TWI585884B - 半導體裝置之製造方法、基板處理裝置及記錄媒體 - Google Patents

半導體裝置之製造方法、基板處理裝置及記錄媒體 Download PDF

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TWI585884B
TWI585884B TW104123434A TW104123434A TWI585884B TW I585884 B TWI585884 B TW I585884B TW 104123434 A TW104123434 A TW 104123434A TW 104123434 A TW104123434 A TW 104123434A TW I585884 B TWI585884 B TW I585884B
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gas
processing chamber
substrate
processing
support table
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TW104123434A
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TW201611159A (zh
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山本隆治
鎌倉司
廣瀨義朗
島本聰
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日立國際電氣股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6528—In-situ cleaning after layer formation, e.g. removing process residues
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
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    • H10P14/69—Inorganic materials
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    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
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    • H10P72/04—Apparatus for manufacture or treatment
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
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    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
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    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW104123434A 2014-09-02 2015-07-20 半導體裝置之製造方法、基板處理裝置及記錄媒體 TWI585884B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014177763A JP6009513B2 (ja) 2014-09-02 2014-09-02 半導体装置の製造方法、基板処理装置およびプログラム

Publications (2)

Publication Number Publication Date
TW201611159A TW201611159A (zh) 2016-03-16
TWI585884B true TWI585884B (zh) 2017-06-01

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TW104123434A TWI585884B (zh) 2014-09-02 2015-07-20 半導體裝置之製造方法、基板處理裝置及記錄媒體

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Country Link
US (1) US9640387B2 (https=)
JP (1) JP6009513B2 (https=)
KR (1) KR101751599B1 (https=)
CN (1) CN105390378B (https=)
TW (1) TWI585884B (https=)

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CN108780743B (zh) * 2016-03-22 2023-05-02 株式会社国际电气 基板处理装置、半导体装置的制造方法以及记录介质
KR102139245B1 (ko) * 2016-06-20 2020-07-29 어플라이드 머티어리얼스, 인코포레이티드 고온에서 프로세싱 챔버 내의 붕소-탄소 잔류물들을 제거하기 위한 세정 프로세스
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JP6719993B2 (ja) * 2016-06-30 2020-07-08 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
WO2018084214A1 (ja) * 2016-11-02 2018-05-11 株式会社アルバック 真空処理装置
JP6814057B2 (ja) * 2017-01-27 2021-01-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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KR20210062700A (ko) * 2018-10-02 2021-05-31 에바텍 아크티엔게젤샤프트 플라즈마 강화 원자층 증착(peald) 장치
JP7256263B2 (ja) * 2018-10-05 2023-04-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の高温原子層堆積
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
JP6857675B2 (ja) 2019-03-06 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6960953B2 (ja) * 2019-03-20 2021-11-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
JP7275927B2 (ja) * 2019-06-28 2023-05-18 日新電機株式会社 スパッタ装置の使用方法
JP7270863B1 (ja) 2019-11-29 2023-05-10 東京エレクトロン株式会社 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
JP7229904B2 (ja) * 2019-11-29 2023-02-28 東京エレクトロン株式会社 プラズマ処理装置における載置台のクリーニング方法およびプラズマ処理装置
US11566324B2 (en) * 2020-02-27 2023-01-31 Applied Materials, Inc. Conditioning treatment for ALD productivity
JP7416210B2 (ja) * 2020-03-26 2024-01-17 東京エレクトロン株式会社 炭化ケイ素含有膜を形成する方法及び装置
KR102927077B1 (ko) * 2020-06-23 2026-02-12 주식회사 원익아이피에스 기판처리방법 및 이에 사용되는 기판처리장치
CN112071801B (zh) * 2020-09-16 2024-05-17 北京北方华创微电子装备有限公司 顶针升降装置和半导体工艺腔室
JP7524333B2 (ja) * 2020-09-16 2024-07-29 株式会社Kokusai Electric 半導体装置の製造方法、プログラム、基板処理装置及び基板処理方法
JP7303168B2 (ja) * 2020-09-30 2023-07-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN114293174A (zh) * 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
JP7504004B2 (ja) * 2020-11-13 2024-06-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7260578B2 (ja) * 2021-03-19 2023-04-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、および、プログラム
US12012653B2 (en) * 2021-03-23 2024-06-18 Applied Materials, Inc. Cleaning assemblies for substrate processing chambers
JP7273086B2 (ja) * 2021-03-24 2023-05-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102745453B1 (ko) * 2021-12-23 2024-12-23 주식회사 원익아이피에스 기판 처리 방법 및 기판 처리 장치
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置
JP7461396B2 (ja) * 2022-03-24 2024-04-03 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020034862A1 (en) * 2000-09-19 2002-03-21 Hitachi Kokusai Electric, Inc. Method and apparatus for use in manufacturing a semiconductor device
US20050145177A1 (en) * 2003-12-30 2005-07-07 Mcswiney Michael Method and apparatus for low temperature silicon nitride deposition
US20100196626A1 (en) * 2009-02-04 2010-08-05 Applied Materials, Inc. Ground return for plasma processes
US20130065402A1 (en) * 2011-09-14 2013-03-14 Hitachi Kokusai Electric Inc. Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0383893A (ja) * 1989-08-25 1991-04-09 Sumitomo Metal Ind Ltd 気相成長装置
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
DE59900317D1 (de) * 1998-02-18 2001-11-22 Aixtron Ag Cvd-reaktor und dessen verwendung
JP2001093877A (ja) * 1999-09-22 2001-04-06 Texas Instr Japan Ltd 半導体装置の製造方法
JP2002100570A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 枚葉式気相成長装置
JP5008957B2 (ja) * 2006-11-30 2012-08-22 東京エレクトロン株式会社 シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
JP3147868U (ja) * 2008-11-06 2009-01-22 日本エー・エス・エム株式会社 基板処理装置
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
JP5807505B2 (ja) * 2011-10-14 2015-11-10 信越半導体株式会社 エピタキシャルウエーハの製造方法
JP6068130B2 (ja) 2012-12-25 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020034862A1 (en) * 2000-09-19 2002-03-21 Hitachi Kokusai Electric, Inc. Method and apparatus for use in manufacturing a semiconductor device
US20050145177A1 (en) * 2003-12-30 2005-07-07 Mcswiney Michael Method and apparatus for low temperature silicon nitride deposition
US20100196626A1 (en) * 2009-02-04 2010-08-05 Applied Materials, Inc. Ground return for plasma processes
US20130065402A1 (en) * 2011-09-14 2013-03-14 Hitachi Kokusai Electric Inc. Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI764784B (zh) * 2021-07-16 2022-05-11 天虹科技股份有限公司 雙層式遮蔽構件及具有雙層式遮蔽構件的薄膜沉積機台

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