RU2539897C2 - Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности - Google Patents

Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности Download PDF

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Publication number
RU2539897C2
RU2539897C2 RU2012107133/02A RU2012107133A RU2539897C2 RU 2539897 C2 RU2539897 C2 RU 2539897C2 RU 2012107133/02 A RU2012107133/02 A RU 2012107133/02A RU 2012107133 A RU2012107133 A RU 2012107133A RU 2539897 C2 RU2539897 C2 RU 2539897C2
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Russia
Prior art keywords
composition according
copper
condensate
polyalcohol
surface elements
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RU2012107133/02A
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English (en)
Russian (ru)
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RU2012107133A (ru
Inventor
Корнелиа РЕГЕР-ГЕПФЕРТ
Роман Бенедикт РЭТЕР
Александра ХААГ
Дитер МАЙЕР
Шарлотте ЭМНЕТ
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Басф Се
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
RU2012107133/02A 2009-07-30 2010-07-16 Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности RU2539897C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
RU2012107133A RU2012107133A (ru) 2013-09-10
RU2539897C2 true RU2539897C2 (ru) 2015-01-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2012107133/02A RU2539897C2 (ru) 2009-07-30 2010-07-16 Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности

Country Status (11)

Country Link
US (1) US9869029B2 (OSRAM)
EP (1) EP2459778B1 (OSRAM)
JP (1) JP5714581B2 (OSRAM)
KR (1) KR101752018B1 (OSRAM)
CN (1) CN102597329B (OSRAM)
IL (1) IL217536A (OSRAM)
MY (1) MY157126A (OSRAM)
RU (1) RU2539897C2 (OSRAM)
SG (2) SG10201404394QA (OSRAM)
TW (1) TWI487813B (OSRAM)
WO (1) WO2011012462A2 (OSRAM)

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WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
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BR112013021040A2 (pt) * 2011-02-22 2016-10-11 Basf Se polímero, processo para a preparação de um polímero, e, uso de polímeros
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
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KR102312018B1 (ko) * 2013-12-09 2021-10-13 아베니 전기화학적 불활성 양이온을 함유하는 구리 전착 배쓰
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
CN114059125A (zh) * 2016-07-18 2022-02-18 巴斯夫欧洲公司 包含用于无空隙亚微米结构填充的添加剂的钴镀覆用组合物
CN115182004A (zh) * 2016-12-20 2022-10-14 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN111051576B (zh) 2017-09-04 2022-08-16 巴斯夫欧洲公司 用于金属电镀的包含流平剂的组合物
KR102647950B1 (ko) * 2017-11-20 2024-03-14 바스프 에스이 레벨링제를 포함하는 코발트 전기도금용 조성물
KR102786663B1 (ko) 2018-03-29 2025-03-25 바스프 에스이 착화제를 포함하는 주석-은 합금 전기도금용 조성물
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
CN118043502A (zh) 2021-10-01 2024-05-14 巴斯夫欧洲公司 用于铜电沉积的包含聚氨基酰胺型流平剂的组合物
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物

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Also Published As

Publication number Publication date
IL217536A (en) 2016-05-31
WO2011012462A3 (en) 2012-01-19
US9869029B2 (en) 2018-01-16
KR101752018B1 (ko) 2017-06-28
RU2012107133A (ru) 2013-09-10
CN102597329A (zh) 2012-07-18
US20120128888A1 (en) 2012-05-24
MY157126A (en) 2016-05-13
SG10201404394QA (en) 2014-10-30
SG177685A1 (en) 2012-02-28
TWI487813B (zh) 2015-06-11
EP2459778A2 (en) 2012-06-06
WO2011012462A2 (en) 2011-02-03
TW201109477A (en) 2011-03-16
JP5714581B2 (ja) 2015-05-07
EP2459778B1 (en) 2015-01-14
KR20120051721A (ko) 2012-05-22
IL217536A0 (en) 2012-02-29
JP2013500394A (ja) 2013-01-07
CN102597329B (zh) 2015-12-16

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Effective date: 20170717