KR101798243B1 - 기판 분할 방법 - Google Patents

기판 분할 방법 Download PDF

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Publication number
KR101798243B1
KR101798243B1 KR1020110118673A KR20110118673A KR101798243B1 KR 101798243 B1 KR101798243 B1 KR 101798243B1 KR 1020110118673 A KR1020110118673 A KR 1020110118673A KR 20110118673 A KR20110118673 A KR 20110118673A KR 101798243 B1 KR101798243 B1 KR 101798243B1
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KR
South Korea
Prior art keywords
substrate
modified layer
dividing
laser beam
divided
Prior art date
Application number
KR1020110118673A
Other languages
English (en)
Korean (ko)
Other versions
KR20120068693A (ko
Inventor
마사루 나카무라
Original Assignee
가부시기가이샤 디스코
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Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20120068693A publication Critical patent/KR20120068693A/ko
Application granted granted Critical
Publication of KR101798243B1 publication Critical patent/KR101798243B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
KR1020110118673A 2010-12-17 2011-11-15 기판 분할 방법 KR101798243B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-281166 2010-12-17
JP2010281166A JP5819605B2 (ja) 2010-12-17 2010-12-17 基板の分割方法

Publications (2)

Publication Number Publication Date
KR20120068693A KR20120068693A (ko) 2012-06-27
KR101798243B1 true KR101798243B1 (ko) 2017-11-15

Family

ID=46646148

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110118673A KR101798243B1 (ko) 2010-12-17 2011-11-15 기판 분할 방법

Country Status (3)

Country Link
JP (1) JP5819605B2 (ja)
KR (1) KR101798243B1 (ja)
TW (1) TWI515069B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6105874B2 (ja) * 2012-08-06 2017-03-29 株式会社ディスコ ウエーハの加工方法
JP6105872B2 (ja) * 2012-08-06 2017-03-29 株式会社ディスコ ウエーハの加工方法
JP6105873B2 (ja) * 2012-08-06 2017-03-29 株式会社ディスコ ウエーハの加工方法
JP6189066B2 (ja) * 2013-03-27 2017-08-30 株式会社ディスコ ウエーハの加工方法
JP6189178B2 (ja) * 2013-10-29 2017-08-30 株式会社ディスコ レーザー加工装置
JP6649308B2 (ja) * 2017-03-22 2020-02-19 キオクシア株式会社 半導体装置およびその製造方法
JP6957185B2 (ja) * 2017-04-17 2021-11-02 浜松ホトニクス株式会社 加工対象物切断方法及び半導体チップ
JP7083716B2 (ja) * 2018-07-20 2022-06-13 株式会社ディスコ ウェーハの加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008071892A (ja) * 2006-09-13 2008-03-27 Disco Abrasive Syst Ltd 積層用デバイスの製造方法
JP2009206534A (ja) * 2002-03-12 2009-09-10 Hamamatsu Photonics Kk 切断起点領域の形成方法
JP2010026041A (ja) 2008-07-16 2010-02-04 Seiko Epson Corp 表示パネルの製造方法
JP2010143770A (ja) 2008-12-16 2010-07-01 Seiko Epson Corp 加工対象物の分割方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206534A (ja) * 2002-03-12 2009-09-10 Hamamatsu Photonics Kk 切断起点領域の形成方法
JP2008071892A (ja) * 2006-09-13 2008-03-27 Disco Abrasive Syst Ltd 積層用デバイスの製造方法
JP2010026041A (ja) 2008-07-16 2010-02-04 Seiko Epson Corp 表示パネルの製造方法
JP2010143770A (ja) 2008-12-16 2010-07-01 Seiko Epson Corp 加工対象物の分割方法

Also Published As

Publication number Publication date
JP2012129430A (ja) 2012-07-05
TW201226094A (en) 2012-07-01
JP5819605B2 (ja) 2015-11-24
TWI515069B (zh) 2016-01-01
KR20120068693A (ko) 2012-06-27

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