JP6970791B2 - 基板処理装置及び基板処理方法 - Google Patents
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- 238000003672 processing method Methods 0.000 title claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 354
- 239000000758 substrate Substances 0.000 claims description 241
- 239000000243 solution Substances 0.000 claims description 159
- 239000007788 liquid Substances 0.000 claims description 144
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 45
- 238000009835 boiling Methods 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 21
- 239000011259 mixed solution Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 238000011084 recovery Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 10
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 10
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
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- 230000001105 regulatory effect Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
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Description
硫酸溶液及び過酸化水素水の混合液を用いて基板を処理する基板処理装置であって、
前記過酸化水素水の沸点以上で所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給する硫酸溶液供給部と、
前記基板の処理対象面とは反対面に供給される前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給する混合液供給部と、
制御部とを有し、
前記制御部は、前記硫酸溶液供給部に対し、前記基板の温度を前記基板処理温度以上とするように前記過酸化水素水の沸点以上で前記所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給させ、前記混合液供給部に対し、前記基板処理温度以上になった前記基板に対して、前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給させることを特徴とする。
硫酸溶液及び過酸化水素水の混合液を用いて基板を処理する基板処理方法であって、
前記過酸化水素水の沸点以上で所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給し、前記基板の温度を前記基板処理温度以上とする工程と、
前記基板処理温度以上になった前記基板に対して、前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給する工程と、
を有することを特徴とする。
前述の実施形態においては、第1の液供給部3aにより基板Wの処理対象面Waに第1温度の硫酸溶液を供給しているが、これに限るものではなく、その基板Wの処理対象面Waに対する硫酸溶液の供給を無くし、例えば、第3の液供給部3cにより、基板Wの処理対象面Waの反対面Wbに第3温度の硫酸溶液、つまり第1温度以上の硫酸溶液を供給して基板Wを温めるようにしても良い。すなわち、第1温度以上の硫酸溶液により基板Wを温めることが可能であれば、基板Wの処理対象面Wa及びその反対面Wbのどちらに硫酸溶液を供給しても良い。
3a 第1の液供給部
3b 第2の液供給部
3c 第3の液供給部
5 制御部
W 基板
Wa 処理対象面
Wb 処理対象面の反対面
Claims (7)
- 硫酸溶液及び過酸化水素水の混合液を用いて基板を処理する基板処理装置であって、
前記過酸化水素水の沸点以上で所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給する硫酸溶液供給部と、
前記基板の処理対象面とは反対面に供給される前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給する混合液供給部と、
制御部とを有し、
前記制御部は、前記硫酸溶液供給部に対し、前記基板の温度を前記基板処理温度以上とするように前記過酸化水素水の沸点以上で前記所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給させ、前記混合液供給部に対し、前記基板処理温度以上になった前記基板に対して、前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給させることを特徴とする基板処理装置。 - 前記混合液の温度は、前記過酸化水素水の沸点より低いことを特徴とする請求項1に記載の基板処理装置。
- 前記制御部は、前記硫酸溶液供給部に対し、前記基板の処理対象面とは反対面への前記硫酸溶液の供給を継続させつつ、前記混合液供給部に対し、前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給させることを特徴とする請求項1または2に記載の基板処理装置。
- 前記硫酸溶液を貯留する第1の貯留部と、
前記第1の貯留部内の前記硫酸溶液を循環させる循環管と、
前記過酸化水素水を貯留する第2の貯留部と、
前記第1の貯留部に貯留される前記硫酸溶液を加熱する第1の加熱部と、
前記循環管に個別に接続され、前記第1の貯留部に貯留される前記硫酸溶液が流れる第1の供給管と第2の供給管とを有し、
前記混合液を供給する液供給部は前記第1の供給管を含み、
前記硫酸溶液を供給する液供給部は前記第2の供給管を含み、
前記第2の供給管には、その内部を流れる前記硫酸溶液を加熱する第2の加熱部を有し、
前記第1の供給管には、前記第2の貯留部に貯留される前記過酸化水素水が流れる混合管が接続されることを特徴とする請求項1乃至3のいずれかに記載の基板処理装置。 - 硫酸溶液及び過酸化水素水の混合液を用いて基板を処理する基板処理方法であって、
前記過酸化水素水の沸点以上で所定の基板処理温度以上の温度の硫酸溶液を前記基板の処理対象面とは反対面に供給し、前記基板の温度を前記基板処理温度以上とする工程と、
前記基板処理温度以上になった前記基板に対して、前記硫酸溶液の温度より低い温度の前記混合液を前記基板の処理対象面に供給する工程と、
を有することを特徴とする基板処理方法。 - 前記混合液の温度は、前記過酸化水素水の沸点より低いことを特徴とする請求項5に記載の基板処理方法。
- 前記混合液を前記基板の処理対象面に供給する工程では、前記基板の処理対象面とは反対面への前記硫酸溶液の供給を継続させることを特徴とする請求項5または6に記載の基板処理方法。
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JPH0715895B2 (ja) * | 1984-10-29 | 1995-02-22 | 富士通株式会社 | 基板表面洗浄方法 |
JP3277404B2 (ja) * | 1993-03-31 | 2002-04-22 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
JP2000091288A (ja) * | 1998-09-11 | 2000-03-31 | Pyuarekkusu:Kk | 高温霧状硫酸による半導体基板の洗浄方法及び洗浄装置 |
JP3540180B2 (ja) * | 1998-12-24 | 2004-07-07 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
JP3773458B2 (ja) * | 2002-03-18 | 2006-05-10 | 大日本スクリーン製造株式会社 | 基板処理方法及びその装置 |
JP2007165842A (ja) * | 2005-11-21 | 2007-06-28 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
JP5106800B2 (ja) * | 2006-06-26 | 2012-12-26 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4787089B2 (ja) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2008066400A (ja) * | 2006-09-05 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5090030B2 (ja) * | 2007-03-16 | 2012-12-05 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5016417B2 (ja) * | 2007-08-24 | 2012-09-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP5460633B2 (ja) * | 2010-05-17 | 2014-04-02 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録した記録媒体 |
JP5714449B2 (ja) * | 2011-08-25 | 2015-05-07 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
JP5837787B2 (ja) * | 2011-09-28 | 2015-12-24 | 株式会社Screenホールディングス | 基板処理装置 |
JP6232212B2 (ja) * | 2012-08-09 | 2017-11-15 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置及び基板洗浄装置 |
JP6587865B2 (ja) * | 2014-09-30 | 2019-10-09 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
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