CN109655005B - 膜厚测量装置、基板检查装置、膜厚测量方法以及基板检查方法 - Google Patents

膜厚测量装置、基板检查装置、膜厚测量方法以及基板检查方法 Download PDF

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Publication number
CN109655005B
CN109655005B CN201811184370.XA CN201811184370A CN109655005B CN 109655005 B CN109655005 B CN 109655005B CN 201811184370 A CN201811184370 A CN 201811184370A CN 109655005 B CN109655005 B CN 109655005B
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data
substrate
film
linear
unit
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CN109655005A (zh
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松尾友宏
清水英树
田中淳
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN201811184370.XA 2017-10-11 2018-10-11 膜厚测量装置、基板检查装置、膜厚测量方法以及基板检查方法 Active CN109655005B (zh)

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JP2017197782A JP6884082B2 (ja) 2017-10-11 2017-10-11 膜厚測定装置、基板検査装置、膜厚測定方法および基板検査方法
JP2017-197782 2017-10-11

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CN109655005A CN109655005A (zh) 2019-04-19
CN109655005B true CN109655005B (zh) 2021-02-26

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JP (1) JP6884082B2 (https=)
KR (1) KR102159863B1 (https=)
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TW (1) TWI692614B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210116271A (ko) * 2020-03-17 2021-09-27 도쿄엘렉트론가부시키가이샤 막 두께 측정 시스템 및 막 두께 측정 방법

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JPH05240628A (ja) * 1992-03-02 1993-09-17 Toshiba Corp パターン検査装置
JPH0712524A (ja) * 1993-06-24 1995-01-17 Sony Corp 膜厚測定装置
CN1969059A (zh) * 2005-04-04 2007-05-23 东京毅力科创株式会社 基板处理方法和基板处理装置
CN101128718A (zh) * 2005-02-25 2008-02-20 真实仪器公司 用于薄膜厚度监测的外差式反射计及其实现方法
JP2010034133A (ja) * 2008-07-25 2010-02-12 Just:Kk 多結晶シリコンウエハのクラック検出装置
CN101790690A (zh) * 2007-08-03 2010-07-28 罗森伯格高频技术有限及两合公司 非接触式测量系统
CN102749334A (zh) * 2011-04-19 2012-10-24 芝浦机械电子装置股份有限公司 基板检查装置、基板检查方法及基板检查装置的调整方法
JP2014190797A (ja) * 2013-03-27 2014-10-06 Tokushima Densei Kk シリコンウェハの欠陥検査装置
CN104425308A (zh) * 2013-09-09 2015-03-18 东京毅力科创株式会社 测定装置、基板处理系统和测定方法
JP2015127653A (ja) * 2013-12-27 2015-07-09 レーザーテック株式会社 検査装置、及び検査方法
CN105097587A (zh) * 2014-05-08 2015-11-25 东京毅力科创株式会社 膜厚测定装置和膜厚测定方法
WO2016181930A1 (ja) * 2015-05-12 2016-11-17 東京エレクトロン株式会社 基板の検査方法、基板処理システム及びコンピュータ記憶媒体

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US5129724A (en) * 1991-01-29 1992-07-14 Wyko Corporation Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
JP3385994B2 (ja) * 1998-02-27 2003-03-10 株式会社ニコン 像検出装置
US6159075A (en) 1999-10-13 2000-12-12 Vlsi Technology, Inc. Method and system for in-situ optimization for semiconductor wafers in a chemical mechanical polishing process
US6927847B2 (en) * 2001-09-13 2005-08-09 Hitachi High-Technologies Corporation Method and apparatus for inspecting pattern defects
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
JP2005321564A (ja) * 2004-05-07 2005-11-17 Canon Inc 多層膜が形成された光学素子の製造方法
CN201318934Y (zh) * 2008-11-07 2009-09-30 四川南光电气有限责任公司 光学膜厚测试仪
KR101849443B1 (ko) 2010-12-20 2018-04-16 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
JP5717711B2 (ja) * 2012-12-07 2015-05-13 東京エレクトロン株式会社 基板の基準画像作成方法、基板の欠陥検査方法、基板の基準画像作成装置、基板の欠陥検査ユニット、プログラム及びコンピュータ記憶媒体
KR102521159B1 (ko) 2014-11-25 2023-04-13 피디에프 솔루션즈, 인코포레이티드 반도체 제조 공정을 위한 개선된 공정 제어 기술

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05240628A (ja) * 1992-03-02 1993-09-17 Toshiba Corp パターン検査装置
JPH0712524A (ja) * 1993-06-24 1995-01-17 Sony Corp 膜厚測定装置
CN101128718A (zh) * 2005-02-25 2008-02-20 真实仪器公司 用于薄膜厚度监测的外差式反射计及其实现方法
CN1969059A (zh) * 2005-04-04 2007-05-23 东京毅力科创株式会社 基板处理方法和基板处理装置
CN101790690A (zh) * 2007-08-03 2010-07-28 罗森伯格高频技术有限及两合公司 非接触式测量系统
JP2010034133A (ja) * 2008-07-25 2010-02-12 Just:Kk 多結晶シリコンウエハのクラック検出装置
CN102749334A (zh) * 2011-04-19 2012-10-24 芝浦机械电子装置股份有限公司 基板检查装置、基板检查方法及基板检查装置的调整方法
JP2014190797A (ja) * 2013-03-27 2014-10-06 Tokushima Densei Kk シリコンウェハの欠陥検査装置
CN104425308A (zh) * 2013-09-09 2015-03-18 东京毅力科创株式会社 测定装置、基板处理系统和测定方法
JP2015127653A (ja) * 2013-12-27 2015-07-09 レーザーテック株式会社 検査装置、及び検査方法
CN105097587A (zh) * 2014-05-08 2015-11-25 东京毅力科创株式会社 膜厚测定装置和膜厚测定方法
WO2016181930A1 (ja) * 2015-05-12 2016-11-17 東京エレクトロン株式会社 基板の検査方法、基板処理システム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
TW201930817A (zh) 2019-08-01
TWI692614B (zh) 2020-05-01
KR102159863B1 (ko) 2020-09-24
JP2019070619A (ja) 2019-05-09
KR20190040907A (ko) 2019-04-19
JP6884082B2 (ja) 2021-06-09
CN109655005A (zh) 2019-04-19

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