KR101819996B1 - 유기반도체 재료 - Google Patents
유기반도체 재료 Download PDFInfo
- Publication number
- KR101819996B1 KR101819996B1 KR1020157031224A KR20157031224A KR101819996B1 KR 101819996 B1 KR101819996 B1 KR 101819996B1 KR 1020157031224 A KR1020157031224 A KR 1020157031224A KR 20157031224 A KR20157031224 A KR 20157031224A KR 101819996 B1 KR101819996 B1 KR 101819996B1
- Authority
- KR
- South Korea
- Prior art keywords
- phase
- unit
- liquid crystal
- compound
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H01L51/0071—
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
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- H01L51/0052—
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- H01L51/0068—
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- H01L51/0072—
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- H01L51/0073—
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- H01L51/0074—
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- H01L51/0076—
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- H01L51/05—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/731—Liquid crystalline materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Electroluminescent Light Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Plural Heterocyclic Compounds (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2011-053642 | 2011-03-10 | ||
| JP2011053642 | 2011-03-10 | ||
| PCT/JP2012/056184 WO2012121393A1 (ja) | 2011-03-10 | 2012-03-09 | 有機半導体材料 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137023793A Division KR20140020268A (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177033864A Division KR101942441B1 (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150127738A KR20150127738A (ko) | 2015-11-17 |
| KR101819996B1 true KR101819996B1 (ko) | 2018-01-18 |
Family
ID=46798344
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137023793A Ceased KR20140020268A (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
| KR1020157031224A Active KR101819996B1 (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
| KR1020177033864A Active KR101942441B1 (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137023793A Ceased KR20140020268A (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177033864A Active KR101942441B1 (ko) | 2011-03-10 | 2012-03-09 | 유기반도체 재료 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10056557B2 (enExample) |
| EP (2) | EP3428987B1 (enExample) |
| JP (2) | JP5632531B2 (enExample) |
| KR (3) | KR20140020268A (enExample) |
| CN (1) | CN103534830B (enExample) |
| TW (1) | TWI605105B (enExample) |
| WO (1) | WO2012121393A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5632531B2 (ja) * | 2011-03-10 | 2014-11-26 | 国立大学法人東京工業大学 | 有機半導体材料 |
| US20120325305A1 (en) * | 2011-06-21 | 2012-12-27 | International Business Machines Corporation | Ohmic contact between thin film solar cell and carbon-based transparent electrode |
| TWI535726B (zh) | 2012-09-10 | 2016-06-01 | 迪愛生股份有限公司 | 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體 |
| CN105190926B (zh) * | 2013-03-07 | 2019-03-08 | Dic株式会社 | 有机薄膜、使用其的有机半导体装置及有机晶体管 |
| JP6188583B2 (ja) * | 2014-01-06 | 2017-08-30 | 国立大学法人東京工業大学 | 2,7置換[1]ベンゾチエノ[3,2−b][1]ベンゾチオフェン誘導体の製造方法 |
| CN110085742A (zh) * | 2014-04-25 | 2019-08-02 | 日本化药株式会社 | 用于摄像元件用光电转换元件的材料和包含该材料的光电转换元件 |
| JP6592758B2 (ja) * | 2014-08-29 | 2019-10-23 | 日本化薬株式会社 | 新規な縮合多環芳香族化合物及びその用途 |
| JP6243053B2 (ja) * | 2014-09-25 | 2017-12-06 | 富士フイルム株式会社 | 有機電界効果トランジスタ、有機半導体結晶の製造方法、及び、有機半導体素子 |
| JP2016102087A (ja) * | 2014-11-28 | 2016-06-02 | Dic株式会社 | 有機結晶構造物、及びそれを与える有機化合物を含有する有機半導体材料 |
| WO2016088793A1 (ja) * | 2014-12-05 | 2016-06-09 | 日本化薬株式会社 | 有機化合物及びその用途 |
| JP6309687B2 (ja) * | 2015-03-11 | 2018-04-11 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、及び、有機半導体素子 |
| WO2016185858A1 (ja) | 2015-05-19 | 2016-11-24 | ソニー株式会社 | 撮像素子、積層型撮像素子及び撮像装置 |
| WO2016203925A1 (ja) * | 2015-06-17 | 2016-12-22 | ソニー株式会社 | 光電変換素子 |
| JP2017017216A (ja) * | 2015-07-02 | 2017-01-19 | Dic株式会社 | 半導体組成物、半導体インク |
| US10516115B2 (en) | 2015-08-28 | 2019-12-24 | Dic Corporation | Organic compound, method for preparing same, organic semiconductor material containing same, and organic transistor containing same |
| JP6656508B2 (ja) * | 2015-09-30 | 2020-03-04 | 国立大学法人東京工業大学 | ベンゾチエノベンゾチオフェン誘導体、有機半導体材料、及び有機トランジスタ |
| JP6778367B2 (ja) * | 2016-02-23 | 2020-11-04 | 国立大学法人東京工業大学 | 新規化合物およびそれを含有する半導体材料 |
| US11352308B2 (en) | 2016-03-17 | 2022-06-07 | Dic Corporation | Compound and semiconductor material containing same |
| JPWO2018043725A1 (ja) * | 2016-09-02 | 2019-06-24 | 国立大学法人東京工業大学 | 有機半導体材料及び有機化合物並びに有機半導体装置 |
| JP6833445B2 (ja) * | 2016-10-18 | 2021-02-24 | 山本化成株式会社 | 有機トランジスタ |
| CN106866709A (zh) * | 2017-03-04 | 2017-06-20 | 长春海谱润斯科技有限公司 | 一种咔唑间位连接苯并噻吩衍生物及其有机发光器件 |
| CN110085741A (zh) * | 2018-01-26 | 2019-08-02 | 北京大学深圳研究生院 | 一种半导体材料及制备方法和应用 |
| CN109244242B (zh) * | 2018-08-31 | 2020-06-16 | 华南师范大学 | 一种有机太阳电池及其制备方法 |
| WO2020241582A1 (ja) * | 2019-05-27 | 2020-12-03 | オルガノサイエンス株式会社 | 有機トランジスタ材料及び有機トランジスタ |
| JP7316365B2 (ja) * | 2019-09-25 | 2023-07-27 | 富士フイルム株式会社 | 化合物、組成物、膜、構造体及び電子デバイス |
| CN115151552A (zh) * | 2020-02-28 | 2022-10-04 | 日本化药株式会社 | 缩合多环芳香族化合物 |
| KR102804177B1 (ko) * | 2020-05-07 | 2025-05-07 | 주식회사 엘지화학 | 중합성 액정 화합물, 이를 포함하는 중합성 액정 조성물, 그 액정 중합막, 이를 구비하는 광학 이방체 및 광학소자 |
| CN113735876B (zh) * | 2021-02-03 | 2022-08-02 | 中国科学院化学研究所 | 一种不对称结构的苯并噻吩并噻吩并苯(btbt)衍生物及其制备方法与应用 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005330185A (ja) | 2004-05-18 | 2005-12-02 | Takasago Internatl Corp | ジチア−s−インダセン誘導体 |
| JP2006339474A (ja) | 2005-06-03 | 2006-12-14 | Dainippon Printing Co Ltd | 有機半導体材料、有機半導体構造物及び有機半導体装置 |
| JP2009057360A (ja) * | 2007-09-02 | 2009-03-19 | Junichi Hanna | ネマティック液晶性有機半導体材料 |
| US20100032655A1 (en) | 2006-10-20 | 2010-02-11 | Kazuo Takimiya | Field-effect transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100366424B1 (ko) * | 2000-08-14 | 2003-01-09 | 삼성종합화학주식회사 | 내충격특성이 우수한 신디오탁틱 폴리스티렌의 리액터얼로이 |
| JP2006248948A (ja) | 2005-03-09 | 2006-09-21 | Dainippon Printing Co Ltd | 液晶性有機化合物、有機半導体構造物及び有機半導体装置並びに液晶性有機化合物の製造方法 |
| US8349209B2 (en) * | 2006-03-13 | 2013-01-08 | Jnc Corporation | Liquid crystal composition and liquid crystal element |
| JP5167560B2 (ja) | 2006-03-31 | 2013-03-21 | 日本化薬株式会社 | 電界効果トランジスタ |
| WO2009038120A1 (ja) | 2007-09-21 | 2009-03-26 | Nippon Kayaku Kabushiki Kaisha | 電界効果トランジスタ |
| JP5498680B2 (ja) * | 2008-10-02 | 2014-05-21 | 山本化成株式会社 | 有機トランジスタ |
| JP5352260B2 (ja) | 2009-02-02 | 2013-11-27 | 山本化成株式会社 | 有機トランジスタ |
| JP5664479B2 (ja) * | 2010-07-06 | 2015-02-04 | Jnc株式会社 | 新規液晶性化合物および該化合物を含有する有機半導体素子 |
| JP5632531B2 (ja) * | 2011-03-10 | 2014-11-26 | 国立大学法人東京工業大学 | 有機半導体材料 |
-
2012
- 2012-03-09 JP JP2013503635A patent/JP5632531B2/ja active Active
- 2012-03-09 KR KR1020137023793A patent/KR20140020268A/ko not_active Ceased
- 2012-03-09 EP EP18190614.0A patent/EP3428987B1/en active Active
- 2012-03-09 CN CN201280018838.2A patent/CN103534830B/zh active Active
- 2012-03-09 KR KR1020157031224A patent/KR101819996B1/ko active Active
- 2012-03-09 US US14/003,933 patent/US10056557B2/en active Active
- 2012-03-09 KR KR1020177033864A patent/KR101942441B1/ko active Active
- 2012-03-09 WO PCT/JP2012/056184 patent/WO2012121393A1/ja not_active Ceased
- 2012-03-09 EP EP12754820.4A patent/EP2685514B1/en active Active
- 2012-03-12 TW TW101108293A patent/TWI605105B/zh active
-
2014
- 2014-10-09 JP JP2014208316A patent/JP6188663B2/ja active Active
-
2018
- 2018-07-06 US US16/028,596 patent/US10937964B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005330185A (ja) | 2004-05-18 | 2005-12-02 | Takasago Internatl Corp | ジチア−s−インダセン誘導体 |
| JP2006339474A (ja) | 2005-06-03 | 2006-12-14 | Dainippon Printing Co Ltd | 有機半導体材料、有機半導体構造物及び有機半導体装置 |
| US20100032655A1 (en) | 2006-10-20 | 2010-02-11 | Kazuo Takimiya | Field-effect transistor |
| JP2009057360A (ja) * | 2007-09-02 | 2009-03-19 | Junichi Hanna | ネマティック液晶性有機半導体材料 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180351106A1 (en) | 2018-12-06 |
| EP2685514B1 (en) | 2018-10-03 |
| JP2015053497A (ja) | 2015-03-19 |
| KR101942441B1 (ko) | 2019-01-25 |
| US10937964B2 (en) | 2021-03-02 |
| JPWO2012121393A1 (ja) | 2014-07-17 |
| US20140081028A1 (en) | 2014-03-20 |
| JP6188663B2 (ja) | 2017-08-30 |
| US10056557B2 (en) | 2018-08-21 |
| KR20150127738A (ko) | 2015-11-17 |
| EP2685514A1 (en) | 2014-01-15 |
| WO2012121393A1 (ja) | 2012-09-13 |
| EP3428987A1 (en) | 2019-01-16 |
| KR20170132356A (ko) | 2017-12-01 |
| TW201243023A (en) | 2012-11-01 |
| EP2685514A4 (en) | 2014-09-24 |
| TWI605105B (zh) | 2017-11-11 |
| EP3428987B1 (en) | 2020-02-26 |
| CN103534830B (zh) | 2017-03-01 |
| KR20140020268A (ko) | 2014-02-18 |
| CN103534830A (zh) | 2014-01-22 |
| JP5632531B2 (ja) | 2014-11-26 |
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St.27 status event code: A-0-1-A10-A18-div-PA0104 St.27 status event code: A-0-1-A10-A16-div-PA0104 |
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| A201 | Request for examination | ||
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