KR101983077B1 - 기억 소자의 제조 방법 - Google Patents

기억 소자의 제조 방법 Download PDF

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Publication number
KR101983077B1
KR101983077B1 KR1020120051402A KR20120051402A KR101983077B1 KR 101983077 B1 KR101983077 B1 KR 101983077B1 KR 1020120051402 A KR1020120051402 A KR 1020120051402A KR 20120051402 A KR20120051402 A KR 20120051402A KR 101983077 B1 KR101983077 B1 KR 101983077B1
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South Korea
Prior art keywords
layer
magnetization
storage layer
storage
current
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Expired - Fee Related
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KR1020120051402A
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English (en)
Korean (ko)
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KR20120130702A (ko
Inventor
유타카 히고
마사노리 호소미
히로유키 오모리
카즈히로 벳쇼
테츠야 아사야마
카즈타카 야마네
히로유키 우치다
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소니 주식회사
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Priority to KR1020120051402A priority Critical patent/KR101983077B1/ko
Publication of KR20120130702A publication Critical patent/KR20120130702A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020120051402A 2011-05-23 2012-05-15 기억 소자의 제조 방법 Expired - Fee Related KR101983077B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120051402A KR101983077B1 (ko) 2011-05-23 2012-05-15 기억 소자의 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-114439 2011-05-23
JP2011114439A JP5796349B2 (ja) 2011-05-23 2011-05-23 記憶素子の製造方法
KR1020120051402A KR101983077B1 (ko) 2011-05-23 2012-05-15 기억 소자의 제조 방법

Publications (2)

Publication Number Publication Date
KR20120130702A KR20120130702A (ko) 2012-12-03
KR101983077B1 true KR101983077B1 (ko) 2019-05-29

Family

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Family Applications (1)

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KR1020120051402A Expired - Fee Related KR101983077B1 (ko) 2011-05-23 2012-05-15 기억 소자의 제조 방법

Country Status (5)

Country Link
US (1) US8625342B2 (enExample)
JP (1) JP5796349B2 (enExample)
KR (1) KR101983077B1 (enExample)
CN (1) CN102800804B (enExample)
TW (1) TWI473088B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9450177B2 (en) 2010-03-10 2016-09-20 Tohoku University Magnetoresistive element and magnetic memory
JP5725735B2 (ja) 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
US8796797B2 (en) 2012-12-21 2014-08-05 Intel Corporation Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
CN103794224B (zh) * 2014-01-27 2017-01-11 华中科技大学 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法
CN106030840B (zh) * 2014-03-25 2019-03-01 英特尔公司 磁畴壁逻辑器件及互连
KR20170037707A (ko) * 2015-09-25 2017-04-05 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US10439130B2 (en) * 2016-10-27 2019-10-08 Tdk Corporation Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
JP6832818B2 (ja) * 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
US12364164B2 (en) 2022-12-10 2025-07-15 International Business Machines Corporation Reactive serial resistance reduction for magnetoresistive random-access memory devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136313A1 (en) * 2008-05-06 2009-11-12 Commissariat A L'energie Atomique Heat assisted magnetic write element
JP2010021580A (ja) * 2005-10-19 2010-01-28 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード、電子装置、磁気抵抗効果素子の製造方法、及び、磁気ランダムアクセスメモリの製造方法

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US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP3667244B2 (ja) * 2001-03-19 2005-07-06 キヤノン株式会社 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
KR100468861B1 (ko) * 2003-01-07 2005-01-29 삼성전자주식회사 고선택성을 가지는 자기저항 메모리
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
JP4550552B2 (ja) * 2004-11-02 2010-09-22 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
FR2910716B1 (fr) * 2006-12-26 2010-03-26 Commissariat Energie Atomique Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ

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JP2010021580A (ja) * 2005-10-19 2010-01-28 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード、電子装置、磁気抵抗効果素子の製造方法、及び、磁気ランダムアクセスメモリの製造方法
WO2009136313A1 (en) * 2008-05-06 2009-11-12 Commissariat A L'energie Atomique Heat assisted magnetic write element

Also Published As

Publication number Publication date
JP5796349B2 (ja) 2015-10-21
TW201248626A (en) 2012-12-01
CN102800804B (zh) 2017-01-18
TWI473088B (zh) 2015-02-11
JP2012244030A (ja) 2012-12-10
US8625342B2 (en) 2014-01-07
CN102800804A (zh) 2012-11-28
KR20120130702A (ko) 2012-12-03
US20120300541A1 (en) 2012-11-29

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