KR101943595B1 - 액티브 매트릭스 감쇄 소스 인에이블형 수직 유기 발광 트랜지스터 - Google Patents

액티브 매트릭스 감쇄 소스 인에이블형 수직 유기 발광 트랜지스터 Download PDF

Info

Publication number
KR101943595B1
KR101943595B1 KR1020137017559A KR20137017559A KR101943595B1 KR 101943595 B1 KR101943595 B1 KR 101943595B1 KR 1020137017559 A KR1020137017559 A KR 1020137017559A KR 20137017559 A KR20137017559 A KR 20137017559A KR 101943595 B1 KR101943595 B1 KR 101943595B1
Authority
KR
South Korea
Prior art keywords
layer
display panel
vfet
source
delete delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137017559A
Other languages
English (en)
Korean (ko)
Other versions
KR20130130011A (ko
Inventor
앤드류 개브리엘 린즐러
미첼 오스틴 매카시
보 류
Original Assignee
유니버시티 오브 플로리다 리서치 파운데이션, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유니버시티 오브 플로리다 리서치 파운데이션, 인크. filed Critical 유니버시티 오브 플로리다 리서치 파운데이션, 인크.
Publication of KR20130130011A publication Critical patent/KR20130130011A/ko
Application granted granted Critical
Publication of KR101943595B1 publication Critical patent/KR101943595B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020137017559A 2010-12-07 2011-12-07 액티브 매트릭스 감쇄 소스 인에이블형 수직 유기 발광 트랜지스터 Active KR101943595B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42051210P 2010-12-07 2010-12-07
US61/420,512 2010-12-07
PCT/US2011/063745 WO2012078759A2 (en) 2010-12-07 2011-12-07 Active matrix dilute source enabled vertical organic light emitting transistor

Publications (2)

Publication Number Publication Date
KR20130130011A KR20130130011A (ko) 2013-11-29
KR101943595B1 true KR101943595B1 (ko) 2019-04-17

Family

ID=46207712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137017559A Active KR101943595B1 (ko) 2010-12-07 2011-12-07 액티브 매트릭스 감쇄 소스 인에이블형 수직 유기 발광 트랜지스터

Country Status (12)

Country Link
US (1) US9214644B2 (enExample)
EP (1) EP2649659B1 (enExample)
JP (1) JP6272030B2 (enExample)
KR (1) KR101943595B1 (enExample)
CN (2) CN103460424B (enExample)
AU (1) AU2011338460A1 (enExample)
BR (1) BR112013013873A2 (enExample)
CA (1) CA2820256A1 (enExample)
MX (1) MX2013006233A (enExample)
RU (1) RU2013131102A (enExample)
SG (1) SG190313A1 (enExample)
WO (1) WO2012078759A2 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412442B2 (en) * 2012-04-27 2016-08-09 The Board Of Trustees Of The University Of Illinois Methods for forming a nanowire and apparatus thereof
US8901547B2 (en) * 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors
US8653516B1 (en) * 2012-08-31 2014-02-18 Eastman Kodak Company High performance thin film transistor
TWI569491B (zh) * 2012-10-11 2017-02-01 Joled Inc Organic EL display device and manufacturing method thereof, ink and electronic machine
TWI467301B (zh) * 2012-10-24 2015-01-01 Au Optronics Corp 顯示面板
KR102084288B1 (ko) 2012-11-05 2020-03-03 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 디스플레이의 휘도 보상
EP2926376B1 (en) * 2012-11-30 2017-11-08 University of Florida Research Foundation, Inc. Ambipolar vertical field effect transistor
US9373685B2 (en) * 2013-02-15 2016-06-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
KR102081891B1 (ko) * 2013-02-15 2020-02-26 삼성전자주식회사 그래핀 소자 및 이를 포함하는 전자 기기
US8975121B2 (en) * 2013-05-09 2015-03-10 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form thin film nanocrystal integrated circuits on ophthalmic devices
CN104576744A (zh) * 2013-10-24 2015-04-29 中国科学院苏州纳米技术与纳米仿生研究所 碳纳米管薄膜晶体管、amoled像素柔性驱动电路及制作方法
GB201321285D0 (en) * 2013-12-03 2014-01-15 Plastic Logic Ltd Pixel driver circuit
IL229837A0 (en) 2013-12-08 2014-03-31 Technion Res & Dev Foundation Electronic device
US10553711B2 (en) 2014-04-24 2020-02-04 University Of Florida Research Foundation, Inc. Tunable barrier transistors for high power electronics
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
EP2978038A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6612236B2 (ja) * 2014-09-04 2019-11-27 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US9379166B2 (en) * 2014-11-04 2016-06-28 Atom Nanoelectronics, Inc. Active matrix light emitting diodes display module with carbon nanotubes control circuits and methods of fabrication
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
CN105679949A (zh) * 2014-12-04 2016-06-15 广州华睿光电材料有限公司 有机发光晶体管及其应用
CN108496240A (zh) 2015-09-11 2018-09-04 佛罗里达大学研究基金会有限公司 垂直场效应晶体管
US10483325B2 (en) 2015-09-11 2019-11-19 University Of Florida Research Foundation, Incorporated Light emitting phototransistor
CN105304830A (zh) * 2015-10-09 2016-02-03 Tcl集团股份有限公司 量子点发光场效应晶体管及其制备方法
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
KR101730902B1 (ko) * 2015-10-19 2017-04-27 서울대학교산학협력단 누설 전류가 저감된 수직형 유기 발광 트랜지스터 및 이의 제조 방법
WO2017112932A1 (en) * 2015-12-23 2017-06-29 University Of Florida Research Foundation, Incorporated Patterning and inverted deposition engineering for solution-processed electrodes and semiconducting films
KR20170129983A (ko) 2016-05-17 2017-11-28 삼성전자주식회사 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법
CN106684251B (zh) * 2016-12-09 2018-06-01 武汉华星光电技术有限公司 柔性垂直沟道有机薄膜晶体管及其制作方法
RU175418U1 (ru) * 2016-12-12 2017-12-04 Российская Федерация, от имени которой выступает федеральное государственное казенное учреждение "Войсковая часть 68240" (ФГКУ "В/ч" 68240) Полевой транзистор на углеродной пленке с вертикальным каналом проводимости
CN107170748B (zh) * 2017-04-20 2019-11-08 上海天马微电子有限公司 一种阵列基板、显示面板及显示设备
JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN108731855B (zh) 2018-05-18 2019-07-26 京东方科技集团股份有限公司 一种压力传感单元及压力传感器、压力传感装置
CN108493229A (zh) * 2018-05-31 2018-09-04 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
JP7190729B2 (ja) * 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
KR102135503B1 (ko) 2018-09-06 2020-07-17 광운대학교 산학협력단 저차원 전자구조의 물질로 구성되는 전극을 사용하는 유기 트랜지스터 소자와 유기 발광 트랜지스터 소자 및 그 제조방법
CN109036283B (zh) * 2018-09-06 2020-06-09 京东方科技集团股份有限公司 有机发光场效应晶体管的驱动电路及驱动方法、显示装置
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
JP2020183971A (ja) * 2019-04-26 2020-11-12 Jsr株式会社 ディスプレイの点灯方法及びディスプレイ
KR102791452B1 (ko) * 2019-04-26 2025-04-08 제이에스알 가부시키가이샤 디스플레이의 휘도를 보상하는 방법 및 디스플레이
JP7565150B2 (ja) * 2019-04-26 2024-10-10 Jsr株式会社 ディスプレイの輝度補償方法及びディスプレイ
WO2020218420A1 (en) * 2019-04-26 2020-10-29 Jsr Corporation Method of driving a light emitting display and display
KR102825031B1 (ko) 2019-11-27 2025-06-24 삼성전자주식회사 표시 패널 및 표시 장치
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
KR20220137905A (ko) 2020-02-07 2022-10-12 제이에스알 가부시끼가이샤 디스플레이
JP7591196B2 (ja) * 2020-02-07 2024-11-28 Jsr株式会社 ディスプレイ
CN111863892B (zh) * 2020-07-13 2022-08-23 武汉华星光电半导体显示技术有限公司 显示装置及其制备方法
JP7367635B2 (ja) * 2020-08-21 2023-10-24 Jsr株式会社 ディスプレイ
CN116075877B (zh) * 2020-08-21 2025-02-14 Jsr株式会社 显示器
RU204091U1 (ru) * 2020-12-25 2021-05-06 Общество с ограниченной ответственностью "Сенсор Микрон" Полевой транзистор с вертикальным каналом для СВЧ - техники
TW202232461A (zh) 2021-02-03 2022-08-16 日商Ｊｓｒ股份有限公司 顯示器的製造方法及顯示器
CN115250638B (zh) * 2021-02-26 2025-03-28 京东方科技集团股份有限公司 发光晶体管及显示基板
CN113345967B (zh) * 2021-05-21 2022-09-09 Tcl华星光电技术有限公司 薄膜晶体管及led背板
CN116193903A (zh) * 2021-11-25 2023-05-30 京东方科技集团股份有限公司 有机发光晶体管及其制备方法、显示面板
US12477893B2 (en) 2021-12-14 2025-11-18 Beijing Boe Technology Development Co., Ltd. Light emitting transistor, manufacturing method thereof and display substrate
US20240431143A1 (en) * 2021-12-24 2024-12-26 Boe Technology Group Co., Ltd. Array substrate and display apparatus
US20230403918A1 (en) * 2022-06-09 2023-12-14 Jsr Corporation Method for producing vertical organic light-emitting transistor device, display
US20250194371A1 (en) * 2023-12-06 2025-06-12 Mattrix Technologies, Inc. Hybrid active-passive matrix devices for displays, lighting and signaling
CN119816176B (zh) * 2025-01-09 2025-10-28 福州大学 一种电流型双栅极调控单向节截流复合发光器件制备工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006301629A (ja) * 2005-04-16 2006-11-02 Samsung Electronics Co Ltd 単結晶シリコン薄膜トランジスタの有機発光ディスプレイ及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI107109B (fi) 1998-10-21 2001-05-31 Nokia Networks Oy Digitaalinen tietoliikennejärjestelmä
KR100379566B1 (ko) * 2000-08-30 2003-04-10 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP3638922B2 (ja) 2001-07-17 2005-04-13 株式会社半導体エネルギー研究所 発光装置
GB0130321D0 (en) * 2001-12-19 2002-02-06 Avecia Ltd Electronic devices
JP2003330412A (ja) 2002-05-10 2003-11-19 Canon Inc アクティブマトリックス型ディスプレイ及びスイッチ回路
US7002302B2 (en) * 2002-10-07 2006-02-21 Samsung Sdi Co., Ltd. Flat panel display
JP2005128310A (ja) * 2003-10-24 2005-05-19 Seiko Epson Corp 表示装置、及び電子機器
KR100603334B1 (ko) 2004-04-06 2006-07-20 삼성에스디아이 주식회사 능동형 유기 ｅｌ 픽셀
TWI489519B (zh) * 2004-04-28 2015-06-21 半導體能源研究所股份有限公司 基板上配線，半導體裝置及其製造方法
US7416924B2 (en) 2004-11-11 2008-08-26 Samsung Electronics Co., Ltd. Organic light emitting display with single crystalline silicon TFT and method of fabricating the same
KR100712111B1 (ko) 2004-12-14 2007-04-27 삼성에스디아이 주식회사 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법
EP2264690A1 (en) * 2005-05-02 2010-12-22 Semiconductor Energy Laboratory Co, Ltd. Display device and gray scale driving method with subframes thereof
JP4808479B2 (ja) * 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809682B2 (ja) * 2006-01-30 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
EP2204074B1 (en) * 2007-09-10 2019-11-06 University of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
TWI425693B (zh) 2008-03-14 2014-02-01 Univ Nat Chiao Tung Vertical drive and parallel drive organic light emitting crystal structure
TWI637444B (zh) * 2008-08-08 2018-10-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101097454B1 (ko) * 2009-02-16 2011-12-23 네오뷰코오롱 주식회사 Ｏｌｅｄ 패널의 화소 회로, 이를 이용한 표시 장치 및 ｏｌｅｄ 패널의 구동 방법
US9072887B2 (en) * 2009-05-20 2015-07-07 The Trustees Of The University Of Pennsylvania Self-adaptive bio-signal and modulation device
CN101615613B (zh) * 2009-08-12 2010-10-06 友达光电股份有限公司 像素结构、有机电激发光显示单元及其制造方法
KR20110058126A (ko) * 2009-11-25 2011-06-01 삼성모바일디스플레이주식회사 유기 발광 표시 장치
WO2011109693A2 (en) 2010-03-04 2011-09-09 University Of Florida Research Foundation Inc. Semiconductor devices including an electrically percolating source layer and methods of fabricating the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006301629A (ja) * 2005-04-16 2006-11-02 Samsung Electronics Co Ltd 単結晶シリコン薄膜トランジスタの有機発光ディスプレイ及びその製造方法

Also Published As

Publication number Publication date
CN103460424A (zh) 2013-12-18
JP2014505324A (ja) 2014-02-27
JP6272030B2 (ja) 2018-01-31
RU2013131102A (ru) 2015-01-20
US9214644B2 (en) 2015-12-15
SG190313A1 (en) 2013-06-28
EP2649659A4 (en) 2015-01-07
EP2649659A2 (en) 2013-10-16
CA2820256A1 (en) 2012-06-14
AU2011338460A1 (en) 2013-06-06
CN106887449B (zh) 2021-11-05
CN106887449A (zh) 2017-06-23
US20130240842A1 (en) 2013-09-19
CN103460424B (zh) 2016-10-26
WO2012078759A2 (en) 2012-06-14
BR112013013873A2 (pt) 2016-09-13
EP2649659B1 (en) 2020-05-06
KR20130130011A (ko) 2013-11-29
MX2013006233A (es) 2013-08-15
WO2012078759A3 (en) 2012-09-27

Similar Documents

Publication Publication Date Title
KR101943595B1 (ko) 액티브 매트릭스 감쇄 소스 인에이블형 수직 유기 발광 트랜지스터
KR101497744B1 (ko) 나노튜브 가능한, 게이트 전압이 제어된 발광 다이오드
US8289242B2 (en) Organic electroluminescence display device and manufacturing method thereof
Ju et al. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry
US8933450B2 (en) Organic electro-luminescent display device
CN111819707A (zh) 元件、电子设备以及元件的制造方法
TW200904235A (en) Luminescent device and method of manufacturing the same
CN102017211B (zh) 有机薄膜晶体管
Ganesan et al. En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review
CN113299840A (zh) 利用可伸缩发光材料的有机电致发光器件及其制造方法
US20240090262A1 (en) Manufacturing method of display and display
US20060255336A1 (en) Thin film transistor and method of manufacturing the same
Park et al. Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies
WO2012077573A1 (ja) 電極構成、当該電極構成を備えた有機薄膜トランジスタとその製造方法、当該有機薄膜トランジスタを備えた有機エレクトロルミネッセンス画素、および、有機エレクトロルミネッセンス素子、当該有機エレクトロルミネッセンス素子を備えた装置、並びに、有機太陽電池
KR100794570B1 (ko) 세로형 유기 박막 트랜지스터 및 이의 제조방법
JP7591196B2 (ja) ディスプレイ
JP2012144456A (ja) 有機薄膜、有機薄膜の製造方法、電界効果トランジスタ、有機発光素子、太陽電池、表示装置用アレイ及び表示装置
CN116761486A (zh) 一种石墨烯像素电极限域载流子传输及其柔性有源矩阵发光二极管的制备方法
WO2014006700A1 (ja) 有機薄膜の製造方法
US20090146136A1 (en) Organic memory device and method of fabricating the same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000