KR102120268B1 - 발광 장치 - Google Patents

발광 장치 Download PDF

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KR102120268B1
KR102120268B1 KR1020140049185A KR20140049185A KR102120268B1 KR 102120268 B1 KR102120268 B1 KR 102120268B1 KR 1020140049185 A KR1020140049185 A KR 1020140049185A KR 20140049185 A KR20140049185 A KR 20140049185A KR 102120268 B1 KR102120268 B1 KR 102120268B1
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South Korea
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metal wire
type semiconductor
semiconductor layer
electrode
pad electrode
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KR20140128255A (ko
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아키노리 요네다
아키요시 기노우치
히사시 가사이
요시유키 아이하라
히로카즈 사사
신지 나카무라
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니치아 카가쿠 고교 가부시키가이샤
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    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
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    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
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    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
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    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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KR1020140049185A 2013-04-26 2014-04-24 발광 장치 Active KR102120268B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013094235 2013-04-26
JPJP-P-2013-094235 2013-04-26
JP2014057970A JP6273945B2 (ja) 2013-04-26 2014-03-20 発光装置
JPJP-P-2014-057970 2014-03-20

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KR20140128255A KR20140128255A (ko) 2014-11-05
KR102120268B1 true KR102120268B1 (ko) 2020-06-08

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US (3) US9093612B2 (https=)
EP (1) EP2797131B1 (https=)
JP (1) JP6273945B2 (https=)
KR (1) KR102120268B1 (https=)
CN (1) CN104124319B (https=)
BR (1) BR102014009947B1 (https=)
IN (1) IN2014CH02110A (https=)
TW (1) TWI599080B (https=)

Families Citing this family (13)

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Publication number Priority date Publication date Assignee Title
JP6273945B2 (ja) * 2013-04-26 2018-02-07 日亜化学工業株式会社 発光装置
JP6354273B2 (ja) 2014-04-10 2018-07-11 日亜化学工業株式会社 発光装置及び発光装置の製造方法
US9978724B2 (en) 2014-06-27 2018-05-22 Bridgelux, Inc. Red flip chip light emitting diode, package, and method of making the same
JP6384202B2 (ja) * 2014-08-28 2018-09-05 日亜化学工業株式会社 発光装置の製造方法
US9842831B2 (en) 2015-05-14 2017-12-12 Mediatek Inc. Semiconductor package and fabrication method thereof
US10685943B2 (en) 2015-05-14 2020-06-16 Mediatek Inc. Semiconductor chip package with resilient conductive paste post and fabrication method thereof
JP6471641B2 (ja) 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
JP6717324B2 (ja) 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
JP6978697B2 (ja) 2018-11-15 2021-12-08 日亜化学工業株式会社 発光装置の製造方法
JP7004948B2 (ja) 2019-04-27 2022-01-21 日亜化学工業株式会社 発光モジュールの製造方法
MX2021013719A (es) * 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Paquete de chip led y metodo de manufactura del mismo.
US11672256B2 (en) * 2020-08-11 2023-06-13 EAST HAMPTON SHUCKER COMPANY, Inc. Oyster shucking clamp apparatus and method
CN116344487B (zh) * 2021-12-21 2025-07-04 长鑫存储技术有限公司 一种半导体结构及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049383A (ja) 1998-07-27 2000-02-18 Matsushita Electron Corp 光電変換素子及びその製造方法
US20080173884A1 (en) 2007-01-22 2008-07-24 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US20090014858A1 (en) * 2007-07-09 2009-01-15 Micron Technology, Inc. Packaged semiconductor assemblies and methods for manufacturing such assemblies
JP2012142326A (ja) * 2010-12-28 2012-07-26 Mitsubishi Heavy Ind Ltd 発光素子及び発光素子の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299530A (ja) 1992-04-17 1993-11-12 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP2606267Y2 (ja) * 1992-10-22 2000-10-10 日本航空電子工業株式会社 表面実装用チップ発光ダイオード及びそれを用いたメンブレンシートスィッチ
JP2000244012A (ja) * 1998-12-22 2000-09-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
JP4214704B2 (ja) 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
US7009305B2 (en) * 2004-06-30 2006-03-07 Agere Systems Inc. Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
JP5068472B2 (ja) * 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP4926787B2 (ja) 2007-03-30 2012-05-09 アオイ電子株式会社 半導体装置の製造方法
TWI382770B (zh) * 2008-12-11 2013-01-11 Univ Nat Taiwan 視訊影像傳輸中遇到封包遺失時的有效選取方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
WO2010150809A1 (ja) 2009-06-24 2010-12-29 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP5152133B2 (ja) 2009-09-18 2013-02-27 豊田合成株式会社 発光素子
WO2011145794A1 (ko) * 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
EP2448028B1 (en) * 2010-10-29 2017-05-31 Nichia Corporation Light emitting apparatus and production method thereof
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
US9269878B2 (en) 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
KR101276053B1 (ko) * 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
JP5755102B2 (ja) 2011-10-14 2015-07-29 シチズンホールディングス株式会社 半導体発光素子
KR101932727B1 (ko) * 2012-05-07 2018-12-27 삼성전자주식회사 범프 구조물, 이를 갖는 반도체 패키지 및 이의 제조 방법
JP6273945B2 (ja) * 2013-04-26 2018-02-07 日亜化学工業株式会社 発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049383A (ja) 1998-07-27 2000-02-18 Matsushita Electron Corp 光電変換素子及びその製造方法
US20080173884A1 (en) 2007-01-22 2008-07-24 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US20090014858A1 (en) * 2007-07-09 2009-01-15 Micron Technology, Inc. Packaged semiconductor assemblies and methods for manufacturing such assemblies
JP2012142326A (ja) * 2010-12-28 2012-07-26 Mitsubishi Heavy Ind Ltd 発光素子及び発光素子の製造方法

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