KR102086170B9 - 기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체 - Google Patents
기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체Info
- Publication number
- KR102086170B9 KR102086170B9 KR20130126859A KR20130126859A KR102086170B9 KR 102086170 B9 KR102086170 B9 KR 102086170B9 KR 20130126859 A KR20130126859 A KR 20130126859A KR 20130126859 A KR20130126859 A KR 20130126859A KR 102086170 B9 KR102086170 B9 KR 102086170B9
- Authority
- KR
- South Korea
- Prior art keywords
- processing apparatus
- storage medium
- coating film
- peripheral portion
- removing coating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
- Materials For Photolithography (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-244310 | 2012-11-06 | ||
JP2012244310A JP5835188B2 (ja) | 2012-11-06 | 2012-11-06 | 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体 |
Publications (3)
Publication Number | Publication Date |
---|---|
KR20140058335A KR20140058335A (ko) | 2014-05-14 |
KR102086170B1 KR102086170B1 (ko) | 2020-05-27 |
KR102086170B9 true KR102086170B9 (ko) | 2021-10-15 |
Family
ID=50621404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130126859A KR102086170B1 (ko) | 2012-11-06 | 2013-10-24 | 기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140124479A1 (ko) |
JP (1) | JP5835188B2 (ko) |
KR (1) | KR102086170B1 (ko) |
TW (1) | TWI558469B (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6423672B2 (ja) * | 2014-09-26 | 2018-11-14 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6322840B2 (ja) | 2014-12-10 | 2018-05-16 | 東京エレクトロン株式会社 | レジスト膜除去方法、レジスト膜除去装置及び記憶媒体 |
JP6475071B2 (ja) * | 2015-04-24 | 2019-02-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6541491B2 (ja) * | 2015-07-29 | 2019-07-10 | 株式会社Screenホールディングス | 流下判定方法、流下判定装置および吐出装置 |
JP6880364B2 (ja) * | 2015-08-18 | 2021-06-02 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6475123B2 (ja) * | 2015-09-01 | 2019-02-27 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
KR101757815B1 (ko) * | 2015-09-25 | 2017-07-14 | 세메스 주식회사 | 기판 중심 검출 방법, 기판 반송 방법, 반송 유닛 및 이를 포함하는 기판 처리 장치. |
JP2017092306A (ja) * | 2015-11-12 | 2017-05-25 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6537992B2 (ja) | 2016-03-30 | 2019-07-03 | 東京エレクトロン株式会社 | 基板処理装置、基板処理装置の制御方法、及び基板処理システム |
JP6611652B2 (ja) * | 2016-03-30 | 2019-11-27 | 東京エレクトロン株式会社 | 基板処理装置の管理方法、及び基板処理システム |
JP6696306B2 (ja) | 2016-06-03 | 2020-05-20 | 東京エレクトロン株式会社 | 液処理方法、液処理装置及び記憶媒体 |
CN109314070B (zh) * | 2016-07-01 | 2022-10-18 | 卡本有限公司 | 用于旋涂多层薄膜的具有液体保存特征的方法和系统 |
JP6754247B2 (ja) * | 2016-08-25 | 2020-09-09 | 株式会社Screenホールディングス | 周縁部処理装置および周縁部処理方法 |
JP6815799B2 (ja) | 2016-09-13 | 2021-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2019021747A (ja) * | 2017-07-14 | 2019-02-07 | 東京エレクトロン株式会社 | 基板位置調整方法、記憶媒体及び基板処理システム |
JP2019096669A (ja) * | 2017-11-20 | 2019-06-20 | 東京エレクトロン株式会社 | 基板処理装置及び塗布モジュールのパラメータの調整方法並びに記憶媒体 |
JP7052573B2 (ja) * | 2018-06-06 | 2022-04-12 | 東京エレクトロン株式会社 | 塗布膜形成装置及び塗布膜形成装置の調整方法 |
KR102162187B1 (ko) | 2018-08-31 | 2020-10-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR102211781B1 (ko) * | 2018-11-23 | 2021-02-05 | 세메스 주식회사 | 기판 처리 장치, 편심 검사 장치 및 방법 |
KR20210130200A (ko) * | 2019-02-28 | 2021-10-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
JP7473407B2 (ja) | 2020-06-15 | 2024-04-23 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP7028285B2 (ja) * | 2020-07-13 | 2022-03-02 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP7407960B2 (ja) * | 2020-09-08 | 2024-01-04 | 東京エレクトロン株式会社 | 周縁処理装置、周縁処理方法及びコンピュータ読み取り可能な記録媒体 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4518678A (en) * | 1983-12-16 | 1985-05-21 | Advanced Micro Devices, Inc. | Selective removal of coating material on a coated substrate |
JP3549141B2 (ja) * | 1997-04-21 | 2004-08-04 | 大日本スクリーン製造株式会社 | 基板処理装置および基板保持装置 |
JP2001110712A (ja) * | 1999-10-12 | 2001-04-20 | Tokyo Electron Ltd | 塗布膜除去装置及び塗布膜除去方法 |
KR100488753B1 (ko) * | 2001-07-23 | 2005-05-11 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리방법 및 그 장치 |
JP3922062B2 (ja) * | 2002-03-22 | 2007-05-30 | ソニー株式会社 | 半導体装置の製造装置および半導体装置の製造方法 |
JP2006000748A (ja) * | 2004-06-17 | 2006-01-05 | Tokyo Ohka Kogyo Co Ltd | 基板端縁部被膜の除去装置 |
JP4502199B2 (ja) * | 2004-10-21 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | エッチング装置およびエッチング方法 |
JP4793927B2 (ja) * | 2005-11-24 | 2011-10-12 | 東京エレクトロン株式会社 | 基板処理方法及びその装置 |
JP2007240562A (ja) * | 2006-03-03 | 2007-09-20 | Fujifilm Corp | 光再生方法及び光再生装置 |
JP4708243B2 (ja) * | 2006-03-28 | 2011-06-22 | 東京エレクトロン株式会社 | 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体 |
JP2008218898A (ja) * | 2007-03-07 | 2008-09-18 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2011174757A (ja) * | 2010-02-23 | 2011-09-08 | Tokyo Electron Ltd | 欠陥検査方法、プログラム、コンピュータ記憶媒体及び欠陥検査装置 |
JP5572575B2 (ja) * | 2010-05-12 | 2014-08-13 | 東京エレクトロン株式会社 | 基板位置決め装置、基板処理装置、基板位置決め方法及びプログラムを記録した記憶媒体 |
-
2012
- 2012-11-06 JP JP2012244310A patent/JP5835188B2/ja active Active
-
2013
- 2013-10-24 KR KR1020130126859A patent/KR102086170B1/ko active IP Right Review Request
- 2013-10-30 TW TW102139307A patent/TWI558469B/zh active
- 2013-11-01 US US14/069,463 patent/US20140124479A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI558469B (zh) | 2016-11-21 |
KR20140058335A (ko) | 2014-05-14 |
JP5835188B2 (ja) | 2015-12-24 |
JP2014091105A (ja) | 2014-05-19 |
US20140124479A1 (en) | 2014-05-08 |
KR102086170B1 (ko) | 2020-05-27 |
TW201434542A (zh) | 2014-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
Z072 | Maintenance of patent after cancellation proceedings: certified copy of decision transmitted [new post grant opposition system as of 20170301] | ||
Z131 | Decision taken on request for patent cancellation [new post grant opposition system as of 20170301] |