KR102121794B1 - 가열 장치 및 기판 가열 방법 - Google Patents

가열 장치 및 기판 가열 방법 Download PDF

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Publication number
KR102121794B1
KR102121794B1 KR1020177027060A KR20177027060A KR102121794B1 KR 102121794 B1 KR102121794 B1 KR 102121794B1 KR 1020177027060 A KR1020177027060 A KR 1020177027060A KR 20177027060 A KR20177027060 A KR 20177027060A KR 102121794 B1 KR102121794 B1 KR 102121794B1
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South Korea
Prior art keywords
substrate
processing system
heating
enclosure
vapor deposition
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Expired - Fee Related
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KR1020177027060A
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English (en)
Korean (ko)
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KR20170117198A (ko
Inventor
에드윈 핑크
필립 호츠
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에바텍 아크티엔게젤샤프트
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    • H01L31/186—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P72/0436—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H01L31/0521—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H10F77/68—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling using gaseous or liquid coolants, e.g. air flow ventilation or water circulation
    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963—Off-grid food refrigeration
    • Y02A40/966—Powered by renewable energy sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
KR1020177027060A 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법 Expired - Fee Related KR102121794B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36791010P 2010-07-27 2010-07-27
US61/367,910 2010-07-27
PCT/EP2011/062912 WO2012013707A1 (en) 2010-07-27 2011-07-27 Heating arrangement and method for heating substrates

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137004891A Division KR101783819B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Publications (2)

Publication Number Publication Date
KR20170117198A KR20170117198A (ko) 2017-10-20
KR102121794B1 true KR102121794B1 (ko) 2020-06-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177027060A Expired - Fee Related KR102121794B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법
KR1020137004891A Expired - Fee Related KR101783819B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Family Applications After (1)

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KR1020137004891A Expired - Fee Related KR101783819B1 (ko) 2010-07-27 2011-07-27 가열 장치 및 기판 가열 방법

Country Status (6)

Country Link
US (1) US10276412B2 (enExample)
EP (1) EP2599115B1 (enExample)
JP (1) JP6088970B2 (enExample)
KR (2) KR102121794B1 (enExample)
CN (1) CN103222041B (enExample)
WO (1) WO2012013707A1 (enExample)

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US20130074358A1 (en) * 2011-09-24 2013-03-28 Quantum Technology Holdings Limited Heated body with high heat transfer rate material and its use
EP2896065A1 (en) * 2012-08-27 2015-07-22 Oerlikon Advanced Technologies AG Processing arrangement with temperature conditioning arrangement and method of processing a substrate
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
WO2016106337A1 (en) * 2014-12-23 2016-06-30 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
KR102592972B1 (ko) * 2016-02-12 2023-10-24 삼성전자주식회사 센싱 모듈 기판 및 이를 포함하는 센싱 모듈
DE102016015502A1 (de) * 2016-12-23 2018-06-28 Singulus Technologies Ag Verfahren und Vorrichtung zur thermischen Behandlung beschichteter Substrate, insbesondere von Dünnschicht-Solarsubstraten
DE102018128243A1 (de) * 2018-11-12 2020-05-14 AM Metals GmbH Herstellvorrichtung zur additiven Fertigung dreidimensionaler Bauteile
JP7398935B2 (ja) * 2019-11-25 2023-12-15 東京エレクトロン株式会社 載置台、及び、検査装置
CN115461491B (zh) * 2020-07-01 2024-08-23 应用材料公司 用于操作腔室的方法、用于处理基板的装置和基板处理系统
DE102020130339A1 (de) * 2020-11-17 2022-05-19 Aixtron Se Heizeinrichtung für einen CVD-Reaktor
WO2024201683A1 (ja) * 2023-03-27 2024-10-03 株式会社日立ハイテク プラズマ処理装置

Citations (3)

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JP2002536829A (ja) * 1999-02-04 2002-10-29 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理（ｒｔｐ）装置のための冷却シャワーヘッド
JP2007329423A (ja) * 2006-06-09 2007-12-20 Tokki Corp 基板加熱装置及び基板加熱方法
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

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JPS63274714A (ja) * 1987-04-28 1988-11-11 Michio Sugiyama 真空熱処理炉用ラジアントチユ−ブヒ−タ
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US5108570A (en) 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
US5700992A (en) * 1993-10-08 1997-12-23 Toshiba Machine Co., Ltd. Zigzag heating device with downward directed connecting portions
JPH07221037A (ja) 1994-02-03 1995-08-18 Dainippon Screen Mfg Co Ltd 熱処理装置
JPH0820868A (ja) * 1994-07-06 1996-01-23 Noboru Naruo 真空加熱均熱ヒーター
JPH08191074A (ja) * 1995-01-10 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH08222360A (ja) * 1995-02-10 1996-08-30 Noboru Naruo 真空加熱兼冷却均熱ヒータ
JPH10208855A (ja) * 1997-01-23 1998-08-07 Toshiba Ceramics Co Ltd 面状ヒータ
JPH1197448A (ja) * 1997-09-18 1999-04-09 Kemitoronikusu:Kk 熱処理装置とこれを用いた半導体結晶の熱処理法
JP3170573B2 (ja) * 1999-06-23 2001-05-28 助川電気工業株式会社 縦型加熱炉用円板状ヒータ
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JP2001332560A (ja) 2000-05-23 2001-11-30 Ibiden Co Ltd 半導体製造・検査装置
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JP4142706B2 (ja) 2006-09-28 2008-09-03 富士フイルム株式会社 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置
US8057601B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US8548311B2 (en) * 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8961691B2 (en) * 2008-09-04 2015-02-24 Tokyo Electron Limited Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method
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JP2002536829A (ja) * 1999-02-04 2002-10-29 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理（ｒｔｐ）装置のための冷却シャワーヘッド
JP2007329423A (ja) * 2006-06-09 2007-12-20 Tokki Corp 基板加熱装置及び基板加熱方法
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

Also Published As

Publication number Publication date
US10276412B2 (en) 2019-04-30
WO2012013707A1 (en) 2012-02-02
KR101783819B1 (ko) 2017-10-10
EP2599115B1 (en) 2015-02-25
JP6088970B2 (ja) 2017-03-01
KR20170117198A (ko) 2017-10-20
KR20130105606A (ko) 2013-09-25
US20140202027A1 (en) 2014-07-24
JP2013541176A (ja) 2013-11-07
CN103222041B (zh) 2016-01-20
EP2599115A1 (en) 2013-06-05
CN103222041A (zh) 2013-07-24

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