MX2013006233A - Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa. - Google Patents
Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa.Info
- Publication number
- MX2013006233A MX2013006233A MX2013006233A MX2013006233A MX2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A MX 2013006233 A MX2013006233 A MX 2013006233A
- Authority
- MX
- Mexico
- Prior art keywords
- enabled
- transistor
- source
- vfet
- field effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
- H10D62/882—Graphene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42051210P | 2010-12-07 | 2010-12-07 | |
| PCT/US2011/063745 WO2012078759A2 (en) | 2010-12-07 | 2011-12-07 | Active matrix dilute source enabled vertical organic light emitting transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2013006233A true MX2013006233A (es) | 2013-08-15 |
Family
ID=46207712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2013006233A MX2013006233A (es) | 2010-12-07 | 2011-12-07 | Transistor emisor de luz organico vertical habilitado con fuente diluida de matriz activa. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US9214644B2 (enExample) |
| EP (1) | EP2649659B1 (enExample) |
| JP (1) | JP6272030B2 (enExample) |
| KR (1) | KR101943595B1 (enExample) |
| CN (2) | CN103460424B (enExample) |
| AU (1) | AU2011338460A1 (enExample) |
| BR (1) | BR112013013873A2 (enExample) |
| CA (1) | CA2820256A1 (enExample) |
| MX (1) | MX2013006233A (enExample) |
| RU (1) | RU2013131102A (enExample) |
| SG (1) | SG190313A1 (enExample) |
| WO (1) | WO2012078759A2 (enExample) |
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| TWI569491B (zh) * | 2012-10-11 | 2017-02-01 | 杰奧萊德股份有限公司 | Organic EL display device and manufacturing method thereof, ink and electronic machine |
| TWI467301B (zh) * | 2012-10-24 | 2015-01-01 | 友達光電股份有限公司 | 顯示面板 |
| WO2014071343A1 (en) | 2012-11-05 | 2014-05-08 | University Of Florida Research Foundation, Inc. | Brightness compensation in a display |
| KR102010113B1 (ko) * | 2012-11-30 | 2019-08-12 | 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. | 양극성 수직 전계 효과 트랜지스터 |
| KR102081891B1 (ko) * | 2013-02-15 | 2020-02-26 | 삼성전자주식회사 | 그래핀 소자 및 이를 포함하는 전자 기기 |
| US9373685B2 (en) * | 2013-02-15 | 2016-06-21 | Samsung Electronics Co., Ltd. | Graphene device and electronic apparatus |
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| CN104576744A (zh) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 碳纳米管薄膜晶体管、amoled像素柔性驱动电路及制作方法 |
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| EP2978038A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
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| JP7246681B2 (ja) | 2018-09-26 | 2023-03-28 | 三国電子有限会社 | トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置 |
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| FI107109B (fi) | 1998-10-21 | 2001-05-31 | Nokia Networks Oy | Digitaalinen tietoliikennejärjestelmä |
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| CN101615613B (zh) * | 2009-08-12 | 2010-10-06 | 友达光电股份有限公司 | 像素结构、有机电激发光显示单元及其制造方法 |
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-
2011
- 2011-12-07 CN CN201180064181.9A patent/CN103460424B/zh active Active
- 2011-12-07 WO PCT/US2011/063745 patent/WO2012078759A2/en not_active Ceased
- 2011-12-07 BR BR112013013873A patent/BR112013013873A2/pt not_active IP Right Cessation
- 2011-12-07 JP JP2013543313A patent/JP6272030B2/ja active Active
- 2011-12-07 AU AU2011338460A patent/AU2011338460A1/en not_active Withdrawn
- 2011-12-07 CN CN201610835745.9A patent/CN106887449B/zh active Active
- 2011-12-07 CA CA2820256A patent/CA2820256A1/en not_active Abandoned
- 2011-12-07 SG SG2013037866A patent/SG190313A1/en unknown
- 2011-12-07 KR KR1020137017559A patent/KR101943595B1/ko active Active
- 2011-12-07 EP EP11846649.9A patent/EP2649659B1/en active Active
- 2011-12-07 MX MX2013006233A patent/MX2013006233A/es unknown
- 2011-12-07 RU RU2013131102/28A patent/RU2013131102A/ru not_active Application Discontinuation
- 2011-12-07 US US13/519,176 patent/US9214644B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012078759A3 (en) | 2012-09-27 |
| EP2649659A4 (en) | 2015-01-07 |
| CN103460424B (zh) | 2016-10-26 |
| JP2014505324A (ja) | 2014-02-27 |
| CA2820256A1 (en) | 2012-06-14 |
| RU2013131102A (ru) | 2015-01-20 |
| AU2011338460A1 (en) | 2013-06-06 |
| EP2649659A2 (en) | 2013-10-16 |
| CN106887449A (zh) | 2017-06-23 |
| EP2649659B1 (en) | 2020-05-06 |
| BR112013013873A2 (pt) | 2016-09-13 |
| US9214644B2 (en) | 2015-12-15 |
| CN103460424A (zh) | 2013-12-18 |
| CN106887449B (zh) | 2021-11-05 |
| WO2012078759A2 (en) | 2012-06-14 |
| US20130240842A1 (en) | 2013-09-19 |
| SG190313A1 (en) | 2013-06-28 |
| KR20130130011A (ko) | 2013-11-29 |
| JP6272030B2 (ja) | 2018-01-31 |
| KR101943595B1 (ko) | 2019-04-17 |
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