KR101780862B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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KR101780862B1
KR101780862B1 KR1020150134549A KR20150134549A KR101780862B1 KR 101780862 B1 KR101780862 B1 KR 101780862B1 KR 1020150134549 A KR1020150134549 A KR 1020150134549A KR 20150134549 A KR20150134549 A KR 20150134549A KR 101780862 B1 KR101780862 B1 KR 101780862B1
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substrate
temperature
sulfuric acid
acid solution
liquid
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KR20160038778A (ko
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구니히로 미야자키
겐지 미나미
유지 나가시마
고노스케 하야시
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H01L21/02282—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H01L21/02557—
    • H01L21/67017—
    • H01L21/67126—
    • H01L21/6715—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H01L2924/01016—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020150134549A 2014-09-30 2015-09-23 기판 처리 장치 및 기판 처리 방법 Active KR101780862B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-201483 2014-09-30
JP2014201483 2014-09-30
JPJP-P-2015-163850 2015-08-21
JP2015163850A JP6587865B2 (ja) 2014-09-30 2015-08-21 基板処理装置及び基板処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170116729A Division KR101879994B1 (ko) 2014-09-30 2017-09-12 기판 처리 장치 및 기판 처리 방법

Publications (2)

Publication Number Publication Date
KR20160038778A KR20160038778A (ko) 2016-04-07
KR101780862B1 true KR101780862B1 (ko) 2017-10-10

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Application Number Title Priority Date Filing Date
KR1020150134549A Active KR101780862B1 (ko) 2014-09-30 2015-09-23 기판 처리 장치 및 기판 처리 방법
KR1020170116729A Active KR101879994B1 (ko) 2014-09-30 2017-09-12 기판 처리 장치 및 기판 처리 방법
KR1020180068787A Active KR101930210B1 (ko) 2014-09-30 2018-06-15 기판 처리 장치 및 기판 처리 방법

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KR1020170116729A Active KR101879994B1 (ko) 2014-09-30 2017-09-12 기판 처리 장치 및 기판 처리 방법
KR1020180068787A Active KR101930210B1 (ko) 2014-09-30 2018-06-15 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (3) JP6587865B2 (https=)
KR (3) KR101780862B1 (https=)
CN (1) CN108461427B (https=)
TW (3) TWI669580B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6587865B2 (ja) * 2014-09-30 2019-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR20180013327A (ko) 2016-07-29 2018-02-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6876570B2 (ja) * 2017-07-28 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス 処理液除電方法、基板処理方法および基板処理システム
JP7181764B2 (ja) * 2018-03-26 2022-12-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7094147B2 (ja) * 2018-05-30 2022-07-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7220537B2 (ja) * 2018-09-20 2023-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102012209B1 (ko) * 2018-10-04 2019-10-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7128099B2 (ja) * 2018-11-27 2022-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN113448186B (zh) * 2020-03-27 2024-05-14 长鑫存储技术有限公司 晶圆处理装置及晶圆处理方法
KR102622445B1 (ko) * 2020-04-24 2024-01-09 세메스 주식회사 기판 처리 장치 및 액 공급 방법
JP7421410B2 (ja) * 2020-04-30 2024-01-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、学習用データの生成方法、学習方法、学習装置、学習済モデルの生成方法、および、学習済モデル
EP4654250A1 (en) * 2023-01-19 2025-11-26 SCREEN Holdings Co., Ltd. Substrate treatment device and substrate treatment method
JP2024121131A (ja) * 2023-02-27 2024-09-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235341A (ja) * 2007-03-16 2008-10-02 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2013074090A (ja) * 2011-09-28 2013-04-22 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715895B2 (ja) * 1984-10-29 1995-02-22 富士通株式会社 基板表面洗浄方法
JP3277404B2 (ja) * 1993-03-31 2002-04-22 ソニー株式会社 基板洗浄方法及び基板洗浄装置
JP2000091288A (ja) * 1998-09-11 2000-03-31 Pyuarekkusu:Kk 高温霧状硫酸による半導体基板の洗浄方法及び洗浄装置
JP3540180B2 (ja) * 1998-12-24 2004-07-07 株式会社東芝 半導体装置の製造方法及び製造装置
JP3773458B2 (ja) * 2002-03-18 2006-05-10 大日本スクリーン製造株式会社 基板処理方法及びその装置
JP2007165842A (ja) * 2005-11-21 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP5106800B2 (ja) * 2006-06-26 2012-12-26 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4787089B2 (ja) * 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP2008066400A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5016417B2 (ja) * 2007-08-24 2012-09-05 大日本スクリーン製造株式会社 基板処理装置
JP5460633B2 (ja) * 2010-05-17 2014-04-02 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録した記録媒体
JP5714449B2 (ja) * 2011-08-25 2015-05-07 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP6232212B2 (ja) * 2012-08-09 2017-11-15 芝浦メカトロニクス株式会社 洗浄液生成装置及び基板洗浄装置
JP6587865B2 (ja) * 2014-09-30 2019-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235341A (ja) * 2007-03-16 2008-10-02 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2013074090A (ja) * 2011-09-28 2013-04-22 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
JP6970791B2 (ja) 2021-11-24
TW201622838A (zh) 2016-07-01
TW201833692A (zh) 2018-09-16
KR20180074628A (ko) 2018-07-03
CN108461427B (zh) 2022-02-22
JP2019220695A (ja) 2019-12-26
JP6736735B2 (ja) 2020-08-05
CN108461427A (zh) 2018-08-28
TWI629115B (zh) 2018-07-11
JP6587865B2 (ja) 2019-10-09
JP2020181993A (ja) 2020-11-05
JP2016072613A (ja) 2016-05-09
KR101930210B1 (ko) 2018-12-17
KR101879994B1 (ko) 2018-07-18
TWI647547B (zh) 2019-01-11
KR20160038778A (ko) 2016-04-07
TWI669580B (zh) 2019-08-21
TW201734675A (zh) 2017-10-01
KR20170106277A (ko) 2017-09-20

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