JP6351948B2 - 円板状物品の液体処理装置およびかかる装置で用いる加熱システム - Google Patents
円板状物品の液体処理装置およびかかる装置で用いる加熱システム Download PDFInfo
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- JP6351948B2 JP6351948B2 JP2013213420A JP2013213420A JP6351948B2 JP 6351948 B2 JP6351948 B2 JP 6351948B2 JP 2013213420 A JP2013213420 A JP 2013213420A JP 2013213420 A JP2013213420 A JP 2013213420A JP 6351948 B2 JP6351948 B2 JP 6351948B2
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- 238000010438 heat treatment Methods 0.000 title claims description 137
- 239000007788 liquid Substances 0.000 title description 12
- 230000005855 radiation Effects 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 31
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Resistance Heating (AREA)
Description
Claims (13)
- 円板状物品を処理するための装置であって、
スピンチャックの上面に対して所定の向きに前記円板状物品を保持するためのスピンチャックと、
前記スピンチャックの前記上面の上方、かつ、前記スピンチャック上に載置された前記円板状物品の下方に位置する少なくとも3つの別個に制御可能な加熱素子と
を備え、
前記加熱素子は、前記スピンチャックが回転しても静止するように取り付けられ、
前記少なくとも3つの別個に制御可能な加熱素子は、前記スピンチャック上に載置された前記円板状物品に隣接する別個に制御可能な内側、中間、および、外側の加熱領域を規定するように入れ子構成で配置され、
さらに、前記少なくとも3つの別個に制御可能な加熱素子によって放射された赤外線放射に対して透過性のあるプレートを備え、
前記プレートは、前記少なくとも3つの別個に制御可能な加熱素子と、前記スピンチャック上に載置された円板状物品との間に位置する装置。 - 請求項1に記載の装置であって、前記加熱素子の各々は、前記加熱素子の各々が前記スピンチャックの回転軸から異なる距離の領域を加熱するような形状および配置の少なくとも一方を有する装置。
- 請求項2に記載の装置であって、前記加熱素子の各々は、実質的に前記スピンチャックの回転軸から偏心した円の円弧に沿って伸びる曲線部分を備える装置。
- 請求項1に記載の装置であって、前記加熱素子の各々は、曲線部分によって相互接続された2つの直線部分を備える装置。
- 請求項4に記載の装置であって、前記2つの直線部分は互いに平行である装置。
- 請求項1に記載の装置であって、前記加熱素子の各々は、円の円弧に沿って伸びる曲線部分を備え、各加熱素子の前記円は、前記加熱素子の内の少なくとも他の2つの前記円と同心である装置。
- 請求項1に記載の装置であって、前記少なくとも3つの別個に制御可能な加熱素子の内のいずれの加熱素子の放射部分に外接する円も、前記少なくとも3つの別個に制御可能な加熱素子の内の他の加熱素子の放射部分に外接する円と交わらない装置。
- 請求項1に記載の装置であって、前記プレートは、前記少なくとも3つの別個に制御可能な加熱素子を囲むハウジングの一部である装置。
- 請求項8に記載の装置であって、前記ハウジングは、前記スピンチャックが回転しても静止するように取り付けられる装置。
- 円板状物品を処理するための装置で用
いる加熱アセンブリであって、
共通フレームコネクタに取り付けられた少なくとも3つの別個に制御可能な加熱素子を備え、
前記少なくとも3つの別個に制御可能な加熱素子は、別個に制御可能な内側、中間、および、外側の加熱領域を規定するように入れ子構成で配置され、
前記加熱素子の各々は、前記加熱素子の各々が前記加熱アセンブリに外接する円の中心から異なる距離の領域に広がるような形状および配置の少なくとも一方を有し、
さらに、前記少なくとも3つの別個に制御可能な加熱素子を囲むハウジングを備え、
前記ハウジングは、その上側部分を形成するプレートを備え、前記プレートは、前記少なくとも3つの別個に制御可能な加熱素子によって放射された赤外線放射に対して透過性がある加熱アセンブリ。 - 請求項10に記載の加熱アセンブリであって、前記少なくとも3つの別個に制御可能な加熱素子の各々は、少なくとも1つの曲線部分および少なくとも2つの直線部分を備える加熱アセンブリ。
- 請求項11に記載の加熱アセンブリであって、隣接する加熱素子の前記曲線部分は同心円に沿って伸び、隣接する加熱素子の前記2つの直線部分は互いに平行である加熱アセンブリ。
- 請求項10に記載の加熱アセンブリであって、前記共通フレームコネクタは、前記少なくとも3つの別個に制御可能な加熱素子と同じ数の複数の電気コネクタを備え、それにより、前記少なくとも3つの別個に制御可能な加熱素子の各々に別個に電力供給するためのコントローラに前記少なくとも3つの別個に制御可能な加熱素子の各々を別個に接続することを可能にする加熱アセンブリ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/650,916 US9093482B2 (en) | 2012-10-12 | 2012-10-12 | Method and apparatus for liquid treatment of wafer shaped articles |
US13/650,916 | 2012-10-12 | ||
US13/932,926 US9748120B2 (en) | 2013-07-01 | 2013-07-01 | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
US13/932,926 | 2013-07-01 |
Publications (3)
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JP2014090168A JP2014090168A (ja) | 2014-05-15 |
JP2014090168A5 JP2014090168A5 (ja) | 2016-11-24 |
JP6351948B2 true JP6351948B2 (ja) | 2018-07-04 |
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JP2013213420A Active JP6351948B2 (ja) | 2012-10-12 | 2013-10-11 | 円板状物品の液体処理装置およびかかる装置で用いる加熱システム |
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JP (1) | JP6351948B2 (ja) |
KR (2) | KR20140047564A (ja) |
TW (1) | TWI602253B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101681183B1 (ko) | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
KR102069078B1 (ko) * | 2014-08-27 | 2020-01-23 | 주식회사 제우스 | 기판 처리장치 |
KR102082151B1 (ko) * | 2014-10-10 | 2020-02-27 | 주식회사 제우스 | 기판 처리용 히터장치 및 이를 구비한 기판 액처리 장치 |
CN106575618A (zh) * | 2014-10-10 | 2017-04-19 | 杰宜斯科技有限公司 | 基板处理用加热装置及具备此的基板液处理装置 |
KR102123563B1 (ko) * | 2014-10-20 | 2020-06-16 | 주식회사 제우스 | 기판지지장치 및 이를 구비한 기판 액처리 장치 |
JP6658195B2 (ja) * | 2016-03-28 | 2020-03-04 | 大日本印刷株式会社 | エッチング方法およびエッチング装置 |
EP3442016B1 (en) * | 2016-05-26 | 2023-06-07 | Mimasu Semiconductor Industry Co., Ltd. | Wafer heating and holding device and method for rotary table, and wafer rotating and holding device |
US10720343B2 (en) * | 2016-05-31 | 2020-07-21 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
KR102263006B1 (ko) | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
KR102407266B1 (ko) | 2019-10-02 | 2022-06-13 | 세메스 주식회사 | 지지 유닛, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
CN111403316A (zh) * | 2020-03-18 | 2020-07-10 | 沈阳拓荆科技有限公司 | 一种提高硅片温度均匀性的加热系统 |
KR102564838B1 (ko) | 2020-07-24 | 2023-08-10 | 세메스 주식회사 | 지지 유닛, 이를 포함하는 기판 처리 장치 |
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JP2000164555A (ja) * | 1998-11-30 | 2000-06-16 | Ebara Corp | 基板乾燥装置及び方法 |
JP3659863B2 (ja) * | 2000-04-06 | 2005-06-15 | 大日本スクリーン製造株式会社 | 熱処理装置 |
TW563196B (en) * | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
JP2005032933A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4428717B2 (ja) * | 2006-11-14 | 2010-03-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
JP4548735B2 (ja) * | 2006-11-14 | 2010-09-22 | 東京エレクトロン株式会社 | 基板処理システム |
-
2013
- 2013-10-11 JP JP2013213420A patent/JP6351948B2/ja active Active
- 2013-10-11 TW TW102136810A patent/TWI602253B/zh active
- 2013-10-14 KR KR1020130122274A patent/KR20140047564A/ko active Application Filing
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2021
- 2021-04-21 KR KR1020210051917A patent/KR20210049738A/ko not_active Application Discontinuation
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KR20210049738A (ko) | 2021-05-06 |
KR20140047564A (ko) | 2014-04-22 |
JP2014090168A (ja) | 2014-05-15 |
TWI602253B (zh) | 2017-10-11 |
TW201434101A (zh) | 2014-09-01 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |