JP6009513B2 - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置およびプログラム Download PDF

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JP6009513B2
JP6009513B2 JP2014177763A JP2014177763A JP6009513B2 JP 6009513 B2 JP6009513 B2 JP 6009513B2 JP 2014177763 A JP2014177763 A JP 2014177763A JP 2014177763 A JP2014177763 A JP 2014177763A JP 6009513 B2 JP6009513 B2 JP 6009513B2
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gas
processing chamber
substrate
heater
processing
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JP2016051864A (ja
JP2016051864A5 (https=
Inventor
山本　隆治
隆治 山本
司 鎌倉
司 鎌倉
義朗 ▲ひろせ▼
義朗 ▲ひろせ▼
島本　聡
聡 島本
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2014177763A priority Critical patent/JP6009513B2/ja
Priority to CN201510416824.1A priority patent/CN105390378B/zh
Priority to TW104123434A priority patent/TWI585884B/zh
Priority to US14/838,793 priority patent/US9640387B2/en
Priority to KR1020150123774A priority patent/KR101751599B1/ko
Publication of JP2016051864A publication Critical patent/JP2016051864A/ja
Publication of JP2016051864A5 publication Critical patent/JP2016051864A5/ja
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
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    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2014177763A 2014-09-02 2014-09-02 半導体装置の製造方法、基板処理装置およびプログラム Active JP6009513B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014177763A JP6009513B2 (ja) 2014-09-02 2014-09-02 半導体装置の製造方法、基板処理装置およびプログラム
CN201510416824.1A CN105390378B (zh) 2014-09-02 2015-07-15 半导体器件的制造方法及衬底处理装置
TW104123434A TWI585884B (zh) 2014-09-02 2015-07-20 半導體裝置之製造方法、基板處理裝置及記錄媒體
US14/838,793 US9640387B2 (en) 2014-09-02 2015-08-28 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KR1020150123774A KR101751599B1 (ko) 2014-09-02 2015-09-01 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

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JP2014177763A JP6009513B2 (ja) 2014-09-02 2014-09-02 半導体装置の製造方法、基板処理装置およびプログラム

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JP2016051864A JP2016051864A (ja) 2016-04-11
JP2016051864A5 JP2016051864A5 (https=) 2016-06-23
JP6009513B2 true JP6009513B2 (ja) 2016-10-19

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US (1) US9640387B2 (https=)
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TW (1) TWI585884B (https=)

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CN108780743B (zh) * 2016-03-22 2023-05-02 株式会社国际电气 基板处理装置、半导体装置的制造方法以及记录介质
KR102139245B1 (ko) * 2016-06-20 2020-07-29 어플라이드 머티어리얼스, 인코포레이티드 고온에서 프로세싱 챔버 내의 붕소-탄소 잔류물들을 제거하기 위한 세정 프로세스
JP6368743B2 (ja) 2016-06-22 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
JP6719993B2 (ja) * 2016-06-30 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
WO2018084214A1 (ja) * 2016-11-02 2018-05-11 株式会社アルバック 真空処理装置
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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