KR102101760B1 - 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 - Google Patents

반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 Download PDF

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KR102101760B1
KR102101760B1 KR1020180100186A KR20180100186A KR102101760B1 KR 102101760 B1 KR102101760 B1 KR 102101760B1 KR 1020180100186 A KR1020180100186 A KR 1020180100186A KR 20180100186 A KR20180100186 A KR 20180100186A KR 102101760 B1 KR102101760 B1 KR 102101760B1
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South Korea
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block
collet
die
suction hole
dicing tape
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Korean (ko)
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KR20190032180A (ko
Inventor
아끼라 사이또
나오끼 오까모또
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파스포드 테크놀로지 주식회사
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    • H01L21/67132—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H01L21/02—
    • H01L21/67259—
    • H01L21/67712—
    • H01L21/6836—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
KR1020180100186A 2017-09-19 2018-08-27 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 Active KR102101760B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017178987A JP6967411B2 (ja) 2017-09-19 2017-09-19 半導体製造装置、半導体装置の製造方法およびコレット
JPJP-P-2017-178987 2017-09-19

Publications (2)

Publication Number Publication Date
KR20190032180A KR20190032180A (ko) 2019-03-27
KR102101760B1 true KR102101760B1 (ko) 2020-04-20

Family

ID=65771255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180100186A Active KR102101760B1 (ko) 2017-09-19 2018-08-27 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿

Country Status (4)

Country Link
JP (1) JP6967411B2 (https=)
KR (1) KR102101760B1 (https=)
CN (1) CN109524313B (https=)
TW (1) TWI705524B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7377654B2 (ja) * 2019-09-17 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置、剥離ユニット、コレットおよび半導体装置の製造方法
JP7343402B2 (ja) * 2020-01-08 2023-09-12 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法およびエキスパンド装置
JP7412219B2 (ja) * 2020-02-25 2024-01-12 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および剥離装置
JP7488062B2 (ja) * 2020-03-02 2024-05-21 東京エレクトロン株式会社 接合装置、接合システム、接合方法および記憶媒体
TWI810522B (zh) * 2020-03-23 2023-08-01 日商捷進科技有限公司 晶片接合裝置、剝離治具及半導體裝置的製造方法
KR102405424B1 (ko) * 2020-06-25 2022-06-07 한화정밀기계 주식회사 웨이퍼 스테이지 장치
KR102819884B1 (ko) * 2020-07-20 2025-06-12 한화세미텍 주식회사 다이 박리 장치 및 이를 이용한 다이 박리 방법
KR102866416B1 (ko) * 2020-12-08 2025-09-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065628A (ja) 2011-09-15 2013-04-11 Hitachi High-Tech Instruments Co Ltd ダイボンダ並びにダイピックアップ装置及びダイピックアップ方法
JP2013219403A (ja) 2013-08-02 2013-10-24 Renesas Electronics Corp 半導体集積回路装置の製造方法

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JPH11274202A (ja) * 1998-03-24 1999-10-08 Fuji Xerox Co Ltd バンプ形成装置およびバンプ形成に使用されるチップトレイ
JP3848606B2 (ja) * 2002-08-26 2006-11-22 日東電工株式会社 コレットおよびそれを用いてチップ部品をピックアップする方法
JP4405211B2 (ja) * 2003-09-08 2010-01-27 パナソニック株式会社 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置
JP4574251B2 (ja) * 2003-09-17 2010-11-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2005029574A1 (ja) * 2003-09-18 2005-03-31 Nec Machinery Corporation コレット、ダイボンダおよびチップのピックアップ方法
JP2005322815A (ja) * 2004-05-11 2005-11-17 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
JP4864816B2 (ja) * 2007-06-19 2012-02-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4945339B2 (ja) * 2007-06-22 2012-06-06 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TWI463580B (zh) * 2007-06-19 2014-12-01 瑞薩科技股份有限公司 Manufacturing method of semiconductor integrated circuit device
KR20100065185A (ko) * 2007-10-09 2010-06-15 히다치 가세고교 가부시끼가이샤 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
JP2010129588A (ja) * 2008-11-25 2010-06-10 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4397429B1 (ja) * 2009-03-05 2010-01-13 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP5123357B2 (ja) * 2010-06-17 2013-01-23 株式会社日立ハイテクインスツルメンツ ダイボンダ及びピックアップ装置
JP5777202B2 (ja) * 2011-02-14 2015-09-09 富士機械製造株式会社 ダイピックアップ装置
JP5805411B2 (ja) * 2011-03-23 2015-11-04 ファスフォードテクノロジ株式会社 ダイボンダのピックアップ方法およびダイボンダ
JP2012248778A (ja) * 2011-05-31 2012-12-13 Hitachi High-Tech Instruments Co Ltd ダイボンダ及びボンディング方法
JP2013165230A (ja) * 2012-02-13 2013-08-22 Elpida Memory Inc 吸着コレット及び半導体装置の製造方法
JP2013214683A (ja) * 2012-04-04 2013-10-17 Mitsubishi Electric Corp 半導体チップのピックアップ装置
JP2014179561A (ja) * 2013-03-15 2014-09-25 Hitachi High-Tech Instruments Co Ltd ボンディングヘッドとそれを備えたダイボンダ
JP2015076410A (ja) 2013-10-04 2015-04-20 株式会社日立ハイテクインスツルメンツ ボンディング方法及びダイボンダ
JP6400938B2 (ja) * 2014-04-30 2018-10-03 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP5888455B1 (ja) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 半導体製造装置および半導体片の製造方法
JP6573813B2 (ja) * 2015-09-30 2019-09-11 ファスフォードテクノロジ株式会社 ダイボンダおよび半導体装置の製造方法

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2013065628A (ja) 2011-09-15 2013-04-11 Hitachi High-Tech Instruments Co Ltd ダイボンダ並びにダイピックアップ装置及びダイピックアップ方法
JP2013219403A (ja) 2013-08-02 2013-10-24 Renesas Electronics Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
TWI705524B (zh) 2020-09-21
KR20190032180A (ko) 2019-03-27
JP2019054209A (ja) 2019-04-04
CN109524313B (zh) 2022-12-30
JP6967411B2 (ja) 2021-11-17
CN109524313A (zh) 2019-03-26
TW201923963A (zh) 2019-06-16

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