JP2014090168A - 円板状物品の液体処理装置およびかかる装置で用いる加熱システム - Google Patents
円板状物品の液体処理装置およびかかる装置で用いる加熱システム Download PDFInfo
- Publication number
- JP2014090168A JP2014090168A JP2013213420A JP2013213420A JP2014090168A JP 2014090168 A JP2014090168 A JP 2014090168A JP 2013213420 A JP2013213420 A JP 2013213420A JP 2013213420 A JP2013213420 A JP 2013213420A JP 2014090168 A JP2014090168 A JP 2014090168A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- radiating portion
- heating
- shaped
- heating elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 160
- 239000007788 liquid Substances 0.000 title description 12
- 230000005855 radiation Effects 0.000 claims description 13
- 235000002597 Solanum melongena Nutrition 0.000 claims 2
- 244000061458 Solanum melongena Species 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 31
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Resistance Heating (AREA)
Abstract
【解決手段】スピンチャック10と、少なくとも3つの別個に制御可能な赤外線加熱素子21,23,25とを備える。赤外線加熱素子は、スピンチャックが回転しても静止するように取り付けられる。赤外線加熱素子は、スピンチャック上に載置された円板状物品に隣接する別個に制御可能な内側、中間、および、外側の加熱領域を規定するように入れ子構成で配置される。
【選択図】図1
Description
Claims (33)
- 円板状物品を処理するための装置であって、
スピンチャックの上面に対して所定の向きに前記円板状物品を保持するためのスピンチャックと、
前記スピンチャックの前記上面の上方、かつ、前記スピンチャック上に載置された前記円板状物品の下方に位置する少なくとも3つの別個に制御可能な赤外線加熱素子と
を備え、
前記赤外線加熱素子は、前記スピンチャックが回転しても静止するように取り付けられ、
前記少なくとも3つの別個に制御可能な赤外線加熱素子は、前記スピンチャック上に載置された前記円板状物品に隣接する別個に制御可能な内側、中間、および、外側の加熱領域を規定するように入れ子構成で配置される装置。 - 請求項1に記載の装置であって、前記加熱素子の各々は、前記加熱素子の各々が前記スピンチャックの回転軸から異なる距離の領域を加熱するような形状および配置の少なくとも一方を有する装置。
- 請求項2に記載の装置であって、前記加熱素子の各々は、実質的に前記スピンチャックの回転軸から偏心した円の円弧に沿って伸びる曲線部分を備える装置。
- 請求項1に記載の装置であって、前記加熱素子の各々は、曲線部分によって相互接続された2つの直線部分を備える装置。
- 請求項1に記載の装置であって、前記2つの直線部分は互いに平行である装置。
- 請求項1に記載の装置であって、前記加熱素子の各々は、円の円弧に沿って伸びる曲線部分を備え、各加熱素子の前記円は、前記加熱素子の内の少なくとも他の2つの前記円と同心である装置。
- 請求項1に記載の装置であって、前記少なくとも3つの別個に制御可能な赤外線加熱素子の内のいずれの加熱素子の放射部分に外接する円も、前記少なくとも3つの別個に制御可能な赤外線加熱素子の内の他の加熱素子の放射部分に外接する円と交わらない装置。
- 請求項1に記載の装置であって、さらに、前記少なくとも3つの別個に制御可能な赤外線加熱素子によって放射された赤外線放射に対して透過性のあるプレートを備え、
前記プレートは、前記少なくとも3つの別個に制御可能な赤外線加熱素子と、前記スピンチャック上に載置された円板状物品との間に位置する装置。 - 請求項8に記載の装置であって、前記プレートは、前記少なくとも3つの別個に制御可能な赤外線加熱素子を囲むハウジングの一部である装置。
- 請求項9に記載の装置であって、前記ハウジングは、前記スピンチャックが回転しても静止するように取り付けられる装置。
- 円板状物品を処理するための装置で用いる赤外線加熱アセンブリであって、
共通フレームコネクタに取り付けられた少なくとも3つの別個に制御可能な赤外線加熱素子を備え、
前記少なくとも3つの別個に制御可能な赤外線加熱素子は、別個に制御可能な内側、中間、および、外側の加熱領域を規定するように入れ子構成で配置され、
前記加熱素子の各々は、前記加熱素子の各々が前記赤外線加熱アセンブリに外接する円の中心から異なる距離の領域に広がるような形状および配置の少なくとも一方を有する赤外線加熱アセンブリ。 - 請求項11に記載の赤外線加熱アセンブリであって、前記少なくとも3つの別個に制御可能な赤外線加熱素子の各々は、少なくとも1つの曲線部分および少なくとも2つの直線部分を備える赤外線加熱アセンブリ。
- 請求項12に記載の赤外線加熱アセンブリであって、隣接する赤外線加熱素子の前記曲線部分は同心円に沿って伸び、隣接する加熱素子の前記直線部分は互いに平行である赤外線アセンブリ。
- 請求項11に記載の赤外線加熱アセンブリであって、前記共通フレームコネクタは、前記少なくとも3つの別個に制御可能な赤外線加熱素子と同じ数の複数の電気コネクタを備え、それにより、前記少なくとも3つの別個に制御可能な赤外線加熱素子の各々に別個に電力供給するためのコントローラに前記少なくとも3つの別個に制御可能な赤外線加熱素子の各々を別個に接続することを可能にする赤外線加熱アセンブリ。
- 請求項11に記載の赤外線加熱アセンブリであって、さらに、前記少なくとも3つの別個に制御可能な赤外線加熱素子を囲むハウジングを備え、
前記ハウジングは、その上側部分を形成するプレートを備え、前記プレートは、前記少なくとも3つの別個に制御可能な赤外線加熱素子によって放射された赤外線放射に対して透過性がある赤外線加熱アセンブリ。 - 円板状ワークピースの加熱に用いる赤外線ランプであって、前記赤外線ランプは、前記赤外線ランプおよび前記円板状ワークピースが互いに相対的に回転する間に、前記円板状ワークピース上に光を放射して、前記円板状ワークピースを加熱し、前記赤外線ランプは、
前記円板状ワークピースの回転軸から偏心した円を概して描く円弧状放射部と、
前記円の内側に配置されると共に前記円の弦に概して沿って前記円弧状放射部から伸びる隣接放射部と
を備える赤外線ランプ。 - 請求項16に記載の赤外線ランプであって、前記隣接放射部は直線形状を有するランプ。
- 請求項16に記載の赤外線ランプであって、さらに、前記円弧状放射部の反対側の前記隣接放射部の端部に第2の円弧状放射部を備える赤外線ランプ。
- 請求項17に記載の赤外線ランプであって、さらに、前記円弧状放射部の反対側の前記隣接放射部の端部に第2の円弧状放射部を備える赤外線ランプ。
- 請求項16に記載の赤外線ランプであって、前記隣接放射部は、前記円弧状放射部の端部に一体的に結合されている赤外線ランプ。
- 請求項17に記載の赤外線ランプであって、前記隣接放射部は、前記円弧状放射部の端部に一体的に結合されている赤外線ランプ。
- 請求項19に記載の赤外線ランプであって、前記円弧状放射部および前記隣接放射部は一体的に形成され、各々の断面は円形である赤外線ランプ。
- 請求項20に記載の赤外線ランプであって、前記円弧状放射部および前記隣接放射部は一体的に形成され、各々の断面は円形である赤外線ランプ。
- 円板状ワークピースに対向して配置された赤外線ランプを備える加熱装置であって、前記加熱装置は、前記赤外線ランプおよび前記円板状ワークピースが互いに相対的に回転する間に、前記赤外線ランプが前記円板状ワークピース上に光を放射することによって、前記円板状ワークピースを加熱し、前記赤外線ランプは、前記円板状ワークピースの回転軸から偏心した円を概して描く円弧状放射部と、前記円の内側に配置されると共に前記円の弦に概して沿って前記円弧状放射部から伸びる隣接放射部とを備え、
前記加熱装置は、複数の前記赤外線ランプを備え、前記赤外線ランプの前記円弧状放射部は、互いに同心に配置されている加熱装置。 - 請求項24に記載の加熱装置であって、前記赤外線ランプの各々の前記隣接放射部は、内側に位置する赤外線ランプの前記円弧状放射部に外接する円と交わらない加熱装置。
- 請求項24に記載の加熱装置であって、前記赤外線ランプは、さらに、前記円弧状放射部の反対側の前記隣接放射部の端部に第2の円弧状放射部を備える加熱装置。
- 請求項25に記載の加熱装置であって、前記赤外線ランプは、さらに、前記円弧状放射部の反対側の前記隣接放射部の端部に第2の円弧状放射部を備える加熱装置。
- 請求項26に記載の加熱装置であって、前記円弧状放射部および前記第2の円弧状放射部の端部は、頂点が前記円板状ワークピースの回転軸上に位置するような角度をなす加熱装置。
- 請求項27に記載の加熱装置であって、前記円弧状放射部および前記第2の円弧状放射部の端部は、頂点が前記円板状ワークピースの回転軸上に位置するような角度をなす加熱装置。
- 請求項24に記載の加熱装置であって、前記赤外線ランプの各々の前記隣接放射部は、対応する前記円弧状放射部の端部に一体的に結合されている加熱装置。
- 請求項25に記載の加熱装置であって、前記赤外線ランプの各々の前記隣接放射部は、対応する前記円弧状放射部の端部に一体的に結合されている加熱装置。
- 請求項30に記載の加熱装置であって、前記赤外線ランプの各々の前記隣接放射部は、対応する前記円弧状放射部によって描かれる前記円の外側に伸びない加熱装置。
- 請求項31に記載の加熱装置であって、前記赤外線ランプの各々の前記隣接放射部は、対応する前記円弧状放射部によって描かれる前記円の外側に伸びない加熱装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/650,916 US9093482B2 (en) | 2012-10-12 | 2012-10-12 | Method and apparatus for liquid treatment of wafer shaped articles |
US13/650,916 | 2012-10-12 | ||
US13/932,926 US9748120B2 (en) | 2013-07-01 | 2013-07-01 | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
US13/932,926 | 2013-07-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014090168A true JP2014090168A (ja) | 2014-05-15 |
JP2014090168A5 JP2014090168A5 (ja) | 2016-11-24 |
JP6351948B2 JP6351948B2 (ja) | 2018-07-04 |
Family
ID=50654094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013213420A Active JP6351948B2 (ja) | 2012-10-12 | 2013-10-11 | 円板状物品の液体処理装置およびかかる装置で用いる加熱システム |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6351948B2 (ja) |
KR (2) | KR20140047564A (ja) |
TW (1) | TWI602253B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160025650A (ko) * | 2014-08-27 | 2016-03-09 | 주식회사 제우스 | 기판 처리장치 |
KR20160042688A (ko) * | 2014-10-10 | 2016-04-20 | 주식회사 제우스 | 기판 처리용 히터장치 및 이를 구비한 기판 액처리 장치 |
KR20160046140A (ko) * | 2014-10-20 | 2016-04-28 | 주식회사 제우스 | 기판지지장치 및 이를 구비한 기판 액처리 장치 |
JP2017524269A (ja) * | 2014-10-10 | 2017-08-24 | ゼウス カンパニー リミテッド | 基板処理用ヒーター装置及びこれを備えた基板液処理装置 |
JP2017183307A (ja) * | 2016-03-28 | 2017-10-05 | 大日本印刷株式会社 | エッチング方法およびエッチング装置 |
JP2017224807A (ja) * | 2016-05-31 | 2017-12-21 | ラム・リサーチ・アーゲーLam Research Ag | ウエハ形状の物品を処理するための方法および装置 |
JPWO2017204083A1 (ja) * | 2016-05-26 | 2019-03-14 | 三益半導体工業株式会社 | 回転テーブル用ウェーハ加熱保持機構及び方法並びにウェーハ回転保持装置 |
CN111403316A (zh) * | 2020-03-18 | 2020-07-10 | 沈阳拓荆科技有限公司 | 一种提高硅片温度均匀性的加热系统 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101681183B1 (ko) | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
KR102263006B1 (ko) | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
KR102407266B1 (ko) | 2019-10-02 | 2022-06-13 | 세메스 주식회사 | 지지 유닛, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
KR102564838B1 (ko) | 2020-07-24 | 2023-08-10 | 세메스 주식회사 | 지지 유닛, 이를 포함하는 기판 처리 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164555A (ja) * | 1998-11-30 | 2000-06-16 | Ebara Corp | 基板乾燥装置及び方法 |
JP2001291677A (ja) * | 2000-04-06 | 2001-10-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2005032933A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW563196B (en) * | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
JP4428717B2 (ja) * | 2006-11-14 | 2010-03-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
JP4548735B2 (ja) * | 2006-11-14 | 2010-09-22 | 東京エレクトロン株式会社 | 基板処理システム |
-
2013
- 2013-10-11 JP JP2013213420A patent/JP6351948B2/ja active Active
- 2013-10-11 TW TW102136810A patent/TWI602253B/zh active
- 2013-10-14 KR KR1020130122274A patent/KR20140047564A/ko active Application Filing
-
2021
- 2021-04-21 KR KR1020210051917A patent/KR20210049738A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164555A (ja) * | 1998-11-30 | 2000-06-16 | Ebara Corp | 基板乾燥装置及び方法 |
JP2001291677A (ja) * | 2000-04-06 | 2001-10-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2005032933A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160025650A (ko) * | 2014-08-27 | 2016-03-09 | 주식회사 제우스 | 기판 처리장치 |
KR102069078B1 (ko) * | 2014-08-27 | 2020-01-23 | 주식회사 제우스 | 기판 처리장치 |
KR20160042688A (ko) * | 2014-10-10 | 2016-04-20 | 주식회사 제우스 | 기판 처리용 히터장치 및 이를 구비한 기판 액처리 장치 |
JP2017524269A (ja) * | 2014-10-10 | 2017-08-24 | ゼウス カンパニー リミテッド | 基板処理用ヒーター装置及びこれを備えた基板液処理装置 |
KR102082151B1 (ko) * | 2014-10-10 | 2020-02-27 | 주식회사 제우스 | 기판 처리용 히터장치 및 이를 구비한 기판 액처리 장치 |
KR20160046140A (ko) * | 2014-10-20 | 2016-04-28 | 주식회사 제우스 | 기판지지장치 및 이를 구비한 기판 액처리 장치 |
KR102123563B1 (ko) * | 2014-10-20 | 2020-06-16 | 주식회사 제우스 | 기판지지장치 및 이를 구비한 기판 액처리 장치 |
JP2017183307A (ja) * | 2016-03-28 | 2017-10-05 | 大日本印刷株式会社 | エッチング方法およびエッチング装置 |
JPWO2017204083A1 (ja) * | 2016-05-26 | 2019-03-14 | 三益半導体工業株式会社 | 回転テーブル用ウェーハ加熱保持機構及び方法並びにウェーハ回転保持装置 |
US11056362B2 (en) | 2016-05-26 | 2021-07-06 | Mimasu Semiconductor Industry Co., Ltd. | Wafer heating and holding mechanism and method for rotary table, and wafer rotating and holding device |
JP2017224807A (ja) * | 2016-05-31 | 2017-12-21 | ラム・リサーチ・アーゲーLam Research Ag | ウエハ形状の物品を処理するための方法および装置 |
CN111403316A (zh) * | 2020-03-18 | 2020-07-10 | 沈阳拓荆科技有限公司 | 一种提高硅片温度均匀性的加热系统 |
Also Published As
Publication number | Publication date |
---|---|
KR20210049738A (ko) | 2021-05-06 |
KR20140047564A (ko) | 2014-04-22 |
JP6351948B2 (ja) | 2018-07-04 |
TWI602253B (zh) | 2017-10-11 |
TW201434101A (zh) | 2014-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6351948B2 (ja) | 円板状物品の液体処理装置およびかかる装置で用いる加熱システム | |
US9685358B2 (en) | Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus | |
KR102101139B1 (ko) | 웨이퍼 형상 물품들의 액체 처리를 위한 방법 및 장치 | |
US9748120B2 (en) | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus | |
US9093482B2 (en) | Method and apparatus for liquid treatment of wafer shaped articles | |
KR20170135714A (ko) | 웨이퍼 형상의 물품들을 프로세싱하기 위한 방법 및 장치 | |
JP6222817B2 (ja) | 基板処理方法および基板処理装置 | |
KR102096672B1 (ko) | 웨이퍼 형상 물품의 액체 처리를 위한 방법 및 장치 | |
KR102392259B1 (ko) | 에지 링을 포함한 스핀 척 | |
US8997764B2 (en) | Method and apparatus for liquid treatment of wafer shaped articles | |
US10312117B2 (en) | Apparatus and radiant heating plate for processing wafer-shaped articles | |
TW202221827A (zh) | 支撐單元及用於處理基板之設備 | |
KR20160042688A (ko) | 기판 처리용 히터장치 및 이를 구비한 기판 액처리 장치 | |
KR20200006801A (ko) | 기판처리장치 | |
TW202343531A (zh) | 蝕刻工具 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161003 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161003 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170829 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180515 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6351948 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |