KR101819996B1 - 유기반도체 재료 - Google Patents

유기반도체 재료 Download PDF

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KR101819996B1
KR101819996B1 KR1020157031224A KR20157031224A KR101819996B1 KR 101819996 B1 KR101819996 B1 KR 101819996B1 KR 1020157031224 A KR1020157031224 A KR 1020157031224A KR 20157031224 A KR20157031224 A KR 20157031224A KR 101819996 B1 KR101819996 B1 KR 101819996B1
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phase
unit
liquid crystal
compound
organic semiconductor
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KR20150127738A (ko
Inventor
준이치 한나
타케오 고보리
타카유키 우스이
유키코 다카야시키
히로아키 이이노
아키라 오노
Original Assignee
고쿠리츠다이가쿠호진 토쿄고교 다이가꾸
디아이씨 가부시끼가이샤
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H01L51/0071
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • H01L51/0052
    • H01L51/0068
    • H01L51/0072
    • H01L51/0073
    • H01L51/0074
    • H01L51/0076
    • H01L51/05
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/654Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731Liquid crystalline materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
KR1020157031224A 2011-03-10 2012-03-09 유기반도체 재료 Active KR101819996B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-053642 2011-03-10
JP2011053642 2011-03-10
PCT/JP2012/056184 WO2012121393A1 (ja) 2011-03-10 2012-03-09 有機半導体材料

Related Parent Applications (1)

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KR1020137023793A Division KR20140020268A (ko) 2011-03-10 2012-03-09 유기반도체 재료

Related Child Applications (1)

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KR1020177033864A Division KR101942441B1 (ko) 2011-03-10 2012-03-09 유기반도체 재료

Publications (2)

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KR20150127738A KR20150127738A (ko) 2015-11-17
KR101819996B1 true KR101819996B1 (ko) 2018-01-18

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US (2) US10056557B2 (enExample)
EP (2) EP3428987B1 (enExample)
JP (2) JP5632531B2 (enExample)
KR (3) KR20140020268A (enExample)
CN (1) CN103534830B (enExample)
TW (1) TWI605105B (enExample)
WO (1) WO2012121393A1 (enExample)

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JP5632531B2 (ja) * 2011-03-10 2014-11-26 国立大学法人東京工業大学 有機半導体材料
US20120325305A1 (en) * 2011-06-21 2012-12-27 International Business Machines Corporation Ohmic contact between thin film solar cell and carbon-based transparent electrode
TWI535726B (zh) 2012-09-10 2016-06-01 迪愛生股份有限公司 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體
CN105190926B (zh) * 2013-03-07 2019-03-08 Dic株式会社 有机薄膜、使用其的有机半导体装置及有机晶体管
JP6188583B2 (ja) * 2014-01-06 2017-08-30 国立大学法人東京工業大学 2,7置換[1]ベンゾチエノ[3,2−b][1]ベンゾチオフェン誘導体の製造方法
CN110085742A (zh) * 2014-04-25 2019-08-02 日本化药株式会社 用于摄像元件用光电转换元件的材料和包含该材料的光电转换元件
JP6592758B2 (ja) * 2014-08-29 2019-10-23 日本化薬株式会社 新規な縮合多環芳香族化合物及びその用途
JP6243053B2 (ja) * 2014-09-25 2017-12-06 富士フイルム株式会社 有機電界効果トランジスタ、有機半導体結晶の製造方法、及び、有機半導体素子
JP2016102087A (ja) * 2014-11-28 2016-06-02 Dic株式会社 有機結晶構造物、及びそれを与える有機化合物を含有する有機半導体材料
WO2016088793A1 (ja) * 2014-12-05 2016-06-09 日本化薬株式会社 有機化合物及びその用途
JP6309687B2 (ja) * 2015-03-11 2018-04-11 富士フイルム株式会社 有機半導体膜形成用組成物、及び、有機半導体素子
WO2016185858A1 (ja) 2015-05-19 2016-11-24 ソニー株式会社 撮像素子、積層型撮像素子及び撮像装置
WO2016203925A1 (ja) * 2015-06-17 2016-12-22 ソニー株式会社 光電変換素子
JP2017017216A (ja) * 2015-07-02 2017-01-19 Dic株式会社 半導体組成物、半導体インク
US10516115B2 (en) 2015-08-28 2019-12-24 Dic Corporation Organic compound, method for preparing same, organic semiconductor material containing same, and organic transistor containing same
JP6656508B2 (ja) * 2015-09-30 2020-03-04 国立大学法人東京工業大学 ベンゾチエノベンゾチオフェン誘導体、有機半導体材料、及び有機トランジスタ
JP6778367B2 (ja) * 2016-02-23 2020-11-04 国立大学法人東京工業大学 新規化合物およびそれを含有する半導体材料
US11352308B2 (en) 2016-03-17 2022-06-07 Dic Corporation Compound and semiconductor material containing same
JPWO2018043725A1 (ja) * 2016-09-02 2019-06-24 国立大学法人東京工業大学 有機半導体材料及び有機化合物並びに有機半導体装置
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
CN106866709A (zh) * 2017-03-04 2017-06-20 长春海谱润斯科技有限公司 一种咔唑间位连接苯并噻吩衍生物及其有机发光器件
CN110085741A (zh) * 2018-01-26 2019-08-02 北京大学深圳研究生院 一种半导体材料及制备方法和应用
CN109244242B (zh) * 2018-08-31 2020-06-16 华南师范大学 一种有机太阳电池及其制备方法
WO2020241582A1 (ja) * 2019-05-27 2020-12-03 オルガノサイエンス株式会社 有機トランジスタ材料及び有機トランジスタ
JP7316365B2 (ja) * 2019-09-25 2023-07-27 富士フイルム株式会社 化合物、組成物、膜、構造体及び電子デバイス
CN115151552A (zh) * 2020-02-28 2022-10-04 日本化药株式会社 缩合多环芳香族化合物
KR102804177B1 (ko) * 2020-05-07 2025-05-07 주식회사 엘지화학 중합성 액정 화합물, 이를 포함하는 중합성 액정 조성물, 그 액정 중합막, 이를 구비하는 광학 이방체 및 광학소자
CN113735876B (zh) * 2021-02-03 2022-08-02 中国科学院化学研究所 一种不对称结构的苯并噻吩并噻吩并苯(btbt)衍生物及其制备方法与应用

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JP2006339474A (ja) 2005-06-03 2006-12-14 Dainippon Printing Co Ltd 有機半導体材料、有機半導体構造物及び有機半導体装置
JP2009057360A (ja) * 2007-09-02 2009-03-19 Junichi Hanna ネマティック液晶性有機半導体材料
US20100032655A1 (en) 2006-10-20 2010-02-11 Kazuo Takimiya Field-effect transistor

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JP5352260B2 (ja) 2009-02-02 2013-11-27 山本化成株式会社 有機トランジスタ
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JP2005330185A (ja) 2004-05-18 2005-12-02 Takasago Internatl Corp ジチア−s−インダセン誘導体
JP2006339474A (ja) 2005-06-03 2006-12-14 Dainippon Printing Co Ltd 有機半導体材料、有機半導体構造物及び有機半導体装置
US20100032655A1 (en) 2006-10-20 2010-02-11 Kazuo Takimiya Field-effect transistor
JP2009057360A (ja) * 2007-09-02 2009-03-19 Junichi Hanna ネマティック液晶性有機半導体材料

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Publication number Publication date
US20180351106A1 (en) 2018-12-06
EP2685514B1 (en) 2018-10-03
JP2015053497A (ja) 2015-03-19
KR101942441B1 (ko) 2019-01-25
US10937964B2 (en) 2021-03-02
JPWO2012121393A1 (ja) 2014-07-17
US20140081028A1 (en) 2014-03-20
JP6188663B2 (ja) 2017-08-30
US10056557B2 (en) 2018-08-21
KR20150127738A (ko) 2015-11-17
EP2685514A1 (en) 2014-01-15
WO2012121393A1 (ja) 2012-09-13
EP3428987A1 (en) 2019-01-16
KR20170132356A (ko) 2017-12-01
TW201243023A (en) 2012-11-01
EP2685514A4 (en) 2014-09-24
TWI605105B (zh) 2017-11-11
EP3428987B1 (en) 2020-02-26
CN103534830B (zh) 2017-03-01
KR20140020268A (ko) 2014-02-18
CN103534830A (zh) 2014-01-22
JP5632531B2 (ja) 2014-11-26

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