CN103222041B - 用于加热基板的加热装置和方法 - Google Patents

用于加热基板的加热装置和方法 Download PDF

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Publication number
CN103222041B
CN103222041B CN201180036622.4A CN201180036622A CN103222041B CN 103222041 B CN103222041 B CN 103222041B CN 201180036622 A CN201180036622 A CN 201180036622A CN 103222041 B CN103222041 B CN 103222041B
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CN
China
Prior art keywords
substrate
heater
plane
reflection unit
equal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180036622.4A
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English (en)
Chinese (zh)
Other versions
CN103222041A (zh
Inventor
埃德温·平克
菲利普·霍茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evatec AG
Original Assignee
Oerlikon Solar AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Solar AG filed Critical Oerlikon Solar AG
Publication of CN103222041A publication Critical patent/CN103222041A/zh
Application granted granted Critical
Publication of CN103222041B publication Critical patent/CN103222041B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P72/0436—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H10F77/68—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling using gaseous or liquid coolants, e.g. air flow ventilation or water circulation
    • H10P72/0434—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963—Off-grid food refrigeration
    • Y02A40/966—Powered by renewable energy sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
CN201180036622.4A 2010-07-27 2011-07-27 用于加热基板的加热装置和方法 Expired - Fee Related CN103222041B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36791010P 2010-07-27 2010-07-27
US61/367,910 2010-07-27
PCT/EP2011/062912 WO2012013707A1 (en) 2010-07-27 2011-07-27 Heating arrangement and method for heating substrates

Publications (2)

Publication Number Publication Date
CN103222041A CN103222041A (zh) 2013-07-24
CN103222041B true CN103222041B (zh) 2016-01-20

Family

ID=44681074

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180036622.4A Expired - Fee Related CN103222041B (zh) 2010-07-27 2011-07-27 用于加热基板的加热装置和方法

Country Status (6)

Country Link
US (1) US10276412B2 (enExample)
EP (1) EP2599115B1 (enExample)
JP (1) JP6088970B2 (enExample)
KR (2) KR102121794B1 (enExample)
CN (1) CN103222041B (enExample)
WO (1) WO2012013707A1 (enExample)

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US20130074358A1 (en) * 2011-09-24 2013-03-28 Quantum Technology Holdings Limited Heated body with high heat transfer rate material and its use
EP2896065A1 (en) * 2012-08-27 2015-07-22 Oerlikon Advanced Technologies AG Processing arrangement with temperature conditioning arrangement and method of processing a substrate
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
WO2016106337A1 (en) * 2014-12-23 2016-06-30 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
KR102592972B1 (ko) * 2016-02-12 2023-10-24 삼성전자주식회사 센싱 모듈 기판 및 이를 포함하는 센싱 모듈
DE102016015502A1 (de) * 2016-12-23 2018-06-28 Singulus Technologies Ag Verfahren und Vorrichtung zur thermischen Behandlung beschichteter Substrate, insbesondere von Dünnschicht-Solarsubstraten
DE102018128243A1 (de) * 2018-11-12 2020-05-14 AM Metals GmbH Herstellvorrichtung zur additiven Fertigung dreidimensionaler Bauteile
JP7398935B2 (ja) * 2019-11-25 2023-12-15 東京エレクトロン株式会社 載置台、及び、検査装置
CN115461491B (zh) * 2020-07-01 2024-08-23 应用材料公司 用于操作腔室的方法、用于处理基板的装置和基板处理系统
DE102020130339A1 (de) * 2020-11-17 2022-05-19 Aixtron Se Heizeinrichtung für einen CVD-Reaktor
WO2024201683A1 (ja) * 2023-03-27 2024-10-03 株式会社日立ハイテク プラズマ処理装置

Citations (3)

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WO2000046840A1 (en) * 1999-02-04 2000-08-10 Steag Rtp Systems Gmbh Cooled showerhead for rapid thermal processing (rtp) system
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

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JPS63274714A (ja) * 1987-04-28 1988-11-11 Michio Sugiyama 真空熱処理炉用ラジアントチユ−ブヒ−タ
US4832778A (en) * 1987-07-16 1989-05-23 Texas Instruments Inc. Processing apparatus for wafers
US5108570A (en) 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
US5700992A (en) * 1993-10-08 1997-12-23 Toshiba Machine Co., Ltd. Zigzag heating device with downward directed connecting portions
JPH07221037A (ja) 1994-02-03 1995-08-18 Dainippon Screen Mfg Co Ltd 熱処理装置
JPH0820868A (ja) * 1994-07-06 1996-01-23 Noboru Naruo 真空加熱均熱ヒーター
JPH08191074A (ja) * 1995-01-10 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH08222360A (ja) * 1995-02-10 1996-08-30 Noboru Naruo 真空加熱兼冷却均熱ヒータ
JPH10208855A (ja) * 1997-01-23 1998-08-07 Toshiba Ceramics Co Ltd 面状ヒータ
JPH1197448A (ja) * 1997-09-18 1999-04-09 Kemitoronikusu:Kk 熱処理装置とこれを用いた半導体結晶の熱処理法
JP3170573B2 (ja) * 1999-06-23 2001-05-28 助川電気工業株式会社 縦型加熱炉用円板状ヒータ
JP2001332560A (ja) 2000-05-23 2001-11-30 Ibiden Co Ltd 半導体製造・検査装置
JP2004146570A (ja) * 2002-10-24 2004-05-20 Sumitomo Electric Ind Ltd 半導体製造装置用セラミックスヒーター
JP4227578B2 (ja) * 2003-09-30 2009-02-18 キヤノン株式会社 加熱方法および画像表示装置の製造方法
JP4710255B2 (ja) * 2004-03-26 2011-06-29 ウシオ電機株式会社 加熱ステージ
JP4377296B2 (ja) * 2004-07-30 2009-12-02 エア・ウォーター株式会社 成膜装置
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JP4142706B2 (ja) 2006-09-28 2008-09-03 富士フイルム株式会社 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置
US8057601B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US8548311B2 (en) * 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8961691B2 (en) * 2008-09-04 2015-02-24 Tokyo Electron Limited Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method
US8294068B2 (en) * 2008-09-10 2012-10-23 Applied Materials, Inc. Rapid thermal processing lamphead with improved cooling
US20100151680A1 (en) * 2008-12-17 2010-06-17 Optisolar Inc. Substrate carrier with enhanced temperature uniformity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046840A1 (en) * 1999-02-04 2000-08-10 Steag Rtp Systems Gmbh Cooled showerhead for rapid thermal processing (rtp) system
US6342691B1 (en) * 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
JP2010135531A (ja) * 2008-12-04 2010-06-17 Shimadzu Corp 真空加熱装置

Also Published As

Publication number Publication date
US10276412B2 (en) 2019-04-30
WO2012013707A1 (en) 2012-02-02
KR101783819B1 (ko) 2017-10-10
EP2599115B1 (en) 2015-02-25
JP6088970B2 (ja) 2017-03-01
KR102121794B1 (ko) 2020-06-12
KR20170117198A (ko) 2017-10-20
KR20130105606A (ko) 2013-09-25
US20140202027A1 (en) 2014-07-24
JP2013541176A (ja) 2013-11-07
EP2599115A1 (en) 2013-06-05
CN103222041A (zh) 2013-07-24

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200305

Address after: Swiss Te Lui Bach

Patentee after: EVATEC AG

Address before: Swiss Te Lui Bach

Patentee before: OERLIKON SOLAR AG, TRuBBACH

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160120

CF01 Termination of patent right due to non-payment of annual fee