JP6510347B2 - 光電センサ、光電センサの製造方法 - Google Patents

光電センサ、光電センサの製造方法 Download PDF

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Publication number
JP6510347B2
JP6510347B2 JP2015145770A JP2015145770A JP6510347B2 JP 6510347 B2 JP6510347 B2 JP 6510347B2 JP 2015145770 A JP2015145770 A JP 2015145770A JP 2015145770 A JP2015145770 A JP 2015145770A JP 6510347 B2 JP6510347 B2 JP 6510347B2
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Japan
Prior art keywords
base
connector
photoelectric sensor
cover
light emitting
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Active
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JP2015145770A
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English (en)
Japanese (ja)
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JP2017027812A (ja
Inventor
俊司 土田
俊司 土田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Industrial Devices SUNX Co Ltd
Original Assignee
Panasonic Industrial Devices SUNX Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Panasonic Industrial Devices SUNX Co Ltd filed Critical Panasonic Industrial Devices SUNX Co Ltd
Priority to JP2015145770A priority Critical patent/JP6510347B2/ja
Priority to CN201620371698.2U priority patent/CN205642399U/zh
Priority to KR1020160059542A priority patent/KR101813375B1/ko
Priority to TW105115107A priority patent/TW201704794A/zh
Publication of JP2017027812A publication Critical patent/JP2017027812A/ja
Application granted granted Critical
Publication of JP6510347B2 publication Critical patent/JP6510347B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Switches Operated By Changes In Physical Conditions (AREA)
  • Manufacture Of Switches (AREA)
  • Geophysics And Detection Of Objects (AREA)
JP2015145770A 2015-07-23 2015-07-23 光電センサ、光電センサの製造方法 Active JP6510347B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015145770A JP6510347B2 (ja) 2015-07-23 2015-07-23 光電センサ、光電センサの製造方法
CN201620371698.2U CN205642399U (zh) 2015-07-23 2016-04-28 光电传感器
KR1020160059542A KR101813375B1 (ko) 2015-07-23 2016-05-16 광전 센서
TW105115107A TW201704794A (zh) 2015-07-23 2016-05-17 光電傳感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015145770A JP6510347B2 (ja) 2015-07-23 2015-07-23 光電センサ、光電センサの製造方法

Publications (2)

Publication Number Publication Date
JP2017027812A JP2017027812A (ja) 2017-02-02
JP6510347B2 true JP6510347B2 (ja) 2019-05-08

Family

ID=57061660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015145770A Active JP6510347B2 (ja) 2015-07-23 2015-07-23 光電センサ、光電センサの製造方法

Country Status (4)

Country Link
JP (1) JP6510347B2 (zh)
KR (1) KR101813375B1 (zh)
CN (1) CN205642399U (zh)
TW (1) TW201704794A (zh)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0935594A (ja) * 1995-07-18 1997-02-07 Omron Corp 光センサ
JPH11145505A (ja) * 1997-11-11 1999-05-28 Omron Corp ホトセンサ及びその製造方法
JP3721887B2 (ja) * 1999-10-01 2005-11-30 オムロン株式会社 電子部品およびフォトマイクロセンサ
JP2008098471A (ja) 2006-10-13 2008-04-24 Sharp Corp 光結合装置およびその製造方法、並びに、光結合装置を用いた電子機器
JP2008135683A (ja) 2006-10-24 2008-06-12 Sharp Corp 光結合装置およびその製造方法、並びに、光結合装置を用いた電子機器
JP5174371B2 (ja) 2007-04-16 2013-04-03 ローム株式会社 フォトインタラプタ
JP5093466B2 (ja) 2007-08-22 2012-12-12 オムロン株式会社 セーフティコントローラ
JP5198190B2 (ja) 2008-09-02 2013-05-15 株式会社タカデン フォトインタラプタ
JP2011027532A (ja) 2009-07-24 2011-02-10 Yamatake Corp 光電センサ
JP2015115186A (ja) 2013-12-11 2015-06-22 アズビル株式会社 光電スイッチ

Also Published As

Publication number Publication date
KR20170012008A (ko) 2017-02-02
CN205642399U (zh) 2016-10-12
JP2017027812A (ja) 2017-02-02
TW201704794A (zh) 2017-02-01
KR101813375B1 (ko) 2017-12-28

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