KR101699815B1 - 기상 성장 장치 - Google Patents

기상 성장 장치 Download PDF

Info

Publication number
KR101699815B1
KR101699815B1 KR1020140072118A KR20140072118A KR101699815B1 KR 101699815 B1 KR101699815 B1 KR 101699815B1 KR 1020140072118 A KR1020140072118 A KR 1020140072118A KR 20140072118 A KR20140072118 A KR 20140072118A KR 101699815 B1 KR101699815 B1 KR 101699815B1
Authority
KR
South Korea
Prior art keywords
gas
gas flow
central
transverse
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140072118A
Other languages
English (en)
Korean (ko)
Other versions
KR20140145564A (ko
Inventor
타쿠미 야마다
유우스케 사토
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 뉴플레어 테크놀로지 filed Critical 가부시키가이샤 뉴플레어 테크놀로지
Publication of KR20140145564A publication Critical patent/KR20140145564A/ko
Application granted granted Critical
Publication of KR101699815B1 publication Critical patent/KR101699815B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140072118A 2013-06-13 2014-06-13 기상 성장 장치 Active KR101699815B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-124847 2013-06-13
JP2013124847A JP6199619B2 (ja) 2013-06-13 2013-06-13 気相成長装置

Publications (2)

Publication Number Publication Date
KR20140145564A KR20140145564A (ko) 2014-12-23
KR101699815B1 true KR101699815B1 (ko) 2017-01-25

Family

ID=52018122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140072118A Active KR101699815B1 (ko) 2013-06-13 2014-06-13 기상 성장 장치

Country Status (4)

Country Link
US (1) US9803282B2 (enExample)
JP (1) JP6199619B2 (enExample)
KR (1) KR101699815B1 (enExample)
TW (1) TWI574306B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
JP6193284B2 (ja) * 2015-03-18 2017-09-06 株式会社東芝 流路構造、吸排気部材、及び処理装置
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
NL2015215B1 (en) 2015-07-23 2017-02-08 Meyer Burger (Netherlands) B V Programmable deposition apparatus.
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US20180077437A1 (en) * 2016-09-09 2018-03-15 Barrie Hansen Parallel Video Streaming
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
TWI754765B (zh) * 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件
US11149350B2 (en) * 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
CN108195607A (zh) * 2018-02-02 2018-06-22 中国科学院西安光学精密机械研究所 一种火星表面环境模拟试验装置及方法
KR102641752B1 (ko) * 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
TW202146691A (zh) * 2020-02-13 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法
TW202147492A (zh) * 2020-06-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 噴淋板、基板處理裝置、基板處理方法
CN120138791A (zh) * 2023-12-12 2025-06-13 中微半导体设备(上海)股份有限公司 一种进气装置及气相沉积设备

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701682A (en) * 1970-07-02 1972-10-31 Texas Instruments Inc Thin film deposition system
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH10158841A (ja) * 1996-11-27 1998-06-16 Shibaura Eng Works Co Ltd 気相成長装置
GB9712400D0 (en) * 1997-06-16 1997-08-13 Trikon Equip Ltd Shower head
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
JP3962509B2 (ja) * 1999-09-16 2007-08-22 株式会社東芝 気相成長装置
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP4703810B2 (ja) * 2000-03-07 2011-06-15 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US6533867B2 (en) * 2000-11-20 2003-03-18 Applied Epi Inc Surface sealing showerhead for vapor deposition reactor having integrated flow diverters
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
JP3990881B2 (ja) * 2001-07-23 2007-10-17 株式会社日立製作所 半導体製造装置及びそのクリーニング方法
DE10392894T5 (de) * 2002-07-05 2005-06-30 Tokyo Electron Ltd. Verfahren zur Reinigung eines Substratverarbeitungsapparats und ein Substratverarbeitungsapparat
US7018940B2 (en) * 2002-12-30 2006-03-28 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP4306403B2 (ja) * 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
KR100513920B1 (ko) * 2003-10-31 2005-09-08 주식회사 시스넥스 화학기상증착 반응기
KR100731164B1 (ko) * 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
JP4344949B2 (ja) * 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
JP5069427B2 (ja) * 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
KR100849929B1 (ko) * 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
JP4981485B2 (ja) * 2007-03-05 2012-07-18 株式会社ニューフレアテクノロジー 気相成長方法および気相成長装置
JP5034594B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US20090095222A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
EP3471130A1 (en) * 2008-12-04 2019-04-17 Veeco Instruments Inc. Chemical vapor deposition flow inlet elements and methods
US20110048325A1 (en) * 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
JP2010238810A (ja) * 2009-03-30 2010-10-21 Sharp Corp Ｉｉｉ−ｖ族化合物半導体薄膜結晶の気相成長方法および気相成長装置
KR101064210B1 (ko) * 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
WO2011017222A2 (en) * 2009-08-04 2011-02-10 Applied Materials, Inc. Method and apparatus for dry cleaning a cooled showerhead
US20110117728A1 (en) * 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US8409352B2 (en) * 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
US20110244663A1 (en) * 2010-04-01 2011-10-06 Applied Materials, Inc. Forming a compound-nitride structure that includes a nucleation layer
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US20120000490A1 (en) * 2010-07-01 2012-01-05 Applied Materials, Inc. Methods for enhanced processing chamber cleaning
US8460466B2 (en) * 2010-08-02 2013-06-11 Veeco Instruments Inc. Exhaust for CVD reactor
JP5715361B2 (ja) * 2010-09-08 2015-05-07 東京エレクトロン株式会社 クリーニング方法
JP5476269B2 (ja) 2010-09-29 2014-04-23 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6038618B2 (ja) * 2011-12-15 2016-12-07 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
WO2013136482A1 (ja) * 2012-03-15 2013-09-19 株式会社島津製作所 放電イオン化電流検出器及びそのエージング処理方法
CN103388132B (zh) * 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
JP6134522B2 (ja) * 2013-01-30 2017-05-24 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6157942B2 (ja) * 2013-06-13 2017-07-05 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6180208B2 (ja) * 2013-07-08 2017-08-16 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US9502242B2 (en) * 2014-02-05 2016-11-22 Applied Materials, Inc. Indium gallium zinc oxide layers for thin film transistors
US9214340B2 (en) * 2014-02-05 2015-12-15 Applied Materials, Inc. Apparatus and method of forming an indium gallium zinc oxide layer

Also Published As

Publication number Publication date
TW201511085A (zh) 2015-03-16
TWI574306B (zh) 2017-03-11
JP6199619B2 (ja) 2017-09-20
US9803282B2 (en) 2017-10-31
KR20140145564A (ko) 2014-12-23
JP2015002208A (ja) 2015-01-05
US20140366803A1 (en) 2014-12-18

Similar Documents

Publication Publication Date Title
KR101699815B1 (ko) 기상 성장 장치
KR101598911B1 (ko) 기상 성장 장치 및 기상 성장 방법
KR101610638B1 (ko) 기상 성장 장치 및 기상 성장 방법
KR101640918B1 (ko) 기상 성장 장치 및 기상 성장 방법
KR101879175B1 (ko) 화학 기상 증착 장치
TWI513852B (zh) 化學氣相沉積設備
JP6370630B2 (ja) 気相成長装置および気相成長方法
JP6606403B2 (ja) シャワープレート、気相成長装置および気相成長方法
KR101779447B1 (ko) 기상 성장 장치 및 기상 성장 방법
JP6386901B2 (ja) 気相成長装置及び気相成長方法
KR20150004283A (ko) 기상 성장 장치 및 기상 성장 방법
KR101598913B1 (ko) 기상 성장 장치 및 기상 성장 방법
JP2016081945A (ja) 気相成長装置および気相成長方法
KR20150101236A (ko) 가스 공급의 개별 제어가 가능한 모듈형 화학기상 증착장치
JP2017135170A (ja) 気相成長装置及び気相成長方法
JP2012124326A (ja) 化合物半導体エピタキシャルウェハ製造装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140613

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150625

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20151228

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20160714

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20151228

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20150625

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

X091 Application refused [patent]
AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20160714

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20160225

Comment text: Amendment to Specification, etc.

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20160819

Patent event code: PE09021S02D

AMND Amendment
PX0701 Decision of registration after re-examination

Patent event date: 20161025

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20160822

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20160816

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20160714

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20160225

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170119

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170120

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20200107

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20200107

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20210108

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20211222

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20241219

Start annual number: 9

End annual number: 9