KR101711666B1 - 고체 촬상 장치 및 그 제조 방법, 전자 기기 - Google Patents

고체 촬상 장치 및 그 제조 방법, 전자 기기 Download PDF

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Publication number
KR101711666B1
KR101711666B1 KR1020110004876A KR20110004876A KR101711666B1 KR 101711666 B1 KR101711666 B1 KR 101711666B1 KR 1020110004876 A KR1020110004876 A KR 1020110004876A KR 20110004876 A KR20110004876 A KR 20110004876A KR 101711666 B1 KR101711666 B1 KR 101711666B1
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KR
South Korea
Prior art keywords
photoelectric conversion
light
wavelength region
conversion unit
conversion portion
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KR1020110004876A
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English (en)
Korean (ko)
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KR20110090771A (ko
Inventor
아츠시 토다
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20110090771A publication Critical patent/KR20110090771A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
KR1020110004876A 2010-02-02 2011-01-18 고체 촬상 장치 및 그 제조 방법, 전자 기기 KR101711666B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010021219A JP2011159858A (ja) 2010-02-02 2010-02-02 固体撮像装置およびその製造方法、電子機器
JPJP-P-2010-021219 2010-02-02

Publications (2)

Publication Number Publication Date
KR20110090771A KR20110090771A (ko) 2011-08-10
KR101711666B1 true KR101711666B1 (ko) 2017-03-02

Family

ID=44340871

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110004876A KR101711666B1 (ko) 2010-02-02 2011-01-18 고체 촬상 장치 및 그 제조 방법, 전자 기기

Country Status (5)

Country Link
US (1) US8350349B2 (ja)
JP (1) JP2011159858A (ja)
KR (1) KR101711666B1 (ja)
CN (1) CN102169884B (ja)
TW (1) TWI455296B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012073701A (ja) * 2010-09-28 2012-04-12 Hitachi Displays Ltd 光センサ
JP5456084B2 (ja) * 2012-02-07 2014-03-26 株式会社東芝 固体撮像素子
JP2015076569A (ja) * 2013-10-11 2015-04-20 ソニー株式会社 撮像装置およびその製造方法ならびに電子機器
JP6173259B2 (ja) * 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR102233752B1 (ko) * 2014-08-18 2021-03-30 삼성전자주식회사 터치 디스플레이 패널 및 디스플레이 장치
DE102015109044B4 (de) * 2015-06-09 2020-10-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauteil zum Detektieren elektromagnetischer Strahlung
JPWO2023210660A1 (ja) * 2022-04-25 2023-11-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092392A (ja) 2001-09-18 2003-03-28 Canon Inc 撮像装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1179551A (zh) * 1996-09-30 1998-04-22 特克特朗尼克公司 具有掺氢的氦填料的等离子体寻址液晶显示面板结构的通道组件
CN1260956A (zh) * 2000-01-04 2000-07-26 中国农业科学院植物保护研究所 防治土传病害的广谱杀菌剂混合制剂
JP4626188B2 (ja) 2004-06-01 2011-02-02 ソニー株式会社 固体撮像装置
JP2005353626A (ja) * 2004-06-08 2005-12-22 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
JP4866656B2 (ja) * 2006-05-18 2012-02-01 富士フイルム株式会社 光電変換膜積層型カラー固体撮像装置
JP4983141B2 (ja) * 2006-08-04 2012-07-25 ソニー株式会社 カラーフィルタ
JP2008181965A (ja) * 2007-01-23 2008-08-07 Sharp Corp 積層型光電変換装置及びその製造方法
JP2008258474A (ja) 2007-04-06 2008-10-23 Sony Corp 固体撮像装置および撮像装置
JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP4621270B2 (ja) * 2007-07-13 2011-01-26 キヤノン株式会社 光学フィルタ
KR101447113B1 (ko) * 2008-01-15 2014-10-07 삼성전자주식회사 화합물 반도체 수직 적층 이미지 센서
JP5190537B2 (ja) * 2009-02-23 2013-04-24 パナソニック株式会社 撮像素子及びそれを備えた撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092392A (ja) 2001-09-18 2003-03-28 Canon Inc 撮像装置

Also Published As

Publication number Publication date
CN102169884B (zh) 2015-04-22
US20110186952A1 (en) 2011-08-04
JP2011159858A (ja) 2011-08-18
TW201143061A (en) 2011-12-01
CN102169884A (zh) 2011-08-31
US8350349B2 (en) 2013-01-08
TWI455296B (zh) 2014-10-01
KR20110090771A (ko) 2011-08-10

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