KR101813375B1 - 광전 센서 - Google Patents

광전 센서 Download PDF

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Publication number
KR101813375B1
KR101813375B1 KR1020160059542A KR20160059542A KR101813375B1 KR 101813375 B1 KR101813375 B1 KR 101813375B1 KR 1020160059542 A KR1020160059542 A KR 1020160059542A KR 20160059542 A KR20160059542 A KR 20160059542A KR 101813375 B1 KR101813375 B1 KR 101813375B1
Authority
KR
South Korea
Prior art keywords
connector
base
cover
photoelectric sensor
light
Prior art date
Application number
KR1020160059542A
Other languages
English (en)
Korean (ko)
Other versions
KR20170012008A (ko
Inventor
순지 트수치다
Original Assignee
파나소닉 디바이스 썬크스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파나소닉 디바이스 썬크스 주식회사 filed Critical 파나소닉 디바이스 썬크스 주식회사
Publication of KR20170012008A publication Critical patent/KR20170012008A/ko
Application granted granted Critical
Publication of KR101813375B1 publication Critical patent/KR101813375B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Manufacture Of Switches (AREA)
  • Geophysics And Detection Of Objects (AREA)
KR1020160059542A 2015-07-23 2016-05-16 광전 센서 KR101813375B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-145770 2015-07-23
JP2015145770A JP6510347B2 (ja) 2015-07-23 2015-07-23 光電センサ、光電センサの製造方法

Publications (2)

Publication Number Publication Date
KR20170012008A KR20170012008A (ko) 2017-02-02
KR101813375B1 true KR101813375B1 (ko) 2017-12-28

Family

ID=57061660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160059542A KR101813375B1 (ko) 2015-07-23 2016-05-16 광전 센서

Country Status (4)

Country Link
JP (1) JP6510347B2 (zh)
KR (1) KR101813375B1 (zh)
CN (1) CN205642399U (zh)
TW (1) TW201704794A (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098471A (ja) 2006-10-13 2008-04-24 Sharp Corp 光結合装置およびその製造方法、並びに、光結合装置を用いた電子機器
US20080210952A1 (en) 2006-10-24 2008-09-04 Hideo Wada Photo interrupter, method of manufacturing the same, and electronic equipment using the same
JP2008270264A (ja) 2007-04-16 2008-11-06 Rohm Co Ltd フォトインタラプタ
JP2009050129A (ja) 2007-08-22 2009-03-05 Omron Corp セーフティコントローラ
JP2010062238A (ja) 2008-09-02 2010-03-18 Juki Corp フォトインタラプタ
JP2011027532A (ja) 2009-07-24 2011-02-10 Yamatake Corp 光電センサ
JP2015115186A (ja) 2013-12-11 2015-06-22 アズビル株式会社 光電スイッチ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0935594A (ja) * 1995-07-18 1997-02-07 Omron Corp 光センサ
JPH11145505A (ja) * 1997-11-11 1999-05-28 Omron Corp ホトセンサ及びその製造方法
JP3721887B2 (ja) * 1999-10-01 2005-11-30 オムロン株式会社 電子部品およびフォトマイクロセンサ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008098471A (ja) 2006-10-13 2008-04-24 Sharp Corp 光結合装置およびその製造方法、並びに、光結合装置を用いた電子機器
US20080210952A1 (en) 2006-10-24 2008-09-04 Hideo Wada Photo interrupter, method of manufacturing the same, and electronic equipment using the same
JP2008270264A (ja) 2007-04-16 2008-11-06 Rohm Co Ltd フォトインタラプタ
JP2009050129A (ja) 2007-08-22 2009-03-05 Omron Corp セーフティコントローラ
JP2010062238A (ja) 2008-09-02 2010-03-18 Juki Corp フォトインタラプタ
JP2011027532A (ja) 2009-07-24 2011-02-10 Yamatake Corp 光電センサ
JP2015115186A (ja) 2013-12-11 2015-06-22 アズビル株式会社 光電スイッチ

Also Published As

Publication number Publication date
KR20170012008A (ko) 2017-02-02
CN205642399U (zh) 2016-10-12
JP2017027812A (ja) 2017-02-02
TW201704794A (zh) 2017-02-01
JP6510347B2 (ja) 2019-05-08

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GRNT Written decision to grant