KR102101536B1 - 웨이퍼 형상의 물품들을 프로세싱하기 위한 방법 및 장치 - Google Patents

웨이퍼 형상의 물품들을 프로세싱하기 위한 방법 및 장치 Download PDF

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Publication number
KR102101536B1
KR102101536B1 KR1020170065174A KR20170065174A KR102101536B1 KR 102101536 B1 KR102101536 B1 KR 102101536B1 KR 1020170065174 A KR1020170065174 A KR 1020170065174A KR 20170065174 A KR20170065174 A KR 20170065174A KR 102101536 B1 KR102101536 B1 KR 102101536B1
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South Korea
Prior art keywords
rotating chuck
wafer
shaped article
heating elements
chuck
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Korean (ko)
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KR20170135714A (ko
Inventor
데이비드 무이
부치 버니
알로이스 골러
마이크 라브킨
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램 리서치 아게
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    • H01L21/67115—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H01L21/67017—
    • H01L21/6715—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Cleaning Or Drying Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020170065174A 2016-05-31 2017-05-26 웨이퍼 형상의 물품들을 프로세싱하기 위한 방법 및 장치 Active KR102101536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/169,330 2016-05-31
US15/169,330 US10720343B2 (en) 2016-05-31 2016-05-31 Method and apparatus for processing wafer-shaped articles

Publications (2)

Publication Number Publication Date
KR20170135714A KR20170135714A (ko) 2017-12-08
KR102101536B1 true KR102101536B1 (ko) 2020-04-17

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KR1020170065174A Active KR102101536B1 (ko) 2016-05-31 2017-05-26 웨이퍼 형상의 물품들을 프로세싱하기 위한 방법 및 장치

Country Status (6)

Country Link
US (2) US10720343B2 (https=)
JP (2) JP7231321B2 (https=)
KR (1) KR102101536B1 (https=)
CN (1) CN107452654B (https=)
SG (1) SG10201704180PA (https=)
TW (1) TWI734788B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
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US10861719B2 (en) 2016-05-31 2020-12-08 Lam Research Ag Method and apparatus for processing wafer-shaped articles
KR20210124366A (ko) * 2019-02-06 2021-10-14 램 리서치 아게 웨이퍼를 프로세싱하기 위한 장치 및 이러한 장치를 제어하는 방법
KR20250154116A (ko) 2024-04-19 2025-10-28 렉트론디에스피 주식회사 Led 가열부 및 이를 구비하는 led 스핀 척
KR20250157020A (ko) 2024-04-26 2025-11-04 주식회사 에이치에스하이테크 Led 히터 시스템 및 이를 구비하는 반도체 웨이퍼 처리 장치

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US10658204B2 (en) 2017-08-08 2020-05-19 Lam Research Ag Spin chuck with concentrated center and radial heating
US11043403B2 (en) 2018-04-06 2021-06-22 Semes Co., Ltd. Substrate support unit and substrate processing apparatus having the same including reflective member configured to reflect light toward substrate
KR102208753B1 (ko) * 2018-04-06 2021-01-28 세메스 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
KR102078157B1 (ko) 2018-04-16 2020-02-17 세메스 주식회사 기판 가열 유닛 및 이를 갖는 기판 처리 장치
JP7175119B2 (ja) * 2018-07-25 2022-11-18 東京エレクトロン株式会社 基板処理装置、および基板処理方法
KR102102277B1 (ko) 2018-09-20 2020-04-20 주식회사 에이치에스하이테크 웨이퍼를 프로세싱하기 위한 장치
KR102244605B1 (ko) 2018-09-20 2021-04-26 주식회사 에이치에스하이테크 웨이퍼를 프로세싱하기 위한 장치
KR102102202B1 (ko) * 2018-11-07 2020-04-21 세메스 주식회사 기판 처리 장치 및 시스템
GB201900912D0 (en) 2019-01-23 2019-03-13 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus
KR102232654B1 (ko) * 2019-08-05 2021-03-26 주식회사 에이치에스하이테크 엘이디 스핀척
KR102303593B1 (ko) * 2019-11-05 2021-09-23 세메스 주식회사 기판 처리 장치 및 방법
KR102347145B1 (ko) * 2020-01-29 2022-01-04 무진전자 주식회사 회전 척에 내장된 광원을 이용한 기판 처리 장치
GB202002798D0 (en) 2020-02-27 2020-04-15 Lam Res Ag Apparatus for processing a wafer
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
KR102347146B1 (ko) * 2020-06-09 2022-01-04 무진전자 주식회사 광원을 이용한 기판 처리 장치
GB202015527D0 (en) 2020-09-30 2020-11-11 Lam Res Ag Apparatus for processing wafer-shaped articles
GB202016750D0 (en) 2020-10-22 2020-12-09 Lam Res Ag Apparatus for processing a wafer-shaped article
KR102584511B1 (ko) * 2020-12-07 2023-10-06 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
GB202101428D0 (en) 2021-02-02 2021-03-17 Lam Res Ag Apparatus for dispensing a liquid
JP7625458B2 (ja) * 2021-03-22 2025-02-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11832520B2 (en) * 2021-04-27 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage breakdown uniformity in piezoelectric structure for piezoelectric devices
JP2025037020A (ja) * 2023-09-05 2025-03-17 ウシオ電機株式会社 光源ユニット
KR102665721B1 (ko) * 2023-09-15 2024-05-13 (주)디바이스이엔지 발열부가 장착된 기판 처리장치
KR102675833B1 (ko) * 2023-09-15 2024-06-17 (주)디바이스이엔지 발열부가 장착된 기판 처리장치
GB202315890D0 (en) 2023-10-17 2023-11-29 Lam Res Ag Apparatus for processing a wafer
WO2026057273A1 (en) 2024-09-10 2026-03-19 Lam Research Ag Apparatus for processing wafer-shaped articles

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10861719B2 (en) 2016-05-31 2020-12-08 Lam Research Ag Method and apparatus for processing wafer-shaped articles
KR20210124366A (ko) * 2019-02-06 2021-10-14 램 리서치 아게 웨이퍼를 프로세싱하기 위한 장치 및 이러한 장치를 제어하는 방법
KR102904929B1 (ko) * 2019-02-06 2025-12-26 램 리서치 아게 웨이퍼를 프로세싱하기 위한 장치 및 이러한 장치를 제어하는 방법
KR20250154116A (ko) 2024-04-19 2025-10-28 렉트론디에스피 주식회사 Led 가열부 및 이를 구비하는 led 스핀 척
KR20250174847A (ko) 2024-04-19 2025-12-15 렉트론디에스피 주식회사 Led 가열부 및 이를 구비하는 led 스핀 척
KR20250157020A (ko) 2024-04-26 2025-11-04 주식회사 에이치에스하이테크 Led 히터 시스템 및 이를 구비하는 반도체 웨이퍼 처리 장치
KR20250160113A (ko) 2024-04-26 2025-11-11 주식회사 에이치에스하이테크 Led 히터 시스템 및 이를 구비하는 반도체 웨이퍼 처리 장치
KR20250160112A (ko) 2024-04-26 2025-11-11 주식회사 에이치에스하이테크 Led 히터 시스템 및 이를 구비하는 반도체 웨이퍼 처리 장치
KR20250165240A (ko) 2024-04-26 2025-11-25 주식회사 에이치에스하이테크 Led 히터 시스템 및 이를 구비하는 반도체 웨이퍼 처리 장치

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Publication number Publication date
KR20170135714A (ko) 2017-12-08
JP7231321B2 (ja) 2023-03-01
JP2017224807A (ja) 2017-12-21
CN107452654A (zh) 2017-12-08
CN107452654B (zh) 2020-11-24
US10720343B2 (en) 2020-07-21
JP7324323B2 (ja) 2023-08-09
US20200227284A1 (en) 2020-07-16
US10861719B2 (en) 2020-12-08
TW201806058A (zh) 2018-02-16
US20170345681A1 (en) 2017-11-30
TWI734788B (zh) 2021-08-01
SG10201704180PA (en) 2017-12-28
JP2022058827A (ja) 2022-04-12

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