KR101780068B1 - 마스크 블랭크 및 전사용 마스크의 제조 방법 - Google Patents

마스크 블랭크 및 전사용 마스크의 제조 방법 Download PDF

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Publication number
KR101780068B1
KR101780068B1 KR1020110003903A KR20110003903A KR101780068B1 KR 101780068 B1 KR101780068 B1 KR 101780068B1 KR 1020110003903 A KR1020110003903 A KR 1020110003903A KR 20110003903 A KR20110003903 A KR 20110003903A KR 101780068 B1 KR101780068 B1 KR 101780068B1
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KR
South Korea
Prior art keywords
film
mask
etching
light
resist
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Expired - Fee Related
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KR1020110003903A
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English (en)
Korean (ko)
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KR20110084374A (ko
Inventor
마사히로 하시모또
히로유끼 이와시따
다까히로 히로마쯔
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020110003903A 2010-01-16 2011-01-14 마스크 블랭크 및 전사용 마스크의 제조 방법 Expired - Fee Related KR101780068B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010007590 2010-01-16
JPJP-P-2010-007590 2010-01-16

Publications (2)

Publication Number Publication Date
KR20110084374A KR20110084374A (ko) 2011-07-22
KR101780068B1 true KR101780068B1 (ko) 2017-09-21

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KR1020110003903A Expired - Fee Related KR101780068B1 (ko) 2010-01-16 2011-01-14 마스크 블랭크 및 전사용 마스크의 제조 방법

Country Status (4)

Country Link
US (1) US8409772B2 (enExample)
JP (1) JP5704754B2 (enExample)
KR (1) KR101780068B1 (enExample)
TW (1) TWI519887B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594069B (zh) * 2011-09-21 2017-08-01 Hoya Corp Method of manufacturing a transfer mask
JP5939662B2 (ja) * 2011-09-21 2016-06-22 Hoya株式会社 マスクブランクの製造方法
JP5739375B2 (ja) 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法
JP5795991B2 (ja) 2012-05-16 2015-10-14 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法、および位相シフトマスクの製造方法
JP6118038B2 (ja) * 2012-05-22 2017-04-19 Hoya株式会社 マスクブランクの欠陥検査方法、マスクブランクの製造方法、及び転写用マスクの製造方法
JP5906143B2 (ja) * 2012-06-27 2016-04-20 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6111059B2 (ja) * 2012-12-07 2017-04-05 Hoya株式会社 基板冷却装置及びマスクブランクの製造方法
JP6266919B2 (ja) * 2013-08-19 2018-01-24 Hoya株式会社 転写用マスクの製造方法
JP6234898B2 (ja) * 2013-09-25 2017-11-22 信越化学工業株式会社 フォトマスクブランクの製造方法
JP6258151B2 (ja) * 2013-09-25 2018-01-10 信越化学工業株式会社 フォトマスクブランクおよびその製造方法
JP6292581B2 (ja) 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
WO2016147518A1 (ja) * 2015-03-19 2016-09-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6523873B2 (ja) * 2015-08-27 2019-06-05 Hoya株式会社 マスクブランクの製造方法、転写用マスクの製造方法、およびマスクブランク
SG10201908855RA (en) * 2015-11-06 2019-10-30 Hoya Corp Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6713336B2 (ja) * 2016-04-21 2020-06-24 Hoya株式会社 マスクブランクの製造方法、および転写用マスクの製造方法
CN105842981B (zh) * 2016-05-03 2020-01-07 岭南师范学院 一种低成本精密芯片模具光刻掩膜的制备方法
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP7491681B2 (ja) * 2019-02-05 2024-05-28 株式会社トッパンフォトマスク クロムブランクス、フォトマスクの製造方法、およびインプリントモールドの製造方法
CN113614636A (zh) * 2019-03-07 2021-11-05 Hoya株式会社 掩模坯料、转印用掩模的制造方法、及半导体器件的制造方法
JP6738935B2 (ja) * 2019-04-26 2020-08-12 Hoya株式会社 マスクブランクの製造方法、転写用マスクの製造方法、およびマスクブランク

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006146151A (ja) * 2004-10-22 2006-06-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4319920B2 (ja) * 2004-02-04 2009-08-26 ミサワホーム株式会社 浴室周辺構造
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP4413828B2 (ja) * 2004-10-22 2010-02-10 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5393972B2 (ja) 2007-11-05 2014-01-22 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP5323526B2 (ja) 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
JP4702905B2 (ja) * 2009-05-29 2011-06-15 Ｈｏｙａ株式会社 位相シフトマスクの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006146151A (ja) * 2004-10-22 2006-06-08 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法

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Publication number Publication date
JP5704754B2 (ja) 2015-04-22
TWI519887B (zh) 2016-02-01
KR20110084374A (ko) 2011-07-22
US8409772B2 (en) 2013-04-02
TW201214020A (en) 2012-04-01
US20110177436A1 (en) 2011-07-21
JP2011164598A (ja) 2011-08-25

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