02-12 Just:Kk 多結晶シリコンウエハのクラック検出装置
CN201318934Y (zh) * 2008-11-07 2009-09-30 四川南光电气有限责任公司 光学膜厚测试仪
JP6004517B2 (ja) * 2011-04-19 2016-10-12 芝浦メカトロニクス株式会社 基板検査装置、基板検査方法及び該基板検査装置の調整方法
JP5717711B2 (ja) * 2012-12-07 2015-05-13 東京エレクトロン株式会社 基板の基準画像作成方法、基板の欠陥検査方法、基板の基準画像作成装置、基板の欠陥検査ユニット、プログラム及びコンピュータ記憶媒体
JP2014190797A (ja) * 2013-03-27 2014-10-06 Tokushima Densei Kk シリコンウェハの欠陥検査装置
CN104425308B (zh) * 2013-09-09 2018-03-09 东京毅力科创株式会社 测定装置、基板处理系统和测定方法
JP2015127653A (ja) * 2013-12-27 2015-07-09 レーザーテック株式会社 検査装置、及び検査方法
JP6035279B2 (ja) * 2014-05-08 2016-11-30 東京エレクトロン株式会社 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体
JP6244329B2 (ja) * 2015-05-12 2017-12-06 東京エレクトロン株式会社 基板の検査方法、基板処理システム及びコンピュータ記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001027990A1 (en) 1999-10-13 2001-04-19 Koninklijke Philips Electronics N.V. A method and system for polishing semiconductor wafers
US20150228521A1 (en) 2010-12-20 2015-08-13 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers
US20160148850A1 (en) 2014-11-25 2016-05-26 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes

Also Published As

Publication number Publication date
CN109655005B (zh) 2021-02-26
TW201930817A (zh) 2019-08-01
TWI692614B (zh) 2020-05-01
JP2019070619A (ja) 2019-05-09
KR20190040907A (ko) 2019-04-19
JP6884082B2 (ja) 2021-06-09
CN109655005A (zh) 2019-04-19

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