KR101751599B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Download PDF

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KR101751599B1
KR101751599B1 KR1020150123774A KR20150123774A KR101751599B1 KR 101751599 B1 KR101751599 B1 KR 101751599B1 KR 1020150123774 A KR1020150123774 A KR 1020150123774A KR 20150123774 A KR20150123774 A KR 20150123774A KR 101751599 B1 KR101751599 B1 KR 101751599B1
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gas
substrate
chamber
processing chamber
supplying
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KR20160027934A (ko
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류지 야마모토
츠카사 가마쿠라
요시로 히로세
사토시 시마모토
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6528—In-situ cleaning after layer formation, e.g. removing process residues
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    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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    • H10P14/6326—Deposition processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020150123774A 2014-09-02 2015-09-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Active KR101751599B1 (ko)

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Application Number Priority Date Filing Date Title
JP2014177763A JP6009513B2 (ja) 2014-09-02 2014-09-02 半導体装置の製造方法、基板処理装置およびプログラム
JPJP-P-2014-177763 2014-09-02

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Publication Number Publication Date
KR20160027934A KR20160027934A (ko) 2016-03-10
KR101751599B1 true KR101751599B1 (ko) 2017-06-27

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US (1) US9640387B2 (https=)
JP (1) JP6009513B2 (https=)
KR (1) KR101751599B1 (https=)
CN (1) CN105390378B (https=)
TW (1) TWI585884B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20200107834A (ko) * 2019-03-06 2020-09-16 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
KR20210158171A (ko) * 2020-06-23 2021-12-30 주식회사 원익아이피에스 기판처리방법 및 이에 사용되는 기판처리장치

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US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
CN108780743B (zh) * 2016-03-22 2023-05-02 株式会社国际电气 基板处理装置、半导体装置的制造方法以及记录介质
KR102139245B1 (ko) * 2016-06-20 2020-07-29 어플라이드 머티어리얼스, 인코포레이티드 고온에서 프로세싱 챔버 내의 붕소-탄소 잔류물들을 제거하기 위한 세정 프로세스
JP6368743B2 (ja) 2016-06-22 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
JP6719993B2 (ja) * 2016-06-30 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
WO2018084214A1 (ja) * 2016-11-02 2018-05-11 株式会社アルバック 真空処理装置
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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