JP2016072613A - 基板処理装置及び基板処理方法 - Google Patents
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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Abstract
Description
前述の実施形態においては、第1の液供給部3aにより基板Wの処理対象面Waに第1温度の硫酸溶液を供給しているが、これに限るものではなく、その基板Wの処理対象面Waに対する硫酸溶液の供給を無くし、例えば、第3の液供給部3cにより、基板Wの処理対象面Waの反対面Wbに第3温度の硫酸溶液、つまり第1温度以上の硫酸溶液を供給して基板Wを温めるようにしても良い。すなわち、第1温度以上の硫酸溶液により基板Wを温めることが可能であれば、基板Wの処理対象面Wa及びその反対面Wbのどちらに硫酸溶液を供給しても良い。
3a 第1の液供給部
3b 第2の液供給部
3c 第3の液供給部
5 制御部
W 基板
Wa 処理対象面
Wb 処理対象面の反対面
Claims (6)
- 過酸化水素水の沸点以上の第1温度の硫酸溶液を基板に供給する第1の液供給部と、
硫酸溶液及び過酸化水素水の混合液であって前記第1温度より低い第2温度の混合液を前記基板の処理対象面に供給する第2の液供給部と、
前記基板の温度を前記過酸化水素水の沸点以上とするように前記第1の液供給部に前記第1温度の硫酸溶液を供給させ、前記基板の温度が前記第2温度以上となった場合、前記第1の液供給部に前記第1温度の硫酸溶液の供給を止めさせ、前記第2の液供給部に前記第2温度の混合液を供給させる制御部と、
を備えることを特徴とする基板処理装置。 - 前記第1温度以上の第3温度の硫酸溶液を前記基板の処理対象面の反対面に供給する第3の液供給部をさらに備え、
前記第1の液供給部は、前記基板の処理対象面に前記第1温度の硫酸溶液を供給し、
前記制御部は、前記過酸化水素水の沸点以上となった前記基板の温度を維持するように前記第3の液供給部に前記第3温度の硫酸溶液を供給させることを特徴とする請求項1に記載の基板処理装置。 - 前記硫酸溶液の硫酸の質量パーセント濃度は65%以上であり、
前記第1温度は150℃以上308℃以下であり、
前記第2温度は150℃未満であることを特徴とする請求項1又は請求項2に記載の基板処理装置。 - 過酸化水素水の沸点以上の第1温度の硫酸溶液を基板に供給し、前記基板の温度を前記過酸化水素水の沸点以上とする工程と、
前記基板の温度が前記過酸化水素水の沸点以上となった場合、前記第1温度の硫酸溶液の供給を停止し、硫酸溶液及び過酸化水素水の混合液であって前記第1温度より低い第2温度の混合液を前記基板の処理対象面に供給する工程と、
を有することを特徴とする基板処理方法。 - 前記基板の温度を前記過酸化水素水の沸点以上とする工程では、前記第1温度の硫酸溶液を前記基板の処理対象面に供給し、
前記第1温度以上の第3温度の硫酸溶液を前記基板の処理対象面の反対面に供給し、前記第2温度以上となった前記基板の温度を維持する工程をさらに有することを特徴とする請求項4に記載の基板処理方法。 - 前記硫酸溶液の硫酸の質量パーセント濃度は65%以上であり、
前記第1温度は150℃以上308℃以下であり、
前記第2温度は150℃未満であることを特徴とする請求項4又は請求項5に記載の基板処理方法。
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TW104131269A TWI629115B (zh) | 2014-09-30 | 2015-09-22 | 基板處理裝置及基板處理方法 |
TW107119206A TWI669580B (zh) | 2014-09-30 | 2015-09-22 | 基板處理裝置及基板處理方法 |
TW106118891A TWI647547B (zh) | 2014-09-30 | 2015-09-22 | 基板處理裝置及基板處理方法 |
KR1020150134549A KR101780862B1 (ko) | 2014-09-30 | 2015-09-23 | 기판 처리 장치 및 기판 처리 방법 |
US14/867,458 US9966282B2 (en) | 2014-09-30 | 2015-09-28 | Substrate processing apparatus and substrate processing method |
CN201510639612.XA CN105470111B (zh) | 2014-09-30 | 2015-09-30 | 基板处理装置及基板处理方法 |
CN201810238635.3A CN108461427B (zh) | 2014-09-30 | 2015-09-30 | 基板处理装置及基板处理方法 |
KR1020170116729A KR101879994B1 (ko) | 2014-09-30 | 2017-09-12 | 기판 처리 장치 및 기판 처리 방법 |
KR1020180068787A KR101930210B1 (ko) | 2014-09-30 | 2018-06-15 | 기판 처리 장치 및 기판 처리 방법 |
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KR20180113946A (ko) * | 2018-10-04 | 2018-10-17 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
WO2019021741A1 (ja) * | 2017-07-28 | 2019-01-31 | 株式会社Screenホールディングス | 処理液除電方法、基板処理方法および基板処理システム |
US10304687B2 (en) | 2016-07-29 | 2019-05-28 | Semes Co., Ltd. | Substrate treating apparatus and substrate treating method |
CN110364431A (zh) * | 2018-03-26 | 2019-10-22 | 株式会社斯库林集团 | 基板处理方法及基板处理装置 |
JP2019207982A (ja) * | 2018-05-30 | 2019-12-05 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2020047857A (ja) * | 2018-09-20 | 2020-03-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
WO2020110709A1 (ja) * | 2018-11-27 | 2020-06-04 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2021174958A (ja) * | 2020-04-30 | 2021-11-01 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法、学習用データの生成方法、学習方法、学習装置、学習済モデルの生成方法、および、学習済モデル |
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JP6587865B2 (ja) * | 2014-09-30 | 2019-10-09 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
KR102622445B1 (ko) * | 2020-04-24 | 2024-01-09 | 세메스 주식회사 | 기판 처리 장치 및 액 공급 방법 |
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KR101780862B1 (ko) | 2017-10-10 |
TWI629115B (zh) | 2018-07-11 |
CN108461427A (zh) | 2018-08-28 |
JP6970791B2 (ja) | 2021-11-24 |
KR20180074628A (ko) | 2018-07-03 |
TWI669580B (zh) | 2019-08-21 |
KR101930210B1 (ko) | 2018-12-17 |
TW201833692A (zh) | 2018-09-16 |
JP6587865B2 (ja) | 2019-10-09 |
TWI647547B (zh) | 2019-01-11 |
TW201734675A (zh) | 2017-10-01 |
TW201622838A (zh) | 2016-07-01 |
CN108461427B (zh) | 2022-02-22 |
KR20170106277A (ko) | 2017-09-20 |
KR101879994B1 (ko) | 2018-07-18 |
KR20160038778A (ko) | 2016-04-07 |
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