KR101752018B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

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KR101752018B1
KR101752018B1 KR1020127004870A KR20127004870A KR101752018B1 KR 101752018 B1 KR101752018 B1 KR 101752018B1 KR 1020127004870 A KR1020127004870 A KR 1020127004870A KR 20127004870 A KR20127004870 A KR 20127004870A KR 101752018 B1 KR101752018 B1 KR 101752018B1
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South Korea
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polyhydric alcohol
composition
copper
oxide
substrate
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KR20120051721A (ko
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코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
알렉산드라 하그
디터 마이어
샤를롯 엠넷
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
KR1020127004870A 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101752018B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120051721A KR20120051721A (ko) 2012-05-22
KR101752018B1 true KR101752018B1 (ko) 2017-06-28

Family

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KR1020127004870A Active KR101752018B1 (ko) 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (1) US9869029B2 (OSRAM)
EP (1) EP2459778B1 (OSRAM)
JP (1) JP5714581B2 (OSRAM)
KR (1) KR101752018B1 (OSRAM)
CN (1) CN102597329B (OSRAM)
IL (1) IL217536A (OSRAM)
MY (1) MY157126A (OSRAM)
RU (1) RU2539897C2 (OSRAM)
SG (2) SG10201404394QA (OSRAM)
TW (1) TWI487813B (OSRAM)
WO (1) WO2011012462A2 (OSRAM)

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US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
RU2013142806A (ru) * 2011-02-22 2015-03-27 Басф Се Полимеры на основе глицеринкарбоната и спирта
RU2600985C2 (ru) * 2011-02-22 2016-10-27 Басф Се Полимеры на основе глицеринкарбоната
SG194983A1 (en) 2011-06-01 2013-12-30 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
MX2015011887A (es) * 2013-03-13 2016-06-07 Basf Se Composiciones humectantes que aumentan de manera eficaz la retencion de humedad en el suelo y metodos asociados para identificar las mismas.
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CN105899715B (zh) * 2013-12-09 2019-05-31 阿文尼公司 含有电化学惰性阳离子的铜电沉积浴
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
WO2018015168A1 (en) * 2016-07-18 2018-01-25 Basf Se Composition for cobalt plating comprising additive for void-free submicron feature filling
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ レベリング剤を含んだコバルト電気メッキ用組成物
JP7383632B2 (ja) * 2018-03-29 2023-11-20 ビーエーエスエフ ソシエタス・ヨーロピア 錯化剤を含むスズ－銀合金電気メッキ用組成物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021197950A1 (en) 2020-04-03 2021-10-07 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
WO2023052254A1 (en) 2021-10-01 2023-04-06 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
KR20250036166A (ko) 2022-07-07 2025-03-13 바스프 에스이 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물

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Also Published As

Publication number Publication date
IL217536A0 (en) 2012-02-29
TWI487813B (zh) 2015-06-11
RU2012107133A (ru) 2013-09-10
SG10201404394QA (en) 2014-10-30
RU2539897C2 (ru) 2015-01-27
CN102597329A (zh) 2012-07-18
EP2459778A2 (en) 2012-06-06
KR20120051721A (ko) 2012-05-22
WO2011012462A2 (en) 2011-02-03
WO2011012462A3 (en) 2012-01-19
US9869029B2 (en) 2018-01-16
TW201109477A (en) 2011-03-16
US20120128888A1 (en) 2012-05-24
MY157126A (en) 2016-05-13
JP5714581B2 (ja) 2015-05-07
IL217536A (en) 2016-05-31
CN102597329B (zh) 2015-12-16
JP2013500394A (ja) 2013-01-07
SG177685A1 (en) 2012-02-28
EP2459778B1 (en) 2015-01-14

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