WO2012132166A1 - 基板検査装置および基板検査方法 - Google Patents
基板検査装置および基板検査方法 Download PDFInfo
- Publication number
- WO2012132166A1 WO2012132166A1 PCT/JP2012/000055 JP2012000055W WO2012132166A1 WO 2012132166 A1 WO2012132166 A1 WO 2012132166A1 JP 2012000055 W JP2012000055 W JP 2012000055W WO 2012132166 A1 WO2012132166 A1 WO 2012132166A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- edge
- line
- image
- scanning direction
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8427—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a substrate inspection apparatus and inspection method.
- the present invention relates to a technical field of inspecting a coating film on a substrate based on a captured image.
- a transparent film on the surface for example, a semiconductor element
- a resist for example, a photoresist is applied and this photoresist film is selected.
- the one-conductivity type semiconductor layer, electrode, and lead having a desired shape are formed by etching.
- mask alignment is performed each time.
- the state of the resist surface such as a change in film thickness, foreign matter, scratches, etc., can cause defects in the semiconductor, so that it is desired to find them early.
- an inspection method for inspecting the complete position of photoresist removal and a predetermined position of a boundary line between a region having a photoresist and a region having no photoresist that is, a so-called edge bead removal line (EBR line) is provided (Japanese Patent Laid-Open No. 2006). -352113).
- EBR line edge bead removal line
- a substrate inspection apparatus an apparatus provided with a CCD camera over the entire substrate surface is provided (Japanese Patent Laid-Open No. 2009-10349). Then, the data is plotted in polar coordinates, and a reject substrate having a risk of increasing contamination due to the overlapping of the lines corresponding to the BARC layer, the top coat layer, and the resist layer at the edge portion of the substrate is selected.
- Japanese Patent Laid-Open No. 2009-10349 only mentions that a substrate having an overlapping edge portion in each layer is a reject substrate. For this reason, reference is made to fitting a curve to data in order to perform automatic analysis in addition to visual determination in a substrate test, but it is unclear how the analysis is automatically performed other than the overlapping of the edge portions. Therefore, there was room for improvement in terms of efficiency.
- an edge feature measurement system that detects the relative distance from the edge of the wafer to the edge of the resist layer via an imaging system is provided (Japanese Patent Publication No. 2009-544157).
- a pixel array having a plurality of first dimensions X and second dimensions Y around a wafer edge region is acquired and an edge map is created from each pixel array. Layer intersections are evaluated, measured, or otherwise characterized from images encompassing the periphery of the wafer.
- an edge image can be formed and evaluated by dividing into small regions, but the entire image is created for the evaluation of the entire edge, and processing takes time. It was.
- the evaluation of the EBR line means the occurrence of misalignment between the wafer center and the resist layer, which is caused in many manufacturing processes due to many causes in various processes or processes. Therefore, it is preferable that evaluation is performed in many processes, and since evaluation is performed during processing, more efficient inspection is desired.
- the present invention provides a substrate inspection apparatus according to a first aspect of the present invention, comprising: a rotating means that holds and rotates a substrate on which a coating film is formed; A light irradiating means for irradiating and receiving specularly reflected light from the surface of the substrate, and having at least a radius of the substrate in a main scanning direction parallel to the radial direction of the substrate from the rotation center of the substrate; A two-dimensional image is generated by arranging a photoelectric conversion means for picking up an image of a line and an image picked up by the photoelectric conversion means during one rotation of the substrate in a sub-scanning direction orthogonal to the main scanning direction, Image processing means for determining the quality of the edge line of the coating film using a determination band set in parallel to the sub-scanning direction with respect to the three-dimensional image.
- the substrate inspection method according to claim 8 of the present invention irradiates the surface of the substrate with light while rotating the substrate on which the coating film is formed, and receives regular reflection light from the surface of the substrate.
- an imaging step of taking an image of a scanning line having a length of the radius of the substrate in a main scanning direction parallel to the radial direction of the substrate from at least the rotation center of the substrate, and during the rotation of the substrate
- An image generation step of generating a two-dimensional image by arranging a plurality of images obtained by repeating the imaging step in a sub-scanning direction orthogonal to the main scanning direction, and parallel to the sub-scanning direction with respect to the two-dimensional image
- a determination step of determining whether the edge line of the coating film is good or bad using a determination band set in (1).
- the image processing unit divides an image included in the determination band in the two-dimensional image into a plurality of block images in the sub-scanning direction.
- An edge detection unit that detects whether or not the block image includes an edge of the coating film, and whether or not the edge line of the coating film is good or bad based on the number of block images from which the edge detection unit has detected an edge And a determination unit.
- the edge detection unit is configured to partition adjacent block images so as to partially overlap in the sub-scanning direction.
- the image processing unit specifies an edge line in the two-dimensional image, and obtains a change point from the presence or absence of the edge line within the width of the determination band. When there is no edge line, an edge defect is determined.
- the scanning line picked up by the photoelectric conversion means has a radius of the substrate in the main scanning direction from the rotation center. One length is added to each other.
- the scanning line picked up by the photoelectric conversion means has a second length on the side opposite to the main scanning direction from the rotation center. It is intended to extend as much as possible.
- the some coating film is laminated
- the substrate has a length of the radius of the substrate in a main scanning direction parallel to the radial direction of the substrate from the rotation center of the substrate.
- the operation of capturing the image of the scanning line and obtaining the line image is performed while the substrate is rotated once to obtain a plurality of line images.
- these line images are arranged in a sub-scanning direction orthogonal to the main scanning direction to generate a two-dimensional image, and the edge of the coating film is determined using a determination band set parallel to the sub-scanning direction with respect to the two-dimensional image.
- Judge the quality of the line Therefore, it is possible to easily determine the evaluation of the coating film from an image obtained by imaging the substrate, and it is possible to perform inspection detection with high processing efficiency.
- the image included in the determination band in the two-dimensional image is divided into a plurality of block images in the sub-scanning direction, and each block image defines the edge of the coating film. Whether or not it is included is determined, and the quality of the edge line of the coating film is determined based on the number of block images in which the edge is detected. Therefore, the edge of the coating film in each part of the substrate can be detected by a simple detection process, and an edge defect can be determined.
- the block images adjacent to each other are divided so as to partially overlap in the sub-scanning direction, so that the edge of the coating film can be detected with high accuracy. And edge defects can be determined more accurately.
- the image processing unit specifies an edge line in the two-dimensional image, and obtains a change point from the presence / absence of the edge line within the width of the determination band. If there is no edge line, it is determined that the edge is defective. Therefore, the evaluation based on the change point can be performed by simple comparison, and the edge defect can be determined.
- the scanning line has a length obtained by adding the radius of the substrate and the first length in the main scanning direction from the center of rotation, that is, the first length. Therefore, the scanning line becomes longer and functions as a margin when the substrate is displaced. As a result, it is possible to determine an edge defect even when the substrate is displaced.
- the scanning line imaged by the photoelectric conversion means extends from the rotation center to the opposite side to the main scanning direction by the second length.
- the scan line is lengthened by two lengths, and the extension of the scan line functions as a margin when the substrate is displaced as in the case where the scan line is extended by the first length as described above. As a result, it is possible to determine an edge defect even when the substrate is displaced.
- the determination band corresponding to each coating film laminated on the surface of the substrate is set, and the quality of the edge line of each coating film is determined for each coating film. Judgment is made using a decision band corresponding to. Therefore, even when a plurality of coating films are laminated on the surface of the substrate, the edge defect of each coating film can be accurately determined.
- FIG. 1 It is a front view which shows 1st Embodiment of the coating-film formation nonuniformity inspection apparatus of this invention. It is a top view of the coating-film formation nonuniformity inspection apparatus shown in FIG. It is principal part sectional drawing of a light irradiation means. It is a schematic explanatory drawing explaining the optical path in a coating-film formation nonuniformity inspection apparatus. It is a plane explanatory view showing the surface state of substrate W after EBR processing of a resist film. It is explanatory drawing which shows the digital signal of the image of the board
- FIGS. 1 to 5 a first embodiment of the present invention will be described with reference to FIGS. 1 to 5.
- FIG. 1 is a front view of the inspection apparatus
- FIG. 2 is a plan view of the inspection apparatus.
- the object to be coated of the present invention is a circular semiconductor wafer, and a resist film that is a photosensitive material formed on the surface of the semiconductor wafer in each process of manufacturing semiconductor elements as a film having a transparent surface.
- an embodiment applied to an inspection apparatus for an edge resist film on the surface of a semiconductor wafer for measuring a change in EBR line on the surface of the photoresist after coating will be described with reference to the drawings.
- an anti-reflective material made of, for example, polyimide resin applied under the resist film, and protecting the resist surface, for example, measuring the deviation of the edge of the top coat by an alkali-soluble polymer and an alcohol solvent. Also good.
- a substrate inspection apparatus 100 includes a detection unit 1 in which a rotary table 5, a light irradiation means 2 including a light source 21, an optical system 3, and a photoelectric conversion means 4 are housed.
- W is a substrate such as a semiconductor wafer (hereinafter referred to as a substrate W) which is an object to be coated
- 5 is a rotating table as a rotating means for the substrate W
- the substrate W is a rotating table 5 for inspecting the entire surface.
- the substrate W is held and rotated by adsorbing the substrate W on the upper surface of the circular table by a suction means constituted by a vacuum suction hole (not shown). Then, the substrate W is rotated one or more times by the rotary table 5 for the entire surface inspection.
- the light irradiation means 2 is arranged above the substrate W held on the rotary table 5 in the vertical direction.
- a light source 21 by a light guide tube made of a quartz rod is inserted into an aluminum cylindrical support portion 23, one end of the cylindrical support portion 23 is fixed to the side wall 101 of the detection unit 1, and the other end is a connecting portion 24. And is fixed to the other side wall 102 via the connecting pipe 25.
- FIG. 3 is a cross-sectional view of the main part of the light irradiation means 2.
- a reflector 22 is attached to a part of the peripheral surface of the light source 21. Most of the light reflected by the reflecting material 22 is emitted from the opposite surface side of the reflecting material 22.
- a slit 28 is formed in the cylindrical support portion 23 on the opposite surface side of the reflector 22. Therefore, the light emitted from the light source 21 is blocked by the cylindrical support portion 23 and irradiated from the slit 28 toward the substrate W.
- the light source 21 is connected to one end of the optical fiber 26 at the connecting portion 24, and the optical fiber 26 extends from the side wall 102 to the outside of the detection unit 1 through the inside of the connecting pipe 25.
- the other end of the optical fiber 26 is opposed to the LED 27 arranged outside the detection unit 1.
- the LED 27 when the LED 27 is turned on, the light is introduced into the light source 21 via the optical fiber 26.
- the light introduced into the light source 21 is emitted from the periphery of the quartz rod and irradiated from the slit 28.
- a line sensor camera is arranged as the photoelectric conversion means 4 above the substrate W in the vertical direction.
- a line sensor camera a well-known line sensor device such as a CCD or MOS, an amplifier, a drive circuit, an A / D converter, a memory, an input / output circuit, an imaging lens (imaging lens), a housing, etc.
- a line sensor camera can be used.
- the incident light to the photoelectric conversion means 4 is specularly reflected light from the surface of the resist film by light irradiated from the light irradiation means 2 which is a radial line including the rotation center A0 of the substrate W. That is, part of the light from the light source 21 enters the surface of the resist film.
- the incident angle ⁇ 1 at this time is preferably 20 degrees to 40 degrees with respect to the resist film surface, and preferably 30 degrees.
- the optical system 3 is arranged so that the regular reflection optical path of the regular reflection light corresponding to the approximate radius of the substrate W due to this incidence is incident on the lens of the photoelectric conversion means 4.
- the substrate size for the incident angle ⁇ 1 it is desirable to set the angle as described above. It is desirable to set the angle to about 45 ° in the generation 450 mm semiconductor wafer.
- the optical system 3 includes a rectangular and planar mirror 31 and a holding plate 32 that holds the mirror 31.
- the holding plate 32 is mounted on the side wall 103 of the detection unit 1 via the support member 33, and is fixed after adjusting the angle of the mirror 31 so as to guide the specularly reflected light having the reflection angle ⁇ 2 from the substrate W to the photoelectric conversion means 4 directly above. Is done.
- FIG. 4 is a schematic explanatory diagram for explaining an optical path from the light irradiation means 2 to the photoelectric conversion means 4 in the substrate inspection apparatus 100.
- the photoelectric conversion means 4 is drawn while being shifted so that the specular reflection optical path can be seen, but the photoelectric conversion means 4 is arranged substantially vertically above the optical system 3 as shown in FIG.
- the specularly reflected light from the substrate W is received by the photoelectric conversion means 4 via an internal light receiving lens and converted into an electric signal.
- this electrical signal is processed by the image processing apparatus 6 which is an image processing unit as a signal processing means, and the surface state of the substrate W is detected by the control unit 10.
- the mirror 31 connects the reduced image of the imaging region L, which is a scanning line on the substrate W, to the light receiving portion of the photoelectric conversion unit 4 so that the specularly reflected light having the reflection angle ⁇ 2 from the substrate W is guided to the photoelectric conversion unit 4 directly above.
- the angle and the distance from the photoelectric conversion means 4 are adjusted and set so as to be imaged.
- the turntable 5 is provided on the drive mechanism base and is sucked so as to be in close contact with the table surface when the substrate W is placed on the turntable 5.
- a motor 9 is arranged in the drive mechanism base, and a speed conversion gear for converting rotation from the motor 9 into a predetermined speed is provided.
- the motor 9 is controlled by a control unit 10 described later.
- the substrate W in the middle of the semiconductor manufacturing process on which the resist film is provided on the surface is placed on the turntable 5 with the resist film facing upward.
- This mounting means sucks the back surface where the resist film is not provided by a robot drive or the like for each inspection of the semiconductor manufacturing process, transfers it through the opening 104 of the side wall 103, and sucks it again by the transfer robot after the inspection. Create a system line to transfer to the next process.
- a workpiece transfer robot and a cassette are provided as a loader / unloader for the substrate W (not shown).
- the workpiece transfer robot extracts the substrate W from the cassette and sets it on the rotary table 5, and stores the substrate W in the cassette from the rotary table 5 after the inspection is completed.
- OK and NG cassettes may be prepared and the substrates W may be distributed according to the inspection result.
- the 7 is a power supply device that supplies power to each component in the detection unit 1, and 10 is a control unit that processes the electrical signal together with the image processing device 6 to make a pass / fail judgment or the like.
- the output signal of the photoelectric conversion means 4 is amplified and input to the image processing device 6, and signal processing is performed by the image processing device 6, so that the change information of the edge of the substrate W is shaped into an electric waveform to the control unit 10. input.
- This image processing device 6 has a built-in determination function, and the evaluation unit 61 determines whether there is a change in the coating film formation or whether it is good or bad by computing the output signal of the image processing device 6 using a computer or the like.
- the determination result is returned to the image processing device 6 and displayed on a display unit (not shown) such as a television monitor.
- the control unit 10 drives the rotary table 5 via the motor 9.
- FIG. 5 is an explanatory plan view showing the surface state of the substrate W after the EBR treatment of the resist film
- FIG. 6 shows a digital signal of an image of the substrate W.
- the inner part and the outer part where the oblique line of the boundary indicated by the curve L ⁇ b> 10 in the substrate W is drawn are different parts with or without the resist layer. That is, the curve L10 is an EBR line, and the outer portion of the curve L10 represents a state where the resist layer is removed and the surface of the substrate W is exposed.
- an imaging region L indicated by a dotted line is an exposure region by the light source 21 and is an imaging region by the photoelectric conversion means 4.
- the regular reflection light of the imaging region L by the photoelectric conversion means 4 is converted into a digital signal by a photoelectric converter (A / D converter) and output.
- the scanning line length is set to be 2 mm longer as the region L1 outside the radius of the substrate W and the substrate W, and the rotation center A0 side of the substrate W is set as 2 mm longer as the region L2. By doing so, a margin is obtained when the substrate W is displaced.
- the line width of the imaging region L one line is imaged every 360 ⁇ sec with a resolution of 30 ⁇ m per pixel. Therefore, about 10,000 lines are imaged and output while the substrate W rotates 360 degrees, that is, one rotation is performed in 3.6 seconds.
- the scanning line is a line extending in the main scanning direction X parallel to the radial direction of the substrate W, and from the rotation center A0 of the substrate W to the main scanning direction X (right hand side in FIG. 6). It has a length obtained by adding the radius of the substrate W and the length of the region L1, and has the length of the region L2 on the opposite side of the main scanning direction X from the rotation center A0 (left hand side in FIG. 6).
- FIG. 6 shows a two-dimensional shape in which lines taken while the substrate W is rotated 360 degrees, that is, one rotation is arranged.
- This digital signal is stored in a memory as a two-dimensional image.
- the image processing apparatus 6 makes a later-described determination by the evaluation unit 61 based on the data of FIG. That is, in the first embodiment, as described above, a two-dimensional image is generated by arranging the images of the scanning lines imaged every 360 ⁇ sec in the sub-scanning direction Y orthogonal to the main scanning direction X.
- FIG. 7 is an explanatory diagram showing a determination band for the two-dimensional image of the substrate W obtained by the photoelectric conversion means 4.
- a two-dimensional image as shown in FIG. 6 is obtained. It is done.
- the light amount of the electrical signal corresponding to the imaging light amount detected in the imaging region L varies due to the interference of the thin film.
- the image processing device 6 converts this imaging light amount into an imaging electric signal corresponding to the imaging light amount with 256 gradations of 8 bits for each pixel and digitizes it.
- the relationship is set so that the gradation becomes higher as the amount of light increases.
- the image processing device 6 extracts a change point having a large luminance change from the digitized imaging electric signal of the image obtained in one round of the substrate W. That is, the brightness varies depending on the presence or absence of the resist film at the edge of the substrate W. In other words, since the change in luminance differs greatly at the position of the EBR line, this boundary is extracted to generate the edge line L12. By extracting the EBR line over the entire circumference of the substrate W, the edge line L12 is obtained as shown in FIG.
- the following processing is performed by the image processing device 6 in order to emphasize the edge line L12.
- the two-dimensional image is divided into three blocks B1, B2, and B3 as indicated by two dotted lines.
- the digital value of the imaging electric signal of the scanning line is integrated for each pixel for each block.
- the difference between the high luminance portion and the low luminance portion is emphasized, but there is a case where data near the intermediate value is sometimes seen due to luminance noise. That is, the luminance is high on the edge side of the substrate W without the resist film, but when there is a resist film residue, a portion with low luminance is generated.
- the integrated value for each pixel the integrated value approximates each of the part of the resist film and the part without the resist film. However, if there is a part with high brightness and low brightness, Since it is considered as a residue, such an integrated value is deleted and made the same as the integrated value of the part with high luminance.
- the determination band L11 is input to the evaluation unit 61 from the input unit (not shown) by the operator in advance. This is input as a distance from the edge of the substrate W to the substrate W rotation center A0 side where the EBR line should originally be. Then, an allowable deviation amount of the EBR line is set as a distance around the position where the EBR line should originally be. A line in which an equal width is set around the position where the EBR line should originally exist is set in the evaluation unit 61 as the determination band L11.
- ⁇ Evaluation part 61 will superimpose judgment band L11, if an EBR line is extracted on a two-dimensional image. As a result of this superposition, a part where the EBR line is not located in the determination band L11 on the two-dimensional image is determined as a change point. Specifically, the case where there is no edge line L12 between the determination bands L11 for each scanning line is detected as a change point. The evaluation unit 61 detects and outputs this change point, so that the image processing unit 6 performs quality determination or the like. As a result of the pass / fail judgment by the image processing unit 6, a display unit (not shown) displays that the EBR line is not in a predetermined position via the control unit 10. Therefore, part of the image processing unit 6 and the control unit 10 corresponds to the image processing unit of the present invention.
- FIG. 8 is a flowchart showing the processing operation.
- the substrate W is placed on the turntable 5 (step S101)
- exposure of the surface of the substrate W is started by the light irradiation means 2 (step S102).
- the coating film If there is a coating film on the substrate W, light from the light source 21 is scattered or interfered by the coating film, and a part of the regular reflection light is not incident on the photoelectric conversion means 4 and is imaged. If the coating film is not present, the specular reflection of the illumination light totally reflected on the substrate W enters the photoelectric conversion means 4.
- the present embodiment will be described as a case where regular reflection is performed from a normal coating film.
- a thin film of resist is formed on the surface of the substrate W, and when the specular reflection light image is viewed, the color appears to be different depending on the difference in thickness of the resist, or the part with and without the coating film.
- the resist material is a photosensitive material and is exposed to ultraviolet rays, the light from the LED 27 is cut off by a filter or the like.
- the color of the portion where the surface of the substrate W is exposed at the edge of the substrate W and the portion where the resist film is present are greatly different.
- the amount of specularly reflected light can be detected by imaging with the photoelectric conversion means 4.
- the change in the resist film thickness on the substrate W can be imaged by the photoelectric conversion means 4.
- the position of the EBR line is also imaged.
- the rotary table 5 is rotated while exposing the substrate W, and the imaging of the imaging region L is continued during one rotation of the substrate W (step S103). Then, a captured image for each pixel forming one line of the scanning lines obtained for one round of the substrate W is obtained as shown in FIG.
- the corrected electrical electrical signal may be obtained by subtracting the irradiation electrical signal measured in the imaging area L of the light source 3 from the imaging light quantity for each scanning line from the electrical imaging signal detected in the imaging area L. .
- the irradiation electric signal measured in the imaging region L of the light source 21 measured in advance and similarly digitized according to the amount of irradiation light with 256 gradations is subtracted from the imaging electric signal for each scanning line to obtain a corrected imaging electric signal. . Thereby, it is possible to eliminate the influence when the LED 27 has unevenness in the amount of light.
- the rotation table 5 is rotated by outputting a rotation program to the motor 9.
- the rotation program is, for example, an operation program in which the rotation is stopped after a number of rotations and then the rotation is stopped after a number of rotations. These are stored in advance in the memory of the control unit 10.
- the photoelectric conversion means 4 is connected to the image processing apparatus 6 and the control unit 10 that performs overall control, and can automatically know the state of the EBR line on the substrate W. That is, after the output signal of the photoelectric conversion means 4 is amplified and shaped, it is digitized and stored in the memory by the image processing device 6. Information stored in the memory is read by a predetermined means, and predetermined signal processing is performed by the image processing device 6 in order to determine the presence or absence of a change point of the EBR line.
- the edge line L12 is emphasized by being separated into blocks B1, B2, and B3 as shown in FIG. 7 (step S104).
- the gradation value of the pixel is integrated at the same pixel position for each line, and the integrated value that is significantly different from both the integrated value of the portion having the resist film and the integrated value of the portion having no resist film is deleted. Since such an intermediate integrated value is highly likely to occur in a region without the resist film, the gradation value of the pixel is made equal to that in the region without the resist film. In other words, the presence of the resist film in a part where there is no resist film results in a lower level than the part where there is no luminance.
- the determination is not made as the edge line L12, but the gradation value is made the same as that of the portion without the resist film, thereby preventing erroneous determination in the extraction of the edge line L12.
- the integrated value for each of the blocks B1, B2, and B3 is developed into a two-dimensional image to reconstruct the two-dimensional image shown in FIG.
- the difference between the EBR line and the imaged electrical signal is not less than a preset range of brightness over the entire circumference at a position away from the substrate W rotation center A0.
- the reflected light amount is small and a weak light amount is obtained.
- On the outside of the edge line L12 a large reflected light amount and a strong light amount are obtained.
- the boundary is extracted by comparing with a preset gradation difference, and the edge line L12 is specified.
- the edge line L12 is expressed as a boundary for the sake of convenience, but in practice, the line is recognized only by meaning the boundary between the left and right regions of the edge line L12 shown in FIG. 7 on the two-dimensional image. I'm not doing it.
- the electric signal output from the photoelectric conversion means 4 is in a line shape, and signal processing such as calculation in the image processing device 6 is facilitated.
- FIG. 9 is an explanatory diagram illustrating determination of a change point.
- the edge line L12 when the edge L12 line changes greatly, the edge line L12 shows a part exceeding the width of the determination band L11 indicated by the dotted line. This part is determined as the changing point L13 of the edge line L12.
- the evaluation unit 61 determines that there is no edge line L12 within the width of the determination band L11 for each scanning line. In other words, it is determined that the boundary between the region with the resist film and the region without the resist film is not within the width of the determination band L11.
- the control unit 10 Since the width of the determination band L11 indicates the coating position of the desired resist film, if it is extracted from this determination result that the edge line L12 does not exist within the width of the determination band L11, the control unit 10 detects an edge failure. Is output to the display unit.
- the edge region on the substrate W is evaluated by detecting the change point L13. That is, if a large number of change points L13 are detected, the resist film is not applied to a desired region position with respect to the substrate W. In this case, change points are extracted all around the substrate W.
- the determination band L11 is set in the evaluation unit 61 by the following process.
- the substrate W on which a plurality of resists are applied in advance is experimentally measured.
- a level for determining the boundary between the application region and the edge region is obtained and set on the signal.
- the edge defect is easily detected by comparing this with the convex change point L13 of the EBR line of the inspection target substrate W in the actual inspection process.
- most of the edge line L12 is located within the width of the determination band L11. Therefore, setting so as to determine a case where the edge line L12 is not within the width of the determination band L11 has an effect of simplifying the processing.
- the change point L13 can be detected in the entire periphery of the substrate W, so that the inspection can be performed efficiently. Further, when determining an edge defect, it is not necessary to determine the position of each edge line L12, and it is only necessary to detect a case where the edge line L12 is not within the width of the determination band L11.
- the control unit 10 determines that the change point L13 exists when the edge line L12 is not within the width by the determination of the presence or absence of the edge line L12 with respect to the determination band L11 as shown in FIG. Then, when there is no edge line L12 within the width of the determination band L11, it is determined that there is an edge defect.
- the EBR line showing a relatively wide range of changes can be reliably detected with a simple configuration.
- the determination of the change point L13 is processed by the evaluation unit 61.
- the control unit 10 may be configured to process the determination.
- the inspection result may be displayed on a television monitor provided in the substrate inspection apparatus 100.
- the substrate W is unloaded from the turntable 5 as the end of the inspection process (step S106).
- the direction of the substrate W is the same as that at the time of loading, so there is no need to adjust the position of the turntable 5 again. That is, since the inspection is performed by capturing a two-dimensional image of the substrate W during one rotation of the substrate W in the inspection process, the inspection process is completed in the same direction when the substrate W is loaded. Therefore, there is an advantage that the orientation of the substrate W on the turntable 5 at the time of unloading is not required to be adjusted again to be unloaded by the transport means.
- a two-dimensional image of the substrate W is created, and when there is no edge line L12 within the width of the determination band L11, it is determined that there is an edge defect.
- the substrate inspection apparatus 100 it is possible to reliably detect an edge defect with a simple configuration by determining an EBR line showing a relatively wide range of changes.
- the edge line L12 detects the boundary between the left and right regions of the edge line L12 shown in FIG. 7 on the two-dimensional image.
- the boundary may be recognized as a line. That is, the two-dimensional image may be re-developed into a two-dimensional image after enhancement processing, and then the boundary position corresponding to the edge line L12 may be recognized and determined as a line.
- the captured two-dimensional image includes not only the gradation value of the image depending on the presence or absence of the resist film, but also the lower layer pattern.
- the gradation value varies particularly in the portion where the resist film is present, and depending on the setting of the preset gradation difference for extracting the EBR line as representing a difference of the luminance exceeding the predetermined range. It can lead to false positives. Therefore, when the enhancement process is performed on such a two-dimensional image, the integrated value appears as a strong peak at the portion corresponding to the edge line L12. As a result, it is possible to more reliably prevent misjudgment in the extraction of the edge line L12.
- the number of blocks to be emphasized is three.
- the number of blocks is not limited to this, and an appropriate number may be set. In this case, if the number is increased, the effect of the enhancement processing is diminished, and if the number is small, the processing takes time. Therefore, the setting may be made in consideration of the processing efficiency.
- the emphasis process is executed in the above embodiment, the execution of the emphasis process is not necessarily required.
- the influence of the residue of the resist film on the integration result may be slight.
- the integrated value of the pixel corresponding to the residue is almost the same as the integrated value of the portion with high luminance (that is, the portion without residue)
- the determination process may be executed immediately without performing the enhancement process (step S104).
- FIG. 10 is a flowchart showing the operation of the second embodiment of the coating film formation unevenness inspection apparatus.
- FIG. 11 is a flowchart showing an edge detection operation in the second embodiment.
- this second embodiment is common to the first embodiment in that an edge defect is determined by using a determination band for the two-dimensional image acquired by the apparatus shown in FIG. 1, the enhancement processing of the first embodiment
- Edge defects are determined by a substrate inspection method different from (Step S104) and determination processing (Step S105). That is, processing excluding enhancement processing (step S104) and determination processing (step S105), that is, substrate carry-in processing (step S101), exposure start processing (step S102), imaging processing (step S103), and substrate carry-out processing (step S106). Is basically the same as that of the first embodiment, but edge detection and edge defect determination based on it are greatly different from those of the first embodiment.
- the substrate inspection method according to the second embodiment will be described focusing on the differences.
- the image processing device 6 receives data indicating the relationship between the EBR line and the determination band and stores it in a memory not shown (step S201). .
- the image processing apparatus 6 that has received the above data, for example, as shown in FIG. 12A, uses a determination band for detecting each EBR line formed on the surface of the substrate W by each process 1, 2,.
- the allowable width of L11 is stored in the memory in a table format.
- “inner diameter xna” means the distance from the rotation center A0 to the rotation center side end of the determination band L11
- “outer diameter xnb” means the counter rotation center of the determination band L11 from the rotation center A0.
- the distance to the side end is meant, and the inner diameter and the outer diameter define the determination band L11 and the allowable width of the determination band L11.
- the allowable widths (xn1a to xn1b) and (xn2a to xn2b),..., (xnma to xnmb) are set. Therefore, when the edge position EP of the EBR line obtained as described later is located within the allowable width of the determination band L11, it means that the edge detection has succeeded (FIG. 12C), and conversely, the allowable width becomes the allowable width. The fact that it is not located means that edge detection has failed.
- the reason why the permissible widths (xna to xnb) are individually set for the processings 1, 2,..., N and the ERB lines is formed on the surface of the substrate W according to the processing contents. This is because the number of films, film types, film shapes, film sizes, and the like are different.
- the image processing apparatus 6 obtains a two-dimensional image SI showing the entire surface of the substrate W by acquiring 10500 images of the scanned scanning lines and arranging them in the sub-scanning direction Y orthogonal to the main scanning direction X ( FIG. 12 (b)).
- the image processing apparatus 6 extracts a two-dimensional image EI (FIG. 13A) showing the entire circumference of the peripheral edge of the substrate W from the two-dimensional image SI of the entire substrate surface, and the image EI Data is temporarily stored in the memory (step S202).
- the image processing device 6 executes the following processing based on the image data of the image EI (steps S203 to S211).
- step S203 the EBR number m corresponding to the process performed on the substrate W held on the turntable 5 is read from the data received in step S201 and set.
- the inspection count value K is set to the initial value “1” (step S204).
- the inspection count value K is a value indicating how many EBR lines are being inspected, and the inspection count value K identifies the EBR line to be inspected.
- the allowable width (xna to xnb) of the determination line L11 corresponding to the EBR line of the inspection count value K, that is, the K-th EBR line is read from the table in the memory (FIG. 12A) and set. To do. Then, edge detection processing is executed using the determination line L11, and the edge of the Kth EBR line is detected from the image data (step S206).
- the outline operation of this edge detection processing is as follows. That is, as shown in FIG. 13, a block image BI of 500 lines within the allowable width (Xna to Xnb) of the determination band L11 and in the sub-scanning direction Y is extracted, and the block image data BD of the block image BI is extracted. Based on this, it is determined whether or not the edge of the EBR line is included in the block image BI. In this embodiment, edge detection is performed on a total of 41 block images BI while shifting the block image BI by 250 lines in the sub-scanning direction Y. Next, details of the edge detection processing will be described with reference to FIGS.
- the image processing apparatus 6 executes edge detection processing according to the operation flow shown in FIG.
- the first line of the block image BI is set to the “0” th line, which is the initial value of the line acquisition start position (step S206a). Then, the image data within the allowable width (Xna to Xnb) of the determination band L11 set in step S205 is acquired from the image data of the two-dimensional image EI around the entire substrate edge for 500 lines from the line acquisition start position, and the block An image BI is extracted (step S206b). Then, a gradation difference ⁇ D between image data of pixels adjacent to each other in the main scanning direction X among the pixels constituting the block image BI is calculated, and the gradation difference data DD including these is stored in the memory (step S206c). .
- p is a natural number greater than or equal to 0 and less than or equal to (Xnb ⁇ Xna ⁇ 1), Is required.
- the gradation difference ⁇ D at each position (Xna to Xnb) in the main scanning direction X is integrated in the sub-scanning direction Y (step S206d).
- the gradation difference ⁇ D at the edge position EP is relatively large, whereas the gradation difference ⁇ D is zero or close to zero at the non-edge position. Indicates the value.
- the gradation difference ⁇ D at each position (Xna to Xnb) is integrated, the influence of noise and the like can be suppressed. For example, as shown in FIG. 13 (d), the integrated value at the edge position is It is significantly higher than the non-edge position.
- Step S206e whether or not there is an integrated value peak exceeding 2 ⁇ ( ⁇ : standard deviation) from the average value of the integrated values among the integrated values within the allowable width (Xna to Xnb) of the determination band L11.
- Step S206e for example, when the peak exists at the position (Xna + p) as shown in FIG. 13D (in the case of “YES” in step S206e), it is determined that the edge detection is successful.
- Step S206f On the other hand, when the integrated value peak cannot be confirmed (in the case of “NO” in step S206e), it is determined that the edge detection has failed (step S206g).
- step S206h when the determination of whether or not the edge of the EBR line is included in the block image BI is completed, the determination of the presence / absence of the edge is not completed for all 41 block images (during “NO” in step S206h).
- step S206i After the line acquisition start position is advanced 250 lines in the sub-scanning direction Y (step S206i), the process returns to step S206b and the above-described series of processing (steps S206b to S206h) is executed for the next block image BI.
- step S207 When the determination of the presence / absence of edges is completed for all 41 block images, a total of 41 determination results are obtained, so the edge detection process is closed and the process proceeds to step S207.
- step S207 it is determined whether or not the number of edge detections among the 41 determination results is a preset threshold, for example, 3/4 or more of all 41, and if it is equal to or more than the threshold, It is determined that the edge line is within the determination band L11 and the edge is good (step S208). On the other hand, when it is less than the threshold value, it is determined that the edge line is not in the determination band L11 and the edge is defective (step S209).
- the determination criterion is not limited to the above-described criterion (the number of blocks whose edges are detected is 3/4 or more), and may be obtained experimentally, for example.
- step S210 it is determined whether or not the inspection count value K matches the number of EBR lines m (step S210). If they do not match, the inspection count value K is set to “1”. Then, the process returns to step S205 to determine the edge quality for the next EBR. On the other hand, when it is determined “YES” in step S210 and it is confirmed that the edge pass / fail determination has been completed for all the EBR lines, the series of processes is ended.
- the evaluation of the coating film can be easily determined from the two-dimensional image obtained by imaging the substrate W, and the processing efficiency is high. Inspection detection becomes possible. Moreover, in 2nd Embodiment, the quality test of an EBR line can be performed without calculating
- the block image BI segmentation mode (number of block lines in the sub-scanning direction Y, number of block shift units) is arbitrary.
- the block image BI for 500 lines is shifted in the sub-scanning direction Y in units of 500 lines.
- the image processing apparatus 6 detects the edge position EP of the EBR line in each block image BI and the number of the block images BI from which the edge is detected based on the number of the block images BI detected. Although it functions as a pass / fail judgment unit for judging pass / fail, a part or all of them may be assigned to the control unit 10. That is, as in the first embodiment, the “image processing unit” of the present invention may be configured by a part of the image processing unit 6 and the control unit 10.
- the allowable band of the determination band L11 corresponding to each EBR line is set in advance and the determination band L11 having the allowable width corresponding to each EBR line is used, a plurality of types of coating films are used.
- the edge quality of each coating film can be determined with high accuracy. Note that the technical idea of preparing determination bands corresponding to the respective coating films in advance and using the determination bands corresponding to the EBR lines can be applied to the first embodiment.
- the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention.
- the image processing device 6 and the control unit 10 have different structures, but may be configured as an integrated processing unit so as to have a similar control function.
- substrate was made into object as a to-be-coated object, if it is the object apply
- a rectangular substrate such as a substrate may be used as an object to be coated.
- the substrate inspection apparatus of the present invention can be used for inspection of the state of a substrate coated with a film.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
ステップS203では、回転テーブル5に保持される基板Wに対して施された処理に対応するEBR本数mをステップS201で受信したデータから読み出して設定する。また、検査カウント値Kを初期値「1」に設定する(ステップS204)。この検査カウント値Kは検査中のEBR線が何本目であるかを示す値であり、この検査カウント値Kによって検査対象となっているEBR線が特定される。
次に、エッジ検出処理の詳細について図11~図13を参照しつつ説明する。画像処理装置6は図11に示す動作フローにしたがってエッジ検出処理を実行する。このエッジ検出処理では、まずブロック画像BIの先頭ラインをライン取得開始位置の初期値である「0」番目ラインに設定する(ステップS206a)。そして、基板端全周の二次元画像EIの画像データからステップS205で設定された判定バンドL11の許容幅(Xna~Xnb)内の画像データをライン取得開始位置から500ライン分だけ取得し、ブロック画像BIを抽出する(ステップS206b)。そして、ブロック画像BIを構成する画素のうち主走査方向Xにおいて互いに隣接する画素の画像データ間の階調差ΔDを算出し、これらを含む階調差データDDをメモリに記憶する(ステップS206c)。例えば図13(b)(c)では、隣接する画素(Xna+p、0)、(Xna+p+1、0)の階調差ΔD(Xna+p、0)は、
ΔD(Xna+p、0)=D(Xna+p+1、0)-D(Xna+p、0)
ただし、pは0以上で、かつ(Xnb-Xna-1)以下の自然数、
により求められる。
100 基板検査装置
2 光照射手段
21 光源
3 光学系
4 光電変換手段
5 回転テーブル
6 画像処理装置
61 評価部
10 制御部
A0 (基板の)回転中心
BI ブロック画像
L 撮像領域
L11 判定バンド
L12 エッジ線
W 基板
Claims (8)
- 表面に塗布膜が形成された基板を保持して回転する回転手段と、
前記基板の表面に光を照射する光照射手段と、
前記基板の表面からの正反射光を受光し、少なくとも前記基板の回転中心から前記基板の半径方向と平行な主走査方向に前記基板の半径の長さを有する、走査ラインの画像を撮像する光電変換手段と、
前記基板が一回転する間に前記光電変換手段により撮像される画像を前記主走査方向と直交する副走査方向に並べて二次元画像を生成し、前記二次元画像に対して前記副走査方向と平行に設定された判定バンドを用いて前記塗布膜のエッジ線の良否を判断する画像処理手段と、
を具備することを特徴とする基板検査装置。 - 請求項1に記載の基板検査装置において、
前記画像処理手段は、
前記二次元画像のうち前記判定バンド内に含まれる画像を前記副走査方向に複数のブロック画像に区分し、各ブロック画像が前記塗布膜のエッジを含んでいるか否かを検出するエッジ検出部と、
前記エッジ検出部がエッジを検出したブロック画像の個数に基づいて前記塗布膜のエッジ線の良否を判断する良否判断部と
を有することを特徴とする基板検査装置。 - 請求項2に記載の基板検査装置において、
前記エッジ検出部は、互いに隣接するブロック画像が前記副走査方向で部分的に重複するように区分けすることを特徴とする基板検査装置。 - 請求項1に記載の基板検査装置において、
前記画像処理部は、前記二次元画像中に含まれるエッジ線を特定し、前記判定バンドの幅内において前記エッジ線の有無から変化点を求め、エッジ線が無い場合にエッジ不良と判定することを特徴とする基板検査装置。 - 請求項1ないし4のいずれか一項に記載の基板検査装置において、
前記光電変換手段により撮像される前記走査ラインは、前記回転中心から前記主走査方向に前記基板の半径と第1長さを足し合わした長さを有することを特徴とする基板検査装置。 - 請求項1ないし5のいずれか一項に記載の基板検査装置において、
前記光電変換手段により撮像される前記走査ラインは、前記回転中心から前記主走査方向と反対側に第2長さだけ延びることを特徴とする基板検査装置。 - 前記基板の表面に複数の塗布膜が積層された請求項1ないし6のいずれか一項に記載の基板検査装置において、
各塗布膜に対応して判定バンドが設定され、
前記画像処理手段は、各塗布膜のエッジ線の良否を各塗布膜に対応する判定バンドを用いて判断することを特徴とする基板検査装置。 - 表面に塗布膜が形成された基板を回転させながら前記基板の表面に光を照射するとともに前記基板の表面からの正反射光を受光することで、少なくとも前記基板の回転中心から前記基板の半径方向と平行な主走査方向に前記基板の半径の長さを有する、走査ラインの画像を撮像する撮像工程と、
前記基板が一回転する間に前記撮像工程を繰り返すことで得られる複数の画像を前記主走査方向と直交する副走査方向に並べて二次元画像を生成する画像生成工程と、
前記二次元画像に対して前記副走査方向と平行に設定された判定バンドを用いて前記塗布膜のエッジ線の良否を判断する判断工程と、
を具備することを特徴とする基板検査方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127027708A KR101453638B1 (ko) | 2011-03-30 | 2012-01-06 | 기판검사장치 및 기판검사방법 |
US13/808,939 US9064922B2 (en) | 2011-03-30 | 2012-01-06 | Substrate inspection apparatus and substrate inspection method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011074423 | 2011-03-30 | ||
JP2011-074423 | 2011-03-30 | ||
JP2011215166A JP5769572B2 (ja) | 2011-03-30 | 2011-09-29 | 基板検査装置および基板検査方法 |
JP2011-215166 | 2011-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012132166A1 true WO2012132166A1 (ja) | 2012-10-04 |
Family
ID=46929963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/000055 WO2012132166A1 (ja) | 2011-03-30 | 2012-01-06 | 基板検査装置および基板検査方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9064922B2 (ja) |
JP (1) | JP5769572B2 (ja) |
KR (1) | KR101453638B1 (ja) |
TW (1) | TWI502187B (ja) |
WO (1) | WO2012132166A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6167525B2 (ja) * | 2012-03-21 | 2017-07-26 | 株式会社リコー | 距離計測装置及び車両 |
US9841512B2 (en) * | 2015-05-14 | 2017-12-12 | Kla-Tencor Corporation | System and method for reducing radiation-induced false counts in an inspection system |
JP2017092306A (ja) * | 2015-11-12 | 2017-05-25 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6714477B2 (ja) * | 2016-09-09 | 2020-06-24 | 株式会社アドテックエンジニアリング | 基板角位置特定方法 |
JP6815799B2 (ja) * | 2016-09-13 | 2021-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
TWI831656B (zh) * | 2018-01-04 | 2024-02-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
JP6687656B2 (ja) * | 2018-03-19 | 2020-04-28 | ファナック株式会社 | 検査装置およびその検査方法 |
JP7076280B2 (ja) * | 2018-04-27 | 2022-05-27 | 日立造船株式会社 | 測定方法および測定装置 |
JP7157580B2 (ja) * | 2018-07-19 | 2022-10-20 | 東京エレクトロン株式会社 | 基板検査方法及び基板検査装置 |
US11433617B2 (en) | 2019-01-29 | 2022-09-06 | General Electric Company | Method and apparatus for process monitoring in additive manufacturing utilizing an image of a negative structure |
US11794412B2 (en) | 2019-02-20 | 2023-10-24 | General Electric Company | Method and apparatus for layer thickness control in additive manufacturing |
US11498283B2 (en) | 2019-02-20 | 2022-11-15 | General Electric Company | Method and apparatus for build thickness control in additive manufacturing |
JP7150638B2 (ja) * | 2019-02-27 | 2022-10-11 | キオクシア株式会社 | 半導体欠陥検査装置、及び、半導体欠陥検査方法 |
JP7379104B2 (ja) * | 2019-03-04 | 2023-11-14 | 東京エレクトロン株式会社 | 基板検査装置、基板処理装置、基板検査方法、及びコンピュータ読み取り可能な記録媒体 |
CN111650813B (zh) * | 2019-03-04 | 2024-04-16 | 东京毅力科创株式会社 | 基板处理装置、基板检查装置及方法、以及记录介质 |
US11179891B2 (en) | 2019-03-15 | 2021-11-23 | General Electric Company | Method and apparatus for additive manufacturing with shared components |
US11781238B2 (en) * | 2019-05-20 | 2023-10-10 | Applied Materials, Inc. | Systems and methods for plate-up detection |
JP6952737B2 (ja) * | 2019-05-24 | 2021-10-20 | Towa株式会社 | 保持部材、検査機構、切断装置、保持対象物の製造方法及び保持部材の製造方法 |
WO2020250868A1 (ja) * | 2019-06-10 | 2020-12-17 | 東京エレクトロン株式会社 | 基板処理装置、基板検査方法、及び記憶媒体 |
KR20210026955A (ko) | 2019-09-02 | 2021-03-10 | 삼성전자주식회사 | 반도체 소자 제조 장치, 반도체 소자 검사 장치 및 반도체 소자 제조 방법 |
KR102453258B1 (ko) * | 2020-01-15 | 2022-10-11 | 주식회사 커미조아 | 웨이퍼 모서리 결함 검사장치 및 검사방법 |
JP7082639B2 (ja) * | 2020-04-23 | 2022-06-08 | 倉敷紡績株式会社 | 基板上の液体成分の測定方法および基板処理装置 |
US11951679B2 (en) | 2021-06-16 | 2024-04-09 | General Electric Company | Additive manufacturing system |
US11731367B2 (en) | 2021-06-23 | 2023-08-22 | General Electric Company | Drive system for additive manufacturing |
US11958249B2 (en) | 2021-06-24 | 2024-04-16 | General Electric Company | Reclamation system for additive manufacturing |
US11958250B2 (en) | 2021-06-24 | 2024-04-16 | General Electric Company | Reclamation system for additive manufacturing |
US11826950B2 (en) | 2021-07-09 | 2023-11-28 | General Electric Company | Resin management system for additive manufacturing |
US11813799B2 (en) | 2021-09-01 | 2023-11-14 | General Electric Company | Control systems and methods for additive manufacturing |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006352113A (ja) * | 2005-06-17 | 2006-12-28 | Vistec Semiconductor Systems Gmbh | エッジビード除去においてウェーハを光学的に映し及び検査する方法 |
JP2009010349A (ja) * | 2007-05-22 | 2009-01-15 | Asml Netherlands Bv | 基板を検査する方法およびリソグラフィのために基板を準備する方法 |
JP2009544157A (ja) * | 2006-07-11 | 2009-12-10 | ルドルフテクノロジーズ インコーポレイテッド | 縁部の検査および計測 |
JP2011009626A (ja) * | 2009-06-29 | 2011-01-13 | Olympus Corp | 基板検査方法および基板検査装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7046353B2 (en) * | 2001-12-04 | 2006-05-16 | Kabushiki Kaisha Topcon | Surface inspection system |
KR20060107196A (ko) * | 2005-04-08 | 2006-10-13 | 삼성전자주식회사 | 웨이퍼의 에지 노광 영역 검사 방법 및 이를 수행하기 위한장치 |
JP4331199B2 (ja) * | 2006-11-29 | 2009-09-16 | 東京エレクトロン株式会社 | 液浸露光用塗布膜形成装置および塗布膜形成方法 |
TWI512865B (zh) * | 2008-09-08 | 2015-12-11 | Rudolph Technologies Inc | 晶圓邊緣檢查技術 |
KR101001113B1 (ko) * | 2008-11-12 | 2010-12-14 | 주식회사 코로 | 웨이퍼 결함의 검사장치 및 검사방법 |
JP2010276582A (ja) | 2009-06-01 | 2010-12-09 | Kurabo Ind Ltd | 非接触形状計測装置及び非接触形状計測方法 |
-
2011
- 2011-09-29 JP JP2011215166A patent/JP5769572B2/ja active Active
-
2012
- 2012-01-03 TW TW101100215A patent/TWI502187B/zh active
- 2012-01-06 WO PCT/JP2012/000055 patent/WO2012132166A1/ja active Application Filing
- 2012-01-06 KR KR1020127027708A patent/KR101453638B1/ko active IP Right Grant
- 2012-01-06 US US13/808,939 patent/US9064922B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006352113A (ja) * | 2005-06-17 | 2006-12-28 | Vistec Semiconductor Systems Gmbh | エッジビード除去においてウェーハを光学的に映し及び検査する方法 |
JP2009544157A (ja) * | 2006-07-11 | 2009-12-10 | ルドルフテクノロジーズ インコーポレイテッド | 縁部の検査および計測 |
JP2009010349A (ja) * | 2007-05-22 | 2009-01-15 | Asml Netherlands Bv | 基板を検査する方法およびリソグラフィのために基板を準備する方法 |
JP2011009626A (ja) * | 2009-06-29 | 2011-01-13 | Olympus Corp | 基板検査方法および基板検査装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2012216754A (ja) | 2012-11-08 |
US20130114074A1 (en) | 2013-05-09 |
KR20130019400A (ko) | 2013-02-26 |
US9064922B2 (en) | 2015-06-23 |
TWI502187B (zh) | 2015-10-01 |
KR101453638B1 (ko) | 2014-10-22 |
TW201239344A (en) | 2012-10-01 |
JP5769572B2 (ja) | 2015-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5769572B2 (ja) | 基板検査装置および基板検査方法 | |
JP3669101B2 (ja) | 回折光を使用した基板検査方法および装置 | |
JP4110653B2 (ja) | 表面検査方法及び装置 | |
KR102119339B1 (ko) | 기판 검사 장치, 기판 처리 장치 및 기판 검사 방법 | |
JP3385994B2 (ja) | 像検出装置 | |
JP2005214980A (ja) | ウエハのマクロ検査方法および自動ウエハマクロ検査装置 | |
US8699783B2 (en) | Mask defect inspection method and defect inspection apparatus | |
US8223328B2 (en) | Surface inspecting apparatus and surface inspecting method | |
JP6160255B2 (ja) | 太陽電池セル検査装置および太陽電池セル検査装置の画像位置補正方法 | |
JP5285530B2 (ja) | 塗膜形成ムラ検査装置 | |
JP3657076B2 (ja) | ウエハのマクロ検査方法および自動ウエハマクロ検査装置 | |
CN114424245A (zh) | 一维唯一结构的图案到设计的对准 | |
JP2010190740A (ja) | 基板検査装置、方法およびプログラム | |
JP5476069B2 (ja) | 塗膜形成ムラ検査装置 | |
JP2010216974A (ja) | ムラ検査装置、ムラ検査方法、およびプログラム | |
KR100710703B1 (ko) | 반도체 리드프레임 도금 선폭 측정 검사장치 및 그 방법 | |
US9965851B2 (en) | Method for inspecting pattern and an apparatus for manufacturing a semiconductor device using the same | |
US20240151653A1 (en) | System and method for detecting a defect in a specimen | |
WO2018200871A1 (en) | System and method for photomask alignment and orientation characterization based on notch detection | |
JP2010203892A (ja) | 基板検査方法 | |
KR102702201B1 (ko) | 1차원 고유 구조에 대한 패턴 대 설계 정렬 | |
TWI692614B (zh) | 膜厚測定裝置、基板檢查裝置、膜厚測定方法及基板檢查方法 | |
JP2007285911A (ja) | 表面検査装置 | |
JP2001091473A (ja) | 基板検査装置 | |
TW202338331A (zh) | 雷射退火圖案抑制 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 20127027708 Country of ref document: KR Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12765245 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13808939 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12765245 Country of ref document: EP Kind code of ref document: A1 |