KR101703017B1 - 기판 상에 ⅲ-ⅴ족 층을 퇴적하기 위한 방법 - Google Patents

기판 상에 ⅲ-ⅴ족 층을 퇴적하기 위한 방법 Download PDF

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KR101703017B1
KR101703017B1 KR1020147022670A KR20147022670A KR101703017B1 KR 101703017 B1 KR101703017 B1 KR 101703017B1 KR 1020147022670 A KR1020147022670 A KR 1020147022670A KR 20147022670 A KR20147022670 A KR 20147022670A KR 101703017 B1 KR101703017 B1 KR 101703017B1
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layer
group
silicon
group iii
depositing
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KR20140113724A (ko
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에롤 안토니오 씨. 샌체즈
이-치아우 후앙
신유 바오
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
KR1020147022670A 2012-01-13 2013-01-09 기판 상에 ⅲ-ⅴ족 층을 퇴적하기 위한 방법 Active KR101703017B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261586184P 2012-01-13 2012-01-13
US61/586,184 2012-01-13
US13/736,504 2013-01-08
US13/736,504 US9299560B2 (en) 2012-01-13 2013-01-08 Methods for depositing group III-V layers on substrates
PCT/US2013/020804 WO2013106411A1 (en) 2012-01-13 2013-01-09 Methods for depositing group iii-v layers on substrates

Publications (2)

Publication Number Publication Date
KR20140113724A KR20140113724A (ko) 2014-09-24
KR101703017B1 true KR101703017B1 (ko) 2017-02-06

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Country Status (6)

Country Link
US (1) US9299560B2 (https=)
JP (1) JP6109852B2 (https=)
KR (1) KR101703017B1 (https=)
CN (2) CN107507763A (https=)
TW (1) TWI566277B (https=)
WO (1) WO2013106411A1 (https=)

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US8647439B2 (en) * 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
GB201311101D0 (en) * 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
US10118828B2 (en) * 2015-10-02 2018-11-06 Asm Ip Holding B.V. Tritertbutyl aluminum reactants for vapor deposition
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
JP6769486B2 (ja) 2016-08-31 2020-10-14 富士通株式会社 半導体結晶基板の製造方法、赤外線検出装置の製造方法
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
JP7099398B2 (ja) 2019-04-18 2022-07-12 株式会社Sumco 気相成長方法及び気相成長装置
KR102737089B1 (ko) 2020-07-03 2024-12-03 삼성디스플레이 주식회사 표시 장치

Citations (3)

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US20050026392A1 (en) 2001-12-21 2005-02-03 Holger Jurgensen Method for depositing III-V semiconductor layers on a non-III-V substrate
US20100163931A1 (en) 2006-03-20 2010-07-01 Kanagawa Academy Of Science And Technology Group iii-v nitride layer and method for producing the same
US20110104875A1 (en) 2009-10-30 2011-05-05 Wojtczak William A Selective silicon etch process

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US20050026392A1 (en) 2001-12-21 2005-02-03 Holger Jurgensen Method for depositing III-V semiconductor layers on a non-III-V substrate
US20100163931A1 (en) 2006-03-20 2010-07-01 Kanagawa Academy Of Science And Technology Group iii-v nitride layer and method for producing the same
US20110104875A1 (en) 2009-10-30 2011-05-05 Wojtczak William A Selective silicon etch process

Also Published As

Publication number Publication date
JP2015512139A (ja) 2015-04-23
CN107507763A (zh) 2017-12-22
US20130183815A1 (en) 2013-07-18
TWI566277B (zh) 2017-01-11
TW201331989A (zh) 2013-08-01
JP6109852B2 (ja) 2017-04-05
CN104040706A (zh) 2014-09-10
CN104040706B (zh) 2017-08-08
KR20140113724A (ko) 2014-09-24
US9299560B2 (en) 2016-03-29
WO2013106411A1 (en) 2013-07-18

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