JP5632531B2 - 有機半導体材料 - Google Patents

有機半導体材料 Download PDF

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Publication number
JP5632531B2
JP5632531B2 JP2013503635A JP2013503635A JP5632531B2 JP 5632531 B2 JP5632531 B2 JP 5632531B2 JP 2013503635 A JP2013503635 A JP 2013503635A JP 2013503635 A JP2013503635 A JP 2013503635A JP 5632531 B2 JP5632531 B2 JP 5632531B2
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Japan
Prior art keywords
unit
phase
liquid crystal
organic semiconductor
semiconductor material
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JP2013503635A
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English (en)
Japanese (ja)
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JPWO2012121393A1 (ja
Inventor
純一 半那
純一 半那
小堀　武夫
武夫 小堀
孝之 臼井
孝之 臼井
由紀子 高屋敷
由紀子 高屋敷
裕明 飯野
裕明 飯野
玲 大野
玲 大野
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DIC Corp
Tokyo Institute of Technology NUC
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DIC Corp
Tokyo Institute of Technology NUC
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Priority to JP2013503635A priority Critical patent/JP5632531B2/ja
Publication of JPWO2012121393A1 publication Critical patent/JPWO2012121393A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photovoltaic Devices (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Light Receiving Elements (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
JP2013503635A 2011-03-10 2012-03-09 有機半導体材料 Active JP5632531B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013503635A JP5632531B2 (ja) 2011-03-10 2012-03-09 有機半導体材料

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011053642 2011-03-10
JP2011053642 2011-03-10
PCT/JP2012/056184 WO2012121393A1 (ja) 2011-03-10 2012-03-09 有機半導体材料
JP2013503635A JP5632531B2 (ja) 2011-03-10 2012-03-09 有機半導体材料

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014208316A Division JP6188663B2 (ja) 2011-03-10 2014-10-09 有機半導体材料

Publications (2)

Publication Number Publication Date
JPWO2012121393A1 JPWO2012121393A1 (ja) 2014-07-17
JP5632531B2 true JP5632531B2 (ja) 2014-11-26

Family

ID=46798344

Family Applications (2)

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JP2013503635A Active JP5632531B2 (ja) 2011-03-10 2012-03-09 有機半導体材料
JP2014208316A Active JP6188663B2 (ja) 2011-03-10 2014-10-09 有機半導体材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014208316A Active JP6188663B2 (ja) 2011-03-10 2014-10-09 有機半導体材料

Country Status (7)

Country Link
US (2) US10056557B2 (enExample)
EP (2) EP3428987B1 (enExample)
JP (2) JP5632531B2 (enExample)
KR (3) KR101942441B1 (enExample)
CN (1) CN103534830B (enExample)
TW (1) TWI605105B (enExample)
WO (1) WO2012121393A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5632531B2 (ja) * 2011-03-10 2014-11-26 国立大学法人東京工業大学 有機半導体材料
US20120325305A1 (en) * 2011-06-21 2012-12-27 International Business Machines Corporation Ohmic contact between thin film solar cell and carbon-based transparent electrode
TWI535726B (zh) 2012-09-10 2016-06-01 迪愛生股份有限公司 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體
US10158087B2 (en) 2013-03-07 2018-12-18 DIC Corporation (Tokyo) Organic thin film, and organic semiconductor device and organic transistor using same
JP6188583B2 (ja) * 2014-01-06 2017-08-30 国立大学法人東京工業大学 ２，７置換［１］ベンゾチエノ［３，２−ｂ］［１］ベンゾチオフェン誘導体の製造方法
CN106233466B (zh) * 2014-04-25 2020-08-07 日本化药株式会社 用于摄像元件用光电转换元件的材料和包含该材料的光电转换元件
JP6592758B2 (ja) * 2014-08-29 2019-10-23 日本化薬株式会社 新規な縮合多環芳香族化合物及びその用途
EP3179517B1 (en) * 2014-09-25 2020-01-08 Fujifilm Corporation Organic field effect transistor and method for producing organic semiconductor crystal
JP2016102087A (ja) * 2014-11-28 2016-06-02 Dic株式会社 有機結晶構造物、及びそれを与える有機化合物を含有する有機半導体材料
JP6558777B2 (ja) * 2014-12-05 2019-08-14 日本化薬株式会社 有機化合物及びその用途
JP6309687B2 (ja) * 2015-03-11 2018-04-11 富士フイルム株式会社 有機半導体膜形成用組成物、及び、有機半導体素子
CN107534050B (zh) * 2015-05-19 2021-12-14 索尼公司 图像传感器、层叠型摄像装置和摄像模块
WO2016203925A1 (ja) * 2015-06-17 2016-12-22 ソニー株式会社 光電変換素子
JP2017017216A (ja) * 2015-07-02 2017-01-19 Dic株式会社 半導体組成物、半導体インク
JP6112269B1 (ja) 2015-08-28 2017-04-12 Dic株式会社 有機化合物、その製造法、それを含有する有機半導体材料及びそれを含有する有機トランジスタ
JP6656508B2 (ja) * 2015-09-30 2020-03-04 国立大学法人東京工業大学 ベンゾチエノベンゾチオフェン誘導体、有機半導体材料、及び有機トランジスタ
JP6778367B2 (ja) * 2016-02-23 2020-11-04 国立大学法人東京工業大学 新規化合物およびそれを含有する半導体材料
KR102308404B1 (ko) 2016-03-17 2021-10-06 디아이씨 가부시끼가이샤 신규 화합물 및 그것을 함유하는 반도체 재료
JPWO2018043725A1 (ja) * 2016-09-02 2019-06-24 国立大学法人東京工業大学 有機半導体材料及び有機化合物並びに有機半導体装置
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
CN106866709A (zh) * 2017-03-04 2017-06-20 长春海谱润斯科技有限公司 一种咔唑间位连接苯并噻吩衍生物及其有机发光器件
CN110085741A (zh) * 2018-01-26 2019-08-02 北京大学深圳研究生院 一种半导体材料及制备方法和应用
CN109244242B (zh) * 2018-08-31 2020-06-16 华南师范大学 一种有机太阳电池及其制备方法
WO2020241582A1 (ja) * 2019-05-27 2020-12-03 オルガノサイエンス株式会社 有機トランジスタ材料及び有機トランジスタ
WO2021060042A1 (ja) * 2019-09-25 2021-04-01 富士フイルム株式会社 化合物、組成物、膜、構造体及び電子デバイス
JP7709425B2 (ja) * 2020-02-28 2025-07-16 日本化薬株式会社 縮合多環芳香族化合物
KR102804177B1 (ko) * 2020-05-07 2025-05-07 주식회사 엘지화학 중합성 액정 화합물, 이를 포함하는 중합성 액정 조성물, 그 액정 중합막, 이를 구비하는 광학 이방체 및 광학소자
CN113735876B (zh) * 2021-02-03 2022-08-02 中国科学院化学研究所 一种不对称结构的苯并噻吩并噻吩并苯(btbt)衍生物及其制备方法与应用

Citations (4)

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JP2005330185A (ja) * 2004-05-18 2005-12-02 Takasago Internatl Corp ジチア−ｓ−インダセン誘導体
JP2006339474A (ja) * 2005-06-03 2006-12-14 Dainippon Printing Co Ltd 有機半導体材料、有機半導体構造物及び有機半導体装置
JP2009057360A (ja) * 2007-09-02 2009-03-19 Junichi Hanna ネマティック液晶性有機半導体材料
JP2012031159A (ja) * 2010-07-06 2012-02-16 Jnc Corp 新規液晶性化合物および該化合物を含有する有機半導体素子

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KR100366424B1 (ko) * 2000-08-14 2003-01-09 삼성종합화학주식회사 내충격특성이 우수한 신디오탁틱 폴리스티렌의 리액터얼로이
JP2006248948A (ja) * 2005-03-09 2006-09-21 Dainippon Printing Co Ltd 液晶性有機化合物、有機半導体構造物及び有機半導体装置並びに液晶性有機化合物の製造方法
EP2006352B1 (en) * 2006-03-13 2013-12-11 JNC Corporation Liquid-crystal composition and liquid-crystal element
JP5167560B2 (ja) 2006-03-31 2013-03-21 日本化薬株式会社 電界効果トランジスタ
US8124964B2 (en) * 2006-10-20 2012-02-28 Nippon Kayaku Kabushiki Kaisha Field-effect transistor
EP2207218B1 (en) 2007-09-21 2012-08-15 Nippon Kayaku Kabushiki Kaisha Field effect transistor
JP5498680B2 (ja) * 2008-10-02 2014-05-21 山本化成株式会社 有機トランジスタ
JP5352260B2 (ja) 2009-02-02 2013-11-27 山本化成株式会社 有機トランジスタ
JP5632531B2 (ja) * 2011-03-10 2014-11-26 国立大学法人東京工業大学 有機半導体材料

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005330185A (ja) * 2004-05-18 2005-12-02 Takasago Internatl Corp ジチア−ｓ−インダセン誘導体
JP2006339474A (ja) * 2005-06-03 2006-12-14 Dainippon Printing Co Ltd 有機半導体材料、有機半導体構造物及び有機半導体装置
JP2009057360A (ja) * 2007-09-02 2009-03-19 Junichi Hanna ネマティック液晶性有機半導体材料
JP2012031159A (ja) * 2010-07-06 2012-02-16 Jnc Corp 新規液晶性化合物および該化合物を含有する有機半導体素子

Also Published As

Publication number Publication date
US20140081028A1 (en) 2014-03-20
US10937964B2 (en) 2021-03-02
JP2015053497A (ja) 2015-03-19
JP6188663B2 (ja) 2017-08-30
KR20170132356A (ko) 2017-12-01
KR101819996B1 (ko) 2018-01-18
JPWO2012121393A1 (ja) 2014-07-17
US10056557B2 (en) 2018-08-21
EP3428987A1 (en) 2019-01-16
CN103534830B (zh) 2017-03-01
CN103534830A (zh) 2014-01-22
EP3428987B1 (en) 2020-02-26
EP2685514B1 (en) 2018-10-03
WO2012121393A1 (ja) 2012-09-13
EP2685514A1 (en) 2014-01-15
KR101942441B1 (ko) 2019-01-25
EP2685514A4 (en) 2014-09-24
KR20150127738A (ko) 2015-11-17
US20180351106A1 (en) 2018-12-06
TWI605105B (zh) 2017-11-11
TW201243023A (en) 2012-11-01
KR20140020268A (ko) 2014-02-18

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