JP6088970B2 - 加熱配置構成及び基板を加熱するための方法 - Google Patents

加熱配置構成及び基板を加熱するための方法 Download PDF

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Publication number
JP6088970B2
JP6088970B2 JP2013521130A JP2013521130A JP6088970B2 JP 6088970 B2 JP6088970 B2 JP 6088970B2 JP 2013521130 A JP2013521130 A JP 2013521130A JP 2013521130 A JP2013521130 A JP 2013521130A JP 6088970 B2 JP6088970 B2 JP 6088970B2
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Prior art keywords
substrate
heating
processing system
heating means
vacuum processing
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Japanese (ja)
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JP2013541176A5 (enExample
JP2013541176A (ja
Inventor
エドウィン ピンク
エドウィン ピンク
フィリップ ホッズ
フィリップ ホッズ
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テーエーエル・ソーラー・アーゲー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P72/0436—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H10F77/68—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling using gaseous or liquid coolants, e.g. air flow ventilation or water circulation
    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963—Off-grid food refrigeration
    • Y02A40/966—Powered by renewable energy sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
JP2013521130A 2010-07-27 2011-07-27 加熱配置構成及び基板を加熱するための方法 Expired - Fee Related JP6088970B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36791010P 2010-07-27 2010-07-27
US61/367,910 2010-07-27
PCT/EP2011/062912 WO2012013707A1 (en) 2010-07-27 2011-07-27 Heating arrangement and method for heating substrates

Publications (3)

Publication Number Publication Date
JP2013541176A JP2013541176A (ja) 2013-11-07
JP2013541176A5 JP2013541176A5 (enExample) 2014-09-18
JP6088970B2 true JP6088970B2 (ja) 2017-03-01

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JP2013521130A Expired - Fee Related JP6088970B2 (ja) 2010-07-27 2011-07-27 加熱配置構成及び基板を加熱するための方法

Country Status (6)

Country Link
US (1) US10276412B2 (enExample)
EP (1) EP2599115B1 (enExample)
JP (1) JP6088970B2 (enExample)
KR (2) KR102121794B1 (enExample)
CN (1) CN103222041B (enExample)
WO (1) WO2012013707A1 (enExample)

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US20130074358A1 (en) * 2011-09-24 2013-03-28 Quantum Technology Holdings Limited Heated body with high heat transfer rate material and its use
EP2896065A1 (en) * 2012-08-27 2015-07-22 Oerlikon Advanced Technologies AG Processing arrangement with temperature conditioning arrangement and method of processing a substrate
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
WO2016106337A1 (en) * 2014-12-23 2016-06-30 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
KR102592972B1 (ko) * 2016-02-12 2023-10-24 삼성전자주식회사 센싱 모듈 기판 및 이를 포함하는 센싱 모듈
DE102016015502A1 (de) * 2016-12-23 2018-06-28 Singulus Technologies Ag Verfahren und Vorrichtung zur thermischen Behandlung beschichteter Substrate, insbesondere von Dünnschicht-Solarsubstraten
DE102018128243A1 (de) * 2018-11-12 2020-05-14 AM Metals GmbH Herstellvorrichtung zur additiven Fertigung dreidimensionaler Bauteile
JP7398935B2 (ja) * 2019-11-25 2023-12-15 東京エレクトロン株式会社 載置台、及び、検査装置
CN115461491B (zh) * 2020-07-01 2024-08-23 应用材料公司 用于操作腔室的方法、用于处理基板的装置和基板处理系统
DE102020130339A1 (de) * 2020-11-17 2022-05-19 Aixtron Se Heizeinrichtung für einen CVD-Reaktor
WO2024201683A1 (ja) * 2023-03-27 2024-10-03 株式会社日立ハイテク プラズマ処理装置

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US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US5108570A (en) 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
US5700992A (en) * 1993-10-08 1997-12-23 Toshiba Machine Co., Ltd. Zigzag heating device with downward directed connecting portions
JPH07221037A (ja) 1994-02-03 1995-08-18 Dainippon Screen Mfg Co Ltd 熱処理装置
JPH0820868A (ja) * 1994-07-06 1996-01-23 Noboru Naruo 真空加熱均熱ヒーター
JPH08191074A (ja) * 1995-01-10 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH08222360A (ja) * 1995-02-10 1996-08-30 Noboru Naruo 真空加熱兼冷却均熱ヒータ
JPH10208855A (ja) * 1997-01-23 1998-08-07 Toshiba Ceramics Co Ltd 面状ヒータ
JPH1197448A (ja) * 1997-09-18 1999-04-09 Kemitoronikusu:Kk 熱処理装置とこれを用いた半導体結晶の熱処理法
EP1155437B1 (en) * 1999-02-04 2008-08-20 STEAG RTP Systems GmbH Cooled showerhead for rapid thermal processing (rtp) system
JP3170573B2 (ja) * 1999-06-23 2001-05-28 助川電気工業株式会社 縦型加熱炉用円板状ヒータ
US6342691B1 (en) 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
JP2001332560A (ja) 2000-05-23 2001-11-30 Ibiden Co Ltd 半導体製造・検査装置
JP2004146570A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP4227578B2 (ja) * 2003-09-30 2009-02-18 キヤノン株式会社 加熱方法および画像表示装置の製造方法
JP4710255B2 (ja) * 2004-03-26 2011-06-29 ウシオ電機株式会社 加熱ステージ
JP4377296B2 (ja) * 2004-07-30 2009-12-02 エア・ウォーター株式会社 成膜装置
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US20100151680A1 (en) * 2008-12-17 2010-06-17 Optisolar Inc. Substrate carrier with enhanced temperature uniformity

Also Published As

Publication number Publication date
US10276412B2 (en) 2019-04-30
WO2012013707A1 (en) 2012-02-02
KR101783819B1 (ko) 2017-10-10
EP2599115B1 (en) 2015-02-25
KR102121794B1 (ko) 2020-06-12
KR20170117198A (ko) 2017-10-20
KR20130105606A (ko) 2013-09-25
US20140202027A1 (en) 2014-07-24
JP2013541176A (ja) 2013-11-07
CN103222041B (zh) 2016-01-20
EP2599115A1 (en) 2013-06-05
CN103222041A (zh) 2013-07-24

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