KR101894897B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101894897B1
KR101894897B1 KR1020127034102A KR20127034102A KR101894897B1 KR 101894897 B1 KR101894897 B1 KR 101894897B1 KR 1020127034102 A KR1020127034102 A KR 1020127034102A KR 20127034102 A KR20127034102 A KR 20127034102A KR 101894897 B1 KR101894897 B1 KR 101894897B1
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South Korea
Prior art keywords
insulating layer
electrode
transistor
region
gate insulating
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Expired - Fee Related
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KR1020127034102A
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English (en)
Korean (ko)
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KR20130079450A (ko
Inventor
키요시 카토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
KR1020127034102A 2010-06-04 2011-05-16 반도체 장치 Expired - Fee Related KR101894897B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-129349 2010-06-04
JP2010129349 2010-06-04
PCT/JP2011/061701 WO2011152233A1 (en) 2010-06-04 2011-05-16 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20130079450A KR20130079450A (ko) 2013-07-10
KR101894897B1 true KR101894897B1 (ko) 2018-09-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127034102A Expired - Fee Related KR101894897B1 (ko) 2010-06-04 2011-05-16 반도체 장치

Country Status (5)

Country Link
US (1) US8884283B2 (enExample)
JP (1) JP5808580B2 (enExample)
KR (1) KR101894897B1 (enExample)
TW (1) TWI557881B (enExample)
WO (1) WO2011152233A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
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US9001564B2 (en) 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
KR102097171B1 (ko) 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9343468B1 (en) * 2015-03-26 2016-05-17 Texas Instruments Incorporated Feed-forward bidirectional implanted split-gate flash memory cell
JP2023166879A (ja) * 2022-05-10 2023-11-22 株式会社村田製作所 インダクタ部品

Citations (3)

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