MY157126A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents
Composition for metal plating comprising suppressing agent for void free submicron feature fillingInfo
- Publication number
- MY157126A MY157126A MYPI2012000302A MYPI2012000302A MY157126A MY 157126 A MY157126 A MY 157126A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY PI2012000302 A MYPI2012000302 A MY PI2012000302A MY 157126 A MY157126 A MY 157126A
- Authority
- MY
- Malaysia
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- feature filling
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 239000011800 void material Substances 0.000 title 1
- 150000005846 sugar alcohols Polymers 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22980309P | 2009-07-30 | 2009-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY157126A true MY157126A (en) | 2016-05-13 |
Family
ID=43425023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2012000302A MY157126A (en) | 2009-07-30 | 2010-07-16 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9869029B2 (OSRAM) |
| EP (1) | EP2459778B1 (OSRAM) |
| JP (1) | JP5714581B2 (OSRAM) |
| KR (1) | KR101752018B1 (OSRAM) |
| CN (1) | CN102597329B (OSRAM) |
| IL (1) | IL217536A (OSRAM) |
| MY (1) | MY157126A (OSRAM) |
| RU (1) | RU2539897C2 (OSRAM) |
| SG (2) | SG10201404394QA (OSRAM) |
| TW (1) | TWI487813B (OSRAM) |
| WO (1) | WO2011012462A2 (OSRAM) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011012475A1 (en) * | 2009-07-30 | 2011-02-03 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US8790426B2 (en) | 2010-04-27 | 2014-07-29 | Basf Se | Quaternized terpolymer |
| MY170653A (en) | 2010-12-21 | 2019-08-23 | Basf Se | Composition for metal electroplating comprising leveling agent |
| RU2013142806A (ru) * | 2011-02-22 | 2015-03-27 | Басф Се | Полимеры на основе глицеринкарбоната и спирта |
| RU2600985C2 (ru) * | 2011-02-22 | 2016-10-27 | Басф Се | Полимеры на основе глицеринкарбоната |
| SG194983A1 (en) | 2011-06-01 | 2013-12-30 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US20130133243A1 (en) | 2011-06-28 | 2013-05-30 | Basf Se | Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants |
| MY172822A (en) | 2012-11-09 | 2019-12-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| MX2015011887A (es) * | 2013-03-13 | 2016-06-07 | Basf Se | Composiciones humectantes que aumentan de manera eficaz la retencion de humedad en el suelo y metodos asociados para identificar las mismas. |
| PL406197A1 (pl) * | 2013-11-22 | 2015-05-25 | Inphotech Spółka Z Ograniczoną Odpowiedzialnością | Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi |
| CN105899715B (zh) * | 2013-12-09 | 2019-05-31 | 阿文尼公司 | 含有电化学惰性阳离子的铜电沉积浴 |
| US9617648B2 (en) * | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| WO2018015168A1 (en) * | 2016-07-18 | 2018-01-25 | Basf Se | Composition for cobalt plating comprising additive for void-free submicron feature filling |
| US11926918B2 (en) | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| JP2021503560A (ja) * | 2017-11-20 | 2021-02-12 | ビーエイエスエフ・ソシエタス・エウロパエアBasf Se | レベリング剤を含んだコバルト電気メッキ用組成物 |
| JP7383632B2 (ja) * | 2018-03-29 | 2023-11-20 | ビーエーエスエフ ソシエタス・ヨーロピア | 錯化剤を含むスズ-銀合金電気メッキ用組成物 |
| US10529622B1 (en) | 2018-07-10 | 2020-01-07 | International Business Machines Corporation | Void-free metallic interconnect structures with self-formed diffusion barrier layers |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| US20220333262A1 (en) | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| WO2021197950A1 (en) | 2020-04-03 | 2021-10-07 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| US11384446B2 (en) | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| WO2023052254A1 (en) | 2021-10-01 | 2023-04-06 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| KR20250036166A (ko) | 2022-07-07 | 2025-03-13 | 바스프 에스이 | 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도 |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2441555A (en) | 1943-10-12 | 1948-05-18 | Heyden Chemical Corp | Mixed esters of polyhydric alcohols |
| GB602591A (en) * | 1945-02-12 | 1948-05-31 | Du Pont | Improvements in or relating to the electro-deposition of metals |
| US3956079A (en) * | 1972-12-14 | 1976-05-11 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4376685A (en) * | 1981-06-24 | 1983-03-15 | M&T Chemicals Inc. | Acid copper electroplating baths containing brightening and leveling additives |
| SU1055781A1 (ru) * | 1982-03-22 | 1983-11-23 | Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности | Водный электролит блест щего меднени |
| US4487853A (en) * | 1983-12-27 | 1984-12-11 | Basf Wyandotte Corporation | Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon |
| JPS62182295A (ja) * | 1985-08-07 | 1987-08-10 | Daiwa Tokushu Kk | 銅メツキ浴組成物 |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| US5888373A (en) * | 1997-06-23 | 1999-03-30 | Industrial Technology Research Institute | Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof |
| DE10033433A1 (de) * | 2000-07-10 | 2002-01-24 | Basf Ag | Verfahren zur elektrolytischen Verzinkung aus alkansulfonsäurehaltigen Elektrolyten |
| KR100852636B1 (ko) | 2000-10-13 | 2008-08-18 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 시드 보충 및 전기도금조 |
| US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
| ATE267278T1 (de) * | 2000-10-19 | 2004-06-15 | Atotech Deutschland Gmbh | Kupferbad und verfahren zur abscheidung eines matten kupferüberzuges |
| US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| DE10107880B4 (de) | 2001-02-20 | 2007-12-06 | Clariant Produkte (Deutschland) Gmbh | Alkoxylierte Polyglycerine und ihre Verwendung als Emulsionsspalter |
| EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| DE10325198B4 (de) | 2003-06-04 | 2007-10-25 | Clariant Produkte (Deutschland) Gmbh | Verwendung von alkoxylierten vernetzten Polyglycerinen als biologisch abbaubare Emulsionsspalter |
| US20050133376A1 (en) * | 2003-12-19 | 2005-06-23 | Opaskar Vincent C. | Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom |
| EP1819848A1 (en) | 2004-11-29 | 2007-08-22 | Technic, Incorporated | Near neutral ph tin electroplating solution |
| US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2282682C1 (ru) * | 2005-04-28 | 2006-08-27 | Российский химико-технологический университет им. Д.И. Менделеева | Электролит и способ меднения |
| MY142392A (en) | 2005-10-26 | 2010-11-30 | Malaysian Palm Oil Board | A process for preparing polymers of polyhydric alcohols |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| RU2385366C1 (ru) * | 2008-12-15 | 2010-03-27 | Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта | Электролит меднения стальных подложек |
| MY158203A (en) | 2009-04-07 | 2016-09-15 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| SG10201401324YA (en) | 2009-04-07 | 2014-08-28 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| JP5722872B2 (ja) | 2009-04-07 | 2015-05-27 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 |
-
2010
- 2010-07-16 CN CN201080033647.4A patent/CN102597329B/zh active Active
- 2010-07-16 EP EP10731757.0A patent/EP2459778B1/en active Active
- 2010-07-16 US US13/387,776 patent/US9869029B2/en active Active
- 2010-07-16 MY MYPI2012000302A patent/MY157126A/en unknown
- 2010-07-16 JP JP2012522093A patent/JP5714581B2/ja active Active
- 2010-07-16 SG SG10201404394QA patent/SG10201404394QA/en unknown
- 2010-07-16 KR KR1020127004870A patent/KR101752018B1/ko active Active
- 2010-07-16 RU RU2012107133/02A patent/RU2539897C2/ru not_active IP Right Cessation
- 2010-07-16 WO PCT/EP2010/060276 patent/WO2011012462A2/en not_active Ceased
- 2010-07-16 SG SG2012003315A patent/SG177685A1/en unknown
- 2010-07-30 TW TW099125535A patent/TWI487813B/zh active
-
2012
- 2012-01-15 IL IL217536A patent/IL217536A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IL217536A0 (en) | 2012-02-29 |
| TWI487813B (zh) | 2015-06-11 |
| RU2012107133A (ru) | 2013-09-10 |
| SG10201404394QA (en) | 2014-10-30 |
| RU2539897C2 (ru) | 2015-01-27 |
| CN102597329A (zh) | 2012-07-18 |
| EP2459778A2 (en) | 2012-06-06 |
| KR20120051721A (ko) | 2012-05-22 |
| WO2011012462A2 (en) | 2011-02-03 |
| WO2011012462A3 (en) | 2012-01-19 |
| US9869029B2 (en) | 2018-01-16 |
| TW201109477A (en) | 2011-03-16 |
| US20120128888A1 (en) | 2012-05-24 |
| KR101752018B1 (ko) | 2017-06-28 |
| JP5714581B2 (ja) | 2015-05-07 |
| IL217536A (en) | 2016-05-31 |
| CN102597329B (zh) | 2015-12-16 |
| JP2013500394A (ja) | 2013-01-07 |
| SG177685A1 (en) | 2012-02-28 |
| EP2459778B1 (en) | 2015-01-14 |
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