IN2014CH02110A - - Google Patents

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Publication number
IN2014CH02110A
IN2014CH02110A IN2110CH2014A IN2014CH02110A IN 2014CH02110 A IN2014CH02110 A IN 2014CH02110A IN 2110CH2014 A IN2110CH2014 A IN 2110CH2014A IN 2014CH02110 A IN2014CH02110 A IN 2014CH02110A
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IN
India
Prior art keywords
semiconductor chip
type semiconductor
semiconductor layer
disposed
pad electrode
Prior art date
Application number
Inventor
Akinori Yoneda
Akiyoshi Kinouchi
Hisashi Kasai
Yoshiyuki Aihara
Hirokazu Sasa
Shinji Nakamura
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of IN2014CH02110A publication Critical patent/IN2014CH02110A/en

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
IN2110CH2014 2013-04-26 2014-04-25 IN2014CH02110A (en)

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JP2014057970A JP6273945B2 (en) 2013-04-26 2014-03-20 Light emitting device

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CN (1) CN104124319B (en)
BR (1) BR102014009947B1 (en)
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BR102014009947A2 (en) 2015-10-13
KR20140128255A (en) 2014-11-05
TWI599080B (en) 2017-09-11
CN104124319B (en) 2018-01-02
JP6273945B2 (en) 2018-02-07
EP2797131B1 (en) 2020-11-11
US9093612B2 (en) 2015-07-28
US20160365498A1 (en) 2016-12-15
US9461216B2 (en) 2016-10-04
US20140319567A1 (en) 2014-10-30
JP2014225644A (en) 2014-12-04
US20150311410A1 (en) 2015-10-29
KR102120268B1 (en) 2020-06-08
US10224470B2 (en) 2019-03-05
BR102014009947B1 (en) 2021-12-21
EP2797131A1 (en) 2014-10-29
TW201501375A (en) 2015-01-01
CN104124319A (en) 2014-10-29

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