KR101807369B1 - 본딩 장치 및 본딩 방법 - Google Patents

본딩 장치 및 본딩 방법 Download PDF

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Publication number
KR101807369B1
KR101807369B1 KR1020150176798A KR20150176798A KR101807369B1 KR 101807369 B1 KR101807369 B1 KR 101807369B1 KR 1020150176798 A KR1020150176798 A KR 1020150176798A KR 20150176798 A KR20150176798 A KR 20150176798A KR 101807369 B1 KR101807369 B1 KR 101807369B1
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South Korea
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die
collet
imaging
bonding
substrate
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Korean (ko)
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KR20160110058A (ko
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히로시 마끼
가즈오 나까노
유끼오 다니
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파스포드 테크놀로지 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020150176798A 2015-03-11 2015-12-11 본딩 장치 및 본딩 방법 Active KR101807369B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015048168A JP6510837B2 (ja) 2015-03-11 2015-03-11 ボンディング装置及びボンディング方法
JPJP-P-2015-048168 2015-03-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170139319A Division KR101874756B1 (ko) 2015-03-11 2017-10-25 본딩 장치 및 본딩 방법

Publications (2)

Publication Number Publication Date
KR20160110058A KR20160110058A (ko) 2016-09-21
KR101807369B1 true KR101807369B1 (ko) 2017-12-08

Family

ID=56984111

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KR1020150176798A Active KR101807369B1 (ko) 2015-03-11 2015-12-11 본딩 장치 및 본딩 방법
KR1020170139319A Active KR101874756B1 (ko) 2015-03-11 2017-10-25 본딩 장치 및 본딩 방법

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Country Status (4)

Country Link
JP (1) JP6510837B2 (enExample)
KR (2) KR101807369B1 (enExample)
CN (1) CN105977183B (enExample)
TW (1) TWI593046B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6643197B2 (ja) * 2016-07-13 2020-02-12 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
CN108511364B (zh) * 2017-02-28 2020-01-24 上海微电子装备（集团）股份有限公司 一种芯片键合装置
JP7164314B2 (ja) 2017-04-28 2022-11-01 ベシ スウィッツァーランド エージー 部品を基板上に搭載する装置及び方法
CN107093651B (zh) * 2017-05-18 2023-08-04 江西比太科技有限公司 太阳能硅片二合一自动上下料设备
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
EP3633715A1 (en) * 2018-10-02 2020-04-08 Infineon Technologies Austria AG Multi-clip structure for die bonding
US10861819B1 (en) * 2019-07-05 2020-12-08 Asm Technology Singapore Pte Ltd High-precision bond head positioning method and apparatus
JP7352159B2 (ja) * 2019-09-30 2023-09-28 日本電気硝子株式会社 デバイスの製造方法
JP7704534B2 (ja) * 2021-01-18 2025-07-08 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN112802793B (zh) * 2021-02-09 2025-04-15 深圳市卓兴半导体科技有限公司 运行机构和晶片吸附装置
JP7627934B2 (ja) * 2021-02-26 2025-02-07 アスリートＦａ株式会社 半導体デバイスの実装装置及び実装方法
CN116880020A (zh) * 2023-08-01 2023-10-13 长芯盛（武汉）科技有限公司 一种光器件耦合方法
CN117080127B (zh) * 2023-10-11 2024-01-05 江苏快克芯装备科技有限公司 芯片吸取异常检测装置及检测方法

Citations (2)

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JP2001024008A (ja) * 1999-07-09 2001-01-26 Fuji Photo Film Co Ltd 発光部品のボンディング方法および装置
JP2006032987A (ja) * 2005-09-27 2006-02-02 Renesas Technology Corp ボンディング装置および半導体集積回路装置の製造方法

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JPS6140040A (ja) * 1984-07-31 1986-02-26 Oki Electric Ind Co Ltd 発光素子のダイスボンデイング位置決め方法
JP2696617B2 (ja) * 1991-06-04 1998-01-14 ローム株式会社 ダイボンディング装置
JPH05337865A (ja) * 1992-06-10 1993-12-21 Sony Corp 半導体実装装置とこれを用いた実装方法
KR100214586B1 (ko) * 1995-12-29 1999-08-02 구자홍 홀로그램 모듈 조립장치
JPH11274180A (ja) * 1998-03-24 1999-10-08 Sony Corp ダイボンド装置及びそれを用いた半導体装置の製造方法
JP2000244195A (ja) 1999-02-17 2000-09-08 Rohm Co Ltd フリップチップ装着装置のチップ位置認識装置
JP2000269240A (ja) * 1999-03-16 2000-09-29 Hitachi Cable Ltd 光モジュールの製造方法及び光素子搭載装置
JP4425609B2 (ja) * 2003-02-19 2010-03-03 キヤノンマシナリー株式会社 チップマウント方法および装置
JP4156460B2 (ja) * 2003-07-09 2008-09-24 Ｔｄｋ株式会社 ワークのピックアップ方法及びその装置、実装機
JP3808465B2 (ja) * 2003-12-24 2006-08-09 エルピーダメモリ株式会社 マウント方法及び装置
JP2006261209A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 部品の吸着治具
JP4593429B2 (ja) 2005-10-04 2010-12-08 キヤノンマシナリー株式会社 ダイボンダ
JP2009212456A (ja) * 2008-03-06 2009-09-17 Sharp Corp ボンディング装置
JP4992953B2 (ja) * 2009-11-09 2012-08-08 株式会社竹屋 電子部品の取付構造
JP5989313B2 (ja) * 2011-09-15 2016-09-07 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
US8967452B2 (en) * 2012-04-17 2015-03-03 Asm Technology Singapore Pte Ltd Thermal compression bonding of semiconductor chips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024008A (ja) * 1999-07-09 2001-01-26 Fuji Photo Film Co Ltd 発光部品のボンディング方法および装置
JP2006032987A (ja) * 2005-09-27 2006-02-02 Renesas Technology Corp ボンディング装置および半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
CN105977183B (zh) 2019-10-25
CN105977183A (zh) 2016-09-28
TW201633441A (zh) 2016-09-16
KR20170121133A (ko) 2017-11-01
TWI593046B (zh) 2017-07-21
KR101874756B1 (ko) 2018-07-04
JP2016171106A (ja) 2016-09-23
KR20160110058A (ko) 2016-09-21
JP6510837B2 (ja) 2019-05-08

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