KR101764560B1 - 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 - Google Patents

반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Download PDF

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KR101764560B1
KR101764560B1 KR1020167032138A KR20167032138A KR101764560B1 KR 101764560 B1 KR101764560 B1 KR 101764560B1 KR 1020167032138 A KR1020167032138 A KR 1020167032138A KR 20167032138 A KR20167032138 A KR 20167032138A KR 101764560 B1 KR101764560 B1 KR 101764560B1
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analyzer
frequency
phase
phase information
detection signal
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KR20160135845A (ko
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도모노리 나카무라
미츠노리 니시자와
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하마마츠 포토닉스 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/16—Spectrum analysis; Fourier analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
KR1020167032138A 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법 Active KR101764560B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-018683 2013-02-01
JP2013018683 2013-02-01
PCT/JP2014/052146 WO2014119676A1 (ja) 2013-02-01 2014-01-30 半導体デバイス検査装置及び半導体デバイス検査方法

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Related Child Applications (1)

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KR1020177015376A Division KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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KR20160135845A KR20160135845A (ko) 2016-11-28
KR101764560B1 true KR101764560B1 (ko) 2017-08-02

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KR1020167032138A Active KR101764560B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157019600A Active KR101679527B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177015376A Ceased KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177024676A Active KR101923846B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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KR1020157018901A Active KR101777031B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177015376A Ceased KR20170069292A (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
KR1020177024676A Active KR101923846B1 (ko) 2013-02-01 2014-01-30 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법

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US (4) US9618563B2 (enExample)
JP (3) JP5744353B2 (enExample)
KR (5) KR101764560B1 (enExample)
SG (3) SG10201604835TA (enExample)
WO (2) WO2014119675A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR102574579B1 (ko) * 2022-06-23 2023-09-06 큐알티 주식회사 표준 시료를 이용한 빔 특성 평가 장치 및 이를 이용한 빔 특성 평가 방법

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US9618563B2 (en) * 2013-02-01 2017-04-11 Hamamatsu Photonics K.K. Semiconductor device inspection device and semiconductor device inspection method
JP2016109673A (ja) * 2014-10-16 2016-06-20 ディーシージー システムズ、 インコーポレイテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． レーザボルテージイメージングのシステム及び方法
JP6714485B2 (ja) * 2016-09-28 2020-06-24 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP2018072290A (ja) * 2016-11-04 2018-05-10 ルネサスエレクトロニクス株式会社 故障箇所特定装置および故障箇所特定方法
JP7159312B2 (ja) * 2018-06-28 2022-10-24 株式会社日立ハイテク 半導体検査装置
US11011435B2 (en) * 2018-11-20 2021-05-18 Asm Technology Singapore Pte Ltd Apparatus and method inspecting bonded semiconductor dice
JP7164488B2 (ja) * 2019-05-31 2022-11-01 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
WO2020241083A1 (ja) * 2019-05-31 2020-12-03 浜松ホトニクス株式会社 半導体デバイス検査方法及び半導体デバイス検査装置
JP6824351B1 (ja) * 2019-09-13 2021-02-03 浜松ホトニクス株式会社 半導体試料の検査装置及び検査方法
US11204383B2 (en) * 2019-09-30 2021-12-21 Formfactor, Inc. Methods for maintaining gap spacing between an optical probe of a probe system and an optical device of a device under test, and probe systems that perform the methods
US11133864B1 (en) * 2020-04-24 2021-09-28 Ciena Corporation Measurement of crosstalk
KR102425048B1 (ko) * 2020-12-24 2022-07-27 큐알티 주식회사 반도체 소자 테스트용 빔 검사 장치, 및 빔 검사 방법
CN117280224A (zh) * 2021-05-21 2023-12-22 株式会社日立高新技术 试样检查装置
KR102586199B1 (ko) * 2021-10-21 2023-10-06 큐알티 주식회사 전력 반도체 소자의 검사 방법, 및 이를 위한 검사 시스템
KR102418633B1 (ko) * 2021-12-22 2022-07-07 큐알티 주식회사 반도체 소자의 방사선 평가 방법, 및 반도체 소자의 방사선 평가 시스템

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
US10101383B2 (en) 2018-10-16
KR101679527B1 (ko) 2016-11-24
WO2014119675A1 (ja) 2014-08-07
KR20150103686A (ko) 2015-09-11
KR20170069292A (ko) 2017-06-20
KR101777031B1 (ko) 2017-09-08
JP5745707B2 (ja) 2015-07-08
KR20160135845A (ko) 2016-11-28
SG10201604835TA (en) 2016-07-28
US20160334459A1 (en) 2016-11-17
US9618563B2 (en) 2017-04-11
SG11201505833XA (en) 2015-08-28
KR101923846B1 (ko) 2018-11-29
US10191104B2 (en) 2019-01-29
JP6389797B2 (ja) 2018-09-12
SG11201505836WA (en) 2015-09-29
JPWO2014119676A1 (ja) 2017-01-26
US20150377959A1 (en) 2015-12-31
WO2014119676A1 (ja) 2014-08-07
KR20150112954A (ko) 2015-10-07
JPWO2014119675A1 (ja) 2017-01-26
US20170176521A1 (en) 2017-06-22
JP2015145883A (ja) 2015-08-13
US20150369755A1 (en) 2015-12-24
US9562944B2 (en) 2017-02-07
KR20170104637A (ko) 2017-09-15
JP5744353B2 (ja) 2015-07-08

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End annual number: 9