TWI473088B - Memory elements and memory devices - Google Patents

Memory elements and memory devices Download PDF

Info

Publication number
TWI473088B
TWI473088B TW101111174A TW101111174A TWI473088B TW I473088 B TWI473088 B TW I473088B TW 101111174 A TW101111174 A TW 101111174A TW 101111174 A TW101111174 A TW 101111174A TW I473088 B TWI473088 B TW I473088B
Authority
TW
Taiwan
Prior art keywords
layer
memory
magnetization
memory element
memory layer
Prior art date
Application number
TW101111174A
Other languages
English (en)
Chinese (zh)
Other versions
TW201248626A (en
Inventor
肥後豊
細見政功
大森廣之
別所和宏
淺山徹哉
山根一陽
內田裕行
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201248626A publication Critical patent/TW201248626A/zh
Application granted granted Critical
Publication of TWI473088B publication Critical patent/TWI473088B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW101111174A 2011-05-23 2012-03-29 Memory elements and memory devices TWI473088B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011114439A JP5796349B2 (ja) 2011-05-23 2011-05-23 記憶素子の製造方法

Publications (2)

Publication Number Publication Date
TW201248626A TW201248626A (en) 2012-12-01
TWI473088B true TWI473088B (zh) 2015-02-11

Family

ID=47199844

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101111174A TWI473088B (zh) 2011-05-23 2012-03-29 Memory elements and memory devices

Country Status (5)

Country Link
US (1) US8625342B2 (enExample)
JP (1) JP5796349B2 (enExample)
KR (1) KR101983077B1 (enExample)
CN (1) CN102800804B (enExample)
TW (1) TWI473088B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011111473A1 (ja) 2010-03-10 2011-09-15 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5725735B2 (ja) 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
US8796797B2 (en) * 2012-12-21 2014-08-05 Intel Corporation Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
CN103794224B (zh) * 2014-01-27 2017-01-11 华中科技大学 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法
EP3123537A4 (en) * 2014-03-25 2018-02-14 Intel Corporation Magnetic domain wall logic devices and interconnect
KR20170037707A (ko) * 2015-09-25 2017-04-05 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US10439130B2 (en) * 2016-10-27 2019-10-08 Tdk Corporation Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
JP6832818B2 (ja) * 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
US12364164B2 (en) * 2022-12-10 2025-07-15 International Business Machines Corporation Reactive serial resistance reduction for magnetoresistive random-access memory devices

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060262594A1 (en) * 2005-05-19 2006-11-23 Nec Corporation Magnetoresistive device and magnetic memory using the same
US20070030724A1 (en) * 2005-08-05 2007-02-08 Masanori Hosomi Memory element and memory
US7193890B2 (en) * 2004-11-02 2007-03-20 Kabushiki Kaisha Toshiba Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
US20070076469A1 (en) * 2005-09-16 2007-04-05 Fujitsu Limited Magnetoresistive effect element and magnetic memory device
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US20070263429A1 (en) * 2006-05-12 2007-11-15 Sony Corporation Memory element and memory
US7596015B2 (en) * 2006-10-13 2009-09-29 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory
US20090285017A1 (en) * 2007-03-15 2009-11-19 Sony Corporation Memory device and memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP3667244B2 (ja) * 2001-03-19 2005-07-06 キヤノン株式会社 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
KR100468861B1 (ko) * 2003-01-07 2005-01-29 삼성전자주식회사 고선택성을 가지는 자기저항 메모리
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2008283207A (ja) * 2005-10-19 2008-11-20 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2007266498A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 磁気記録素子及び磁気メモリ
FR2910716B1 (fr) * 2006-12-26 2010-03-26 Commissariat Energie Atomique Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7193890B2 (en) * 2004-11-02 2007-03-20 Kabushiki Kaisha Toshiba Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
US20060262594A1 (en) * 2005-05-19 2006-11-23 Nec Corporation Magnetoresistive device and magnetic memory using the same
US20090219754A1 (en) * 2005-05-19 2009-09-03 Nec Corporation Magnetoresistive device and magnetic memory using the same
US20070030724A1 (en) * 2005-08-05 2007-02-08 Masanori Hosomi Memory element and memory
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US20070076469A1 (en) * 2005-09-16 2007-04-05 Fujitsu Limited Magnetoresistive effect element and magnetic memory device
US7382643B2 (en) * 2005-09-16 2008-06-03 Fujitsu Limited Magnetoresistive effect element and magnetic memory device
US20070263429A1 (en) * 2006-05-12 2007-11-15 Sony Corporation Memory element and memory
US7596015B2 (en) * 2006-10-13 2009-09-29 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory
US20090285017A1 (en) * 2007-03-15 2009-11-19 Sony Corporation Memory device and memory

Also Published As

Publication number Publication date
JP2012244030A (ja) 2012-12-10
CN102800804B (zh) 2017-01-18
KR20120130702A (ko) 2012-12-03
US8625342B2 (en) 2014-01-07
CN102800804A (zh) 2012-11-28
TW201248626A (en) 2012-12-01
JP5796349B2 (ja) 2015-10-21
US20120300541A1 (en) 2012-11-29
KR101983077B1 (ko) 2019-05-29

Similar Documents

Publication Publication Date Title
JP5867030B2 (ja) 記憶素子、記憶装置
TWI530945B (zh) Memory elements and memory devices
CN104241286B (zh) 存储元件、存储装置、制造存储元件的方法及磁头
CN106887247B (zh) 信息存储元件和存储装置
JP5796349B2 (ja) 記憶素子の製造方法
JP5987613B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP5782715B2 (ja) 記憶素子及び記憶装置
JP6194752B2 (ja) 記憶素子、記憶装置、磁気ヘッド
CN103137855B (zh) 存储元件和存储设备
JP2013115413A (ja) 記憶素子、記憶装置
JP2012235015A (ja) 記憶素子及び記憶装置
CN102403026A (zh) 存储元件和存储装置
JP2014072393A (ja) 記憶素子、記憶装置、磁気ヘッド
WO2013080436A1 (ja) 記憶素子、記憶装置
JP2013115399A (ja) 記憶素子、記憶装置
JP2013115412A (ja) 記憶素子、記憶装置
CN106935256B (zh) 自旋力矩磁随机存取存储器元件与磁阻效应型磁头
KR20120023560A (ko) 기억 소자 및 기억 장치
WO2013080437A1 (ja) 記憶素子、記憶装置
JP2017212464A (ja) 記憶素子、記憶装置、磁気ヘッド
JP2012248811A (ja) 記憶素子及び記憶装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees