KR101983855B1 - 기억 소자, 기억 장치 - Google Patents

기억 소자, 기억 장치 Download PDF

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Publication number
KR101983855B1
KR101983855B1 KR1020120050309A KR20120050309A KR101983855B1 KR 101983855 B1 KR101983855 B1 KR 101983855B1 KR 1020120050309 A KR1020120050309 A KR 1020120050309A KR 20120050309 A KR20120050309 A KR 20120050309A KR 101983855 B1 KR101983855 B1 KR 101983855B1
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South Korea
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layer
magnetization
storage
film
magnetic coupling
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Korean (ko)
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KR20120129772A (ko
Inventor
히로유키 오모리
마사노리 호소미
카즈히로 벳쇼
유타카 히고
카즈타카 야마네
히로유키 우치다
테츠야 아사야마
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소니 주식회사
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Publication of KR20120129772A publication Critical patent/KR20120129772A/ko
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Publication of KR101983855B1 publication Critical patent/KR101983855B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing
    • Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020120050309A 2011-05-19 2012-05-11 기억 소자, 기억 장치 Active KR101983855B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120050309A KR101983855B1 (ko) 2011-05-19 2012-05-11 기억 소자, 기억 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011112219A JP5768494B2 (ja) 2011-05-19 2011-05-19 記憶素子、記憶装置
JPJP-P-2011-112219 2011-05-19
KR1020120050309A KR101983855B1 (ko) 2011-05-19 2012-05-11 기억 소자, 기억 장치

Publications (2)

Publication Number Publication Date
KR20120129772A KR20120129772A (ko) 2012-11-28
KR101983855B1 true KR101983855B1 (ko) 2019-05-29

Family

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KR1020120050309A Active KR101983855B1 (ko) 2011-05-19 2012-05-11 기억 소자, 기억 장치

Country Status (5)

Country Link
US (3) US8923037B2 (https=)
JP (1) JP5768494B2 (https=)
KR (1) KR101983855B1 (https=)
CN (2) CN102790171B (https=)
TW (2) TWI514637B (https=)

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JP2012182217A (ja) 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
JP5824907B2 (ja) * 2011-06-24 2015-12-02 富士通株式会社 磁気抵抗素子及び磁気記憶装置
JP5728311B2 (ja) * 2011-07-04 2015-06-03 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
US9837602B2 (en) 2015-12-16 2017-12-05 Western Digital Technologies, Inc. Spin-orbit torque bit design for improved switching efficiency
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
JPWO2017169291A1 (ja) * 2016-03-30 2019-02-07 ソニー株式会社 磁気抵抗素子、メモリ素子及び電子機器
EP3442030B1 (en) * 2017-02-27 2021-04-07 TDK Corporation Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same

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JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003152240A (ja) 2001-11-13 2003-05-23 Hitachi Ltd 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置
DE10214159B4 (de) * 2002-03-28 2008-03-20 Qimonda Ag Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen
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WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
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Also Published As

Publication number Publication date
CN105825882A (zh) 2016-08-03
JP5768494B2 (ja) 2015-08-26
TWI467703B (zh) 2015-01-01
JP2012243933A (ja) 2012-12-10
US9257635B2 (en) 2016-02-09
CN102790171B (zh) 2016-06-29
US20120294079A1 (en) 2012-11-22
US20150295169A1 (en) 2015-10-15
US9099642B2 (en) 2015-08-04
US20150137288A1 (en) 2015-05-21
TW201248788A (en) 2012-12-01
KR20120129772A (ko) 2012-11-28
TW201519484A (zh) 2015-05-16
CN102790171A (zh) 2012-11-21
TWI514637B (zh) 2015-12-21
CN105825882B (zh) 2018-06-12
US8923037B2 (en) 2014-12-30

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