KR101842486B1 - 탄탈산 리튬 단결정의 육성 장치 및 육성 방법 - Google Patents

탄탈산 리튬 단결정의 육성 장치 및 육성 방법 Download PDF

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Publication number
KR101842486B1
KR101842486B1 KR1020167027016A KR20167027016A KR101842486B1 KR 101842486 B1 KR101842486 B1 KR 101842486B1 KR 1020167027016 A KR1020167027016 A KR 1020167027016A KR 20167027016 A KR20167027016 A KR 20167027016A KR 101842486 B1 KR101842486 B1 KR 101842486B1
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KR
South Korea
Prior art keywords
crucible
single crystal
lithium tantalate
raw material
coating layer
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Application number
KR1020167027016A
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English (en)
Korean (ko)
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KR20160128381A (ko
Inventor
츠구오 후쿠다
Original Assignee
가부시키가이샤 후쿠다켓쇼우기쥬츠겡큐쇼
주식회사 퓨엠
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Publication of KR20160128381A publication Critical patent/KR20160128381A/ko
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Publication of KR101842486B1 publication Critical patent/KR101842486B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167027016A 2014-07-14 2015-07-14 탄탈산 리튬 단결정의 육성 장치 및 육성 방법 KR101842486B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014144612 2014-07-14
JPJP-P-2014-144612 2014-07-14
JP2015091285 2015-04-28
JPJP-P-2015-091285 2015-04-28
PCT/JP2015/070166 WO2016010040A1 (ja) 2014-07-14 2015-07-14 タンタル酸リチウム単結晶の育成装置及び育成方法

Publications (2)

Publication Number Publication Date
KR20160128381A KR20160128381A (ko) 2016-11-07
KR101842486B1 true KR101842486B1 (ko) 2018-03-27

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KR1020167027016A KR101842486B1 (ko) 2014-07-14 2015-07-14 탄탈산 리튬 단결정의 육성 장치 및 육성 방법

Country Status (3)

Country Link
JP (1) JP6675065B2 (ja)
KR (1) KR101842486B1 (ja)
WO (1) WO2016010040A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7113478B2 (ja) * 2016-06-15 2022-08-05 株式会社福田結晶技術研究所 るつぼ並びに単結晶の育成装置及び育成方法
CN116905087B (zh) * 2023-09-13 2023-11-28 天通控股股份有限公司 一种钽酸锂晶体的生长方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002137985A (ja) 2000-10-30 2002-05-14 Murata Mfg Co Ltd 酸化物単結晶育成用坩堝とそれを用いた酸化物単結晶育成装置
JP2005029455A (ja) 2002-11-19 2005-02-03 Tokuyama Corp フッ化アルカリ土類金属のアズグロウン単結晶体
JP2012041200A (ja) * 2010-08-12 2012-03-01 Nippon Telegr & Teleph Corp <Ntt> 結晶成長方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515938A (en) * 1978-07-18 1980-02-04 Toshiba Corp Production of oxide piezoelectric body single crystal
JPS57156400A (en) * 1981-03-23 1982-09-27 Hitachi Metals Ltd Crucible for preparing single crystal
JPS60200980A (ja) * 1984-03-26 1985-10-11 Tanaka Kikinzoku Kogyo Kk クラツド容器
JPH0920584A (ja) * 1995-06-30 1997-01-21 Shin Etsu Chem Co Ltd 酸化物単結晶の製造方法
JP3636873B2 (ja) * 1997-10-13 2005-04-06 イビデン株式会社 単結晶引き上げ装置
JP2003300791A (ja) * 2002-04-04 2003-10-21 Hitachi Metals Ltd 酸化物単結晶の育成方法および育成装置
JP2004256322A (ja) * 2003-02-24 2004-09-16 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法、シリコン単結晶およびシリコン単結晶の引上げ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002137985A (ja) 2000-10-30 2002-05-14 Murata Mfg Co Ltd 酸化物単結晶育成用坩堝とそれを用いた酸化物単結晶育成装置
JP2005029455A (ja) 2002-11-19 2005-02-03 Tokuyama Corp フッ化アルカリ土類金属のアズグロウン単結晶体
JP2012041200A (ja) * 2010-08-12 2012-03-01 Nippon Telegr & Teleph Corp <Ntt> 結晶成長方法

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Publication number Publication date
WO2016010040A1 (ja) 2016-01-21
KR20160128381A (ko) 2016-11-07
JP6675065B2 (ja) 2020-04-01
JPWO2016010040A1 (ja) 2017-04-27

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