KR101807544B1 - 금속막 형성방법 - Google Patents

금속막 형성방법 Download PDF

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KR101807544B1
KR101807544B1 KR1020150121117A KR20150121117A KR101807544B1 KR 101807544 B1 KR101807544 B1 KR 101807544B1 KR 1020150121117 A KR1020150121117 A KR 1020150121117A KR 20150121117 A KR20150121117 A KR 20150121117A KR 101807544 B1 KR101807544 B1 KR 101807544B1
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metal film
mist
organic solvent
metal
carrier gas
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KR20160026761A (ko
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마사야 오다
토시미 히토라
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가부시키가이샤 플로스피아
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    • H01L51/0007—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/10—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L51/0008—
    • H01L51/0021—
    • H01L51/0026—
    • H01L51/0059—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • C03C2217/253—Cu
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/112—Deposition methods from solutions or suspensions by spraying

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020150121117A 2014-08-29 2015-08-27 금속막 형성방법 Active KR101807544B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-176648 2014-08-29
JP2014176648 2014-08-29
JPJP-P-2015-108025 2015-05-27
JP2015108025A JP6945120B2 (ja) 2014-08-29 2015-05-27 金属膜形成方法

Publications (2)

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KR20160026761A KR20160026761A (ko) 2016-03-09
KR101807544B1 true KR101807544B1 (ko) 2017-12-11

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US (1) US9828694B2 (enExample)
EP (1) EP2990503B1 (enExample)
JP (1) JP6945120B2 (enExample)
KR (1) KR101807544B1 (enExample)
CN (2) CN105386008B (enExample)
TW (1) TWI597381B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210158882A (ko) * 2016-03-11 2021-12-31 가부시키가이샤 니콘 미스트 발생장치, 성막장치, 미스트 발생 방법, 성막 방법, 및 디바이스 제조 방법
CN107371338B (zh) * 2016-05-13 2019-08-20 苏州卫鹏机电科技有限公司 一种超薄金属层的印刷线路板的制备方法
JP7065443B2 (ja) 2016-06-30 2022-05-12 株式会社Flosfia ｐ型酸化物半導体及びその製造方法
JP6994183B2 (ja) 2016-06-30 2022-01-14 株式会社Flosfia 酸化物半導体膜及びその製造方法
JP2018019052A (ja) * 2016-07-30 2018-02-01 株式会社Flosfia インダクタの製造方法
JP6879483B2 (ja) * 2016-07-30 2021-06-02 株式会社Flosfia コンデンサの製造方法
JP2018019050A (ja) * 2016-07-30 2018-02-01 株式会社Flosfia 抵抗体の製造方法
JP7064723B2 (ja) * 2017-03-31 2022-05-11 株式会社Flosfia 成膜方法
CN109628910B (zh) 2017-10-07 2023-06-30 株式会社Flosfia 形成膜的方法
JP2019119931A (ja) * 2017-12-29 2019-07-22 株式会社Flosfia 処理方法
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
JP7031564B2 (ja) * 2018-11-14 2022-03-08 トヨタ自動車株式会社 燃料電池用セパレータの製造方法
JP2020092125A (ja) * 2018-12-03 2020-06-11 トヨタ自動車株式会社 成膜装置
CN110318021B (zh) * 2019-07-26 2020-08-25 中国科学技术大学 一种晶圆级二氧化钒薄膜的制备方法
JP7261410B2 (ja) * 2019-09-02 2023-04-20 信越化学工業株式会社 金属膜形成方法
CN113439327B (zh) * 2020-01-23 2023-07-25 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
CN111364020B (zh) * 2020-04-10 2022-01-28 南昌航空大学 一种气溶胶传输辅助装置及输送方法
JP7380432B2 (ja) * 2020-06-02 2023-11-15 株式会社ニコン ミスト発生装置、薄膜製造装置、及び薄膜製造方法
CN116056804A (zh) * 2020-08-05 2023-05-02 信越化学工业株式会社 制膜用雾化装置、制膜装置以及制膜方法
CN112813406B (zh) * 2020-12-30 2023-07-14 武汉工程大学 基于cvd技术在异形件表面制备三维金属单质薄膜的设备及方法
TW202235663A (zh) * 2021-03-02 2022-09-16 日商信越化學工業股份有限公司 製膜方法、製膜裝置及積層體
KR102726925B1 (ko) * 2022-08-25 2024-11-11 한국표준과학연구원 에어로졸 촉매를 이용하여 2차원 나노소재의 결정립을 조절하는 방법
CN115894392B (zh) * 2022-12-02 2024-11-12 中国科学院福建物质结构研究所 (c3h8n6i6)·3h2o化合物、双折射晶体及其制法和用途

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034372A (en) 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JP2004277585A (ja) * 2003-03-17 2004-10-07 Canon Inc 有機顔料分散体製造方法および有機顔料分散体、水性着色液ならびにインクジェット記録用液
JP2007046155A (ja) * 2005-07-14 2007-02-22 Noda Screen:Kk 成膜方法、および装置
US20080131357A1 (en) 1998-11-09 2008-06-05 Nanogram Corporation Multiple metal oxide submicron particles

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69636627T2 (de) * 1995-08-04 2007-08-30 Ngimat Co. Chemischen gasphasenabscheidung und pulverbildung mittels einer thermischen spritzmethode aus beinahe superkitischen und superkritischen flussigkeitlösungen
US6010969A (en) * 1996-10-02 2000-01-04 Micron Technology, Inc. Method of depositing films on semiconductor devices by using carboxylate complexes
KR100460746B1 (ko) * 1999-04-13 2004-12-09 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
JP3638487B2 (ja) 1999-12-10 2005-04-13 株式会社荏原製作所 半導体素子の実装方法
JP4781571B2 (ja) 2001-07-31 2011-09-28 エルピーダメモリ株式会社 半導体装置の製造方法
AU2002337822A1 (en) * 2001-10-05 2003-04-22 Superior Micropowders Llc Low viscosity precursor compositions and methods for the deposition of conductive electronic features
DE102004001095A1 (de) * 2004-01-05 2005-07-28 Blue Membranes Gmbh Hochfrequenzzerstäubungsvorrichtung
KR101481933B1 (ko) * 2005-12-29 2015-01-14 쓰리엠 이노베이티브 프로퍼티즈 컴파니 코팅 공정을 위한 물질의 분무화 방법
CN101903959B (zh) 2007-12-18 2013-01-23 日立化成工业株式会社 铜导体膜及其制造方法、导电性基板及其制造方法、铜导体布线及其制造方法、以及处理液
JP2009167522A (ja) * 2007-12-21 2009-07-30 Shinko Electric Ind Co Ltd 銅膜の形成方法
KR100976264B1 (ko) 2008-03-31 2010-08-18 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
US20150004326A1 (en) * 2008-05-07 2015-01-01 Isaiah O. Oladeji Apparatus and method for depositing alkali metals
WO2010035313A1 (ja) * 2008-09-24 2010-04-01 東芝三菱電機産業システム株式会社 金属酸化膜の成膜方法および金属酸化膜の成膜装置
JP5659495B2 (ja) 2010-01-26 2015-01-28 三菱マテリアル株式会社 電極又は配線パターンの形成方法
CN102918178B (zh) * 2010-06-01 2015-02-11 东芝三菱电机产业系统株式会社 金属氧化膜的成膜装置、金属氧化膜的制造方法及金属氧化膜
JP2013129887A (ja) 2011-12-22 2013-07-04 Nitto Denko Corp 複合電極の形成方法
JP5343224B1 (ja) 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
MX374974B (es) 2012-10-12 2025-03-06 Vitro Vidrio Y Cristal S A De C V Un recubrimiento con propiedades de control solar para un substrato y, un metodo y sistema para depositar dicho recubrimiento sobre el substrato.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034372A (en) 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
US20080131357A1 (en) 1998-11-09 2008-06-05 Nanogram Corporation Multiple metal oxide submicron particles
JP2004277585A (ja) * 2003-03-17 2004-10-07 Canon Inc 有機顔料分散体製造方法および有機顔料分散体、水性着色液ならびにインクジェット記録用液
JP2007046155A (ja) * 2005-07-14 2007-02-22 Noda Screen:Kk 成膜方法、および装置

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Publication number Publication date
EP2990503A1 (en) 2016-03-02
EP2990503B1 (en) 2022-01-12
CN110952077A (zh) 2020-04-03
US20160060788A1 (en) 2016-03-03
CN105386008A (zh) 2016-03-09
TW201608048A (zh) 2016-03-01
US9828694B2 (en) 2017-11-28
JP6945120B2 (ja) 2021-10-06
KR20160026761A (ko) 2016-03-09
TWI597381B (zh) 2017-09-01
CN105386008B (zh) 2020-01-21
JP2016050357A (ja) 2016-04-11
CN110952077B (zh) 2022-09-13

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