KR102086170B9 - 기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체 - Google Patents

기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체

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Publication number
KR102086170B9
KR102086170B9 KR20130126859A KR20130126859A KR102086170B9 KR 102086170 B9 KR102086170 B9 KR 102086170B9 KR 20130126859 A KR20130126859 A KR 20130126859A KR 20130126859 A KR20130126859 A KR 20130126859A KR 102086170 B9 KR102086170 B9 KR 102086170B9
Authority
KR
South Korea
Prior art keywords
processing apparatus
storage medium
coating film
peripheral portion
removing coating
Prior art date
Application number
KR20130126859A
Other languages
English (en)
Other versions
KR20140058335A (ko
KR102086170B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50621404&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR102086170(B9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of KR20140058335A publication Critical patent/KR20140058335A/ko
Application granted granted Critical
Publication of KR102086170B1 publication Critical patent/KR102086170B1/ko
Publication of KR102086170B9 publication Critical patent/KR102086170B9/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
KR1020130126859A 2012-11-06 2013-10-24 기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체 KR102086170B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-244310 2012-11-06
JP2012244310A JP5835188B2 (ja) 2012-11-06 2012-11-06 基板周縁部の塗布膜除去方法、基板処理装置及び記憶媒体

Publications (3)

Publication Number Publication Date
KR20140058335A KR20140058335A (ko) 2014-05-14
KR102086170B1 KR102086170B1 (ko) 2020-05-27
KR102086170B9 true KR102086170B9 (ko) 2021-10-15

Family

ID=50621404

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130126859A KR102086170B1 (ko) 2012-11-06 2013-10-24 기판 주연부의 도포막 제거 방법, 기판 처리 장치 및 기억 매체

Country Status (4)

Country Link
US (1) US20140124479A1 (ko)
JP (1) JP5835188B2 (ko)
KR (1) KR102086170B1 (ko)
TW (1) TWI558469B (ko)

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* Cited by examiner, † Cited by third party
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JP6423672B2 (ja) * 2014-09-26 2018-11-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6322840B2 (ja) * 2014-12-10 2018-05-16 東京エレクトロン株式会社 レジスト膜除去方法、レジスト膜除去装置及び記憶媒体
JP6475071B2 (ja) * 2015-04-24 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6541491B2 (ja) * 2015-07-29 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 流下判定方法、流下判定装置および吐出装置
JP6880364B2 (ja) * 2015-08-18 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6475123B2 (ja) * 2015-09-01 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101757815B1 (ko) * 2015-09-25 2017-07-14 세메스 주식회사 기판 중심 검출 방법, 기판 반송 방법, 반송 유닛 및 이를 포함하는 기판 처리 장치.
JP2017092306A (ja) * 2015-11-12 2017-05-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6537992B2 (ja) 2016-03-30 2019-07-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の制御方法、及び基板処理システム
JP6611652B2 (ja) * 2016-03-30 2019-11-27 東京エレクトロン株式会社 基板処理装置の管理方法、及び基板処理システム
JP6696306B2 (ja) 2016-06-03 2020-05-20 東京エレクトロン株式会社 液処理方法、液処理装置及び記憶媒体
EP3424074B1 (en) * 2016-07-01 2021-10-27 Carbon, Inc. Method and system for spin-coating multi-layer thin films having liquid conservation features
JP6754247B2 (ja) 2016-08-25 2020-09-09 株式会社Ｓｃｒｅｅｎホールディングス 周縁部処理装置および周縁部処理方法
JP6815799B2 (ja) * 2016-09-13 2021-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2019021747A (ja) * 2017-07-14 2019-02-07 東京エレクトロン株式会社 基板位置調整方法、記憶媒体及び基板処理システム
JP2019096669A (ja) * 2017-11-20 2019-06-20 東京エレクトロン株式会社 基板処理装置及び塗布モジュールのパラメータの調整方法並びに記憶媒体
JP7052573B2 (ja) * 2018-06-06 2022-04-12 東京エレクトロン株式会社 塗布膜形成装置及び塗布膜形成装置の調整方法
KR102162187B1 (ko) 2018-08-31 2020-10-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102211781B1 (ko) * 2018-11-23 2021-02-05 세메스 주식회사 기판 처리 장치, 편심 검사 장치 및 방법
WO2020175194A1 (ja) * 2019-02-28 2020-09-03 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP7473407B2 (ja) 2020-06-15 2024-04-23 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7028285B2 (ja) * 2020-07-13 2022-03-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

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JP3549141B2 (ja) * 1997-04-21 2004-08-04 大日本スクリーン製造株式会社 基板処理装置および基板保持装置
JP2001110712A (ja) * 1999-10-12 2001-04-20 Tokyo Electron Ltd 塗布膜除去装置及び塗布膜除去方法
KR100488753B1 (ko) * 2001-07-23 2005-05-11 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 그 장치
JP3922062B2 (ja) * 2002-03-22 2007-05-30 ソニー株式会社 半導体装置の製造装置および半導体装置の製造方法
JP2006000748A (ja) * 2004-06-17 2006-01-05 Tokyo Ohka Kogyo Co Ltd 基板端縁部被膜の除去装置
JP4502199B2 (ja) * 2004-10-21 2010-07-14 ルネサスエレクトロニクス株式会社 エッチング装置およびエッチング方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
JP2007240562A (ja) * 2006-03-03 2007-09-20 Fujifilm Corp 光再生方法及び光再生装置
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
JP2011174757A (ja) * 2010-02-23 2011-09-08 Tokyo Electron Ltd 欠陥検査方法、プログラム、コンピュータ記憶媒体及び欠陥検査装置
JP5572575B2 (ja) * 2010-05-12 2014-08-13 東京エレクトロン株式会社 基板位置決め装置、基板処理装置、基板位置決め方法及びプログラムを記録した記憶媒体

Also Published As

Publication number Publication date
JP2014091105A (ja) 2014-05-19
KR20140058335A (ko) 2014-05-14
TW201434542A (zh) 2014-09-16
TWI558469B (zh) 2016-11-21
JP5835188B2 (ja) 2015-12-24
US20140124479A1 (en) 2014-05-08
KR102086170B1 (ko) 2020-05-27

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