KR101690056B1 - Ｈｖｐｅ 챔버 하드웨어 - Google Patents

Ｈｖｐｅ 챔버 하드웨어 Download PDF

Info

Publication number
KR101690056B1
KR101690056B1 KR1020117026834A KR20117026834A KR101690056B1 KR 101690056 B1 KR101690056 B1 KR 101690056B1 KR 1020117026834 A KR1020117026834 A KR 1020117026834A KR 20117026834 A KR20117026834 A KR 20117026834A KR 101690056 B1 KR101690056 B1 KR 101690056B1
Authority
KR
South Korea
Prior art keywords
chamber
gas
reaction product
precursor
chamber body
Prior art date
Application number
KR1020117026834A
Other languages
English (en)
Korean (ko)
Other versions
KR20120003483A (ko
Inventor
테츠야 이시카와
데이비드 에이치. 쿠아치
안즈홍 창
올가 크릴리우크
유리 멜니크
하르수크딥 에스. 라티아
손 티. 응우옌
릴리 팡
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20120003483A publication Critical patent/KR20120003483A/ko
Application granted granted Critical
Publication of KR101690056B1 publication Critical patent/KR101690056B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4673—Plural tanks or compartments with parallel flow
    • Y10T137/479—Flow dividing compartments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4673—Plural tanks or compartments with parallel flow
    • Y10T137/4807—Tank type manifold [i.e., one tank supplies or receives from at least two others]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4673—Plural tanks or compartments with parallel flow
    • Y10T137/4824—Tank within tank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7504—Removable valve head and seat unit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8376—Combined

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117026834A 2009-04-10 2010-04-09 Ｈｖｐｅ 챔버 하드웨어 KR101690056B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US16839909P 2009-04-10 2009-04-10
US61/168,399 2009-04-10
US17263009P 2009-04-24 2009-04-24
US61/172,630 2009-04-24
US23087709P 2009-08-03 2009-08-03
US61/230,877 2009-08-03
US12/637,019 2009-12-14
US12/637,019 US8568529B2 (en) 2009-04-10 2009-12-14 HVPE chamber hardware
PCT/US2010/030492 WO2010118293A2 (en) 2009-04-10 2010-04-09 Hvpe chamber hardware

Publications (2)

Publication Number Publication Date
KR20120003483A KR20120003483A (ko) 2012-01-10
KR101690056B1 true KR101690056B1 (ko) 2016-12-27

Family

ID=42933312

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117026834A KR101690056B1 (ko) 2009-04-10 2010-04-09 Ｈｖｐｅ 챔버 하드웨어
KR1020117026829A KR101665304B1 (ko) 2009-04-10 2010-04-09 Ｈｖｐｅ 전구체 소오스 하드웨어

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117026829A KR101665304B1 (ko) 2009-04-10 2010-04-09 Ｈｖｐｅ 전구체 소오스 하드웨어

Country Status (5)

Country Link
US (2) US8491720B2 (zh)
KR (2) KR101690056B1 (zh)
CN (3) CN102414792B (zh)
TW (2) TWI503437B (zh)
WO (2) WO2010118295A2 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
CN102766902B (zh) * 2011-05-05 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 工艺腔室装置和具有该工艺腔室装置的基片处理设备
US9303318B2 (en) * 2011-10-20 2016-04-05 Applied Materials, Inc. Multiple complementary gas distribution assemblies
CN103014846A (zh) * 2013-01-14 2013-04-03 东莞市中镓半导体科技有限公司 一种材料气相外延用同心圆环喷头结构
US9327252B2 (en) 2013-03-15 2016-05-03 Applied Materials, Inc. Compact device for enhancing the mixing of gaseous species
US9373529B2 (en) * 2013-10-23 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Process tool having third heating source and method of using the same
USD767112S1 (en) * 2015-04-15 2016-09-20 K&N Engineering, Inc. Vent breather
JP6565502B2 (ja) * 2015-09-03 2019-08-28 株式会社島津製作所 成膜装置及び成膜方法
CN108070848A (zh) * 2016-11-11 2018-05-25 优材科技有限公司 加热器模块、薄膜沉积装置及方法
KR102165760B1 (ko) * 2018-02-12 2020-10-14 전주대학교 산학협력단 Hvpe반응기
CN109468680A (zh) * 2018-12-19 2019-03-15 东莞市中镓半导体科技有限公司 一种应用于氢化物气相外延设备的气体预热装置
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
CN114807886B (zh) * 2022-04-13 2024-05-17 北京北方华创微电子装备有限公司 工艺腔室及工艺方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050212001A1 (en) 2001-07-06 2005-09-29 Technologies And Devices International, Inc. Method for achieving low defect density AlGaN single crystal boules
US6969426B1 (en) 2002-02-26 2005-11-29 Bliss David F Forming improved metal nitrides
JP2007154297A (ja) 2005-12-08 2007-06-21 Tokyo Electron Ltd 成膜方法および成膜装置
US7438761B2 (en) 2000-09-01 2008-10-21 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same

Family Cites Families (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3063867A (en) 1958-12-16 1962-11-13 Western Electric Co Deposition and measurement of layer thickness
US4286436A (en) * 1980-06-16 1981-09-01 Chicago Bridge & Iron Company Falling film freeze exchanger
US4851295A (en) * 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
US4750975A (en) * 1986-03-17 1988-06-14 Uni-Frac, Inc. Vapor/liquid contact column structure
US5037624A (en) * 1987-03-24 1991-08-06 Advanced Technology Materials Inc. Composition, apparatus, and process, for sorption of gaseous compounds of group II-VII elements
US5348911A (en) * 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
USD329839S (en) 1990-01-31 1992-09-29 Hohner Automation Societe Anonyme Incremental coder
WO1992022084A1 (en) * 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5359788A (en) 1993-12-22 1994-11-01 Gell Jr Harold A Coffee roaster
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JPH09501612A (ja) 1994-04-08 1997-02-18 マーク エー． レイ， 選択的プラズマ成長
GB9411911D0 (en) 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5715361A (en) 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5636320A (en) 1995-05-26 1997-06-03 International Business Machines Corporation Sealed chamber with heating lamps provided within transparent tubes
JPH0945670A (ja) 1995-07-29 1997-02-14 Hewlett Packard Co <Hp> Ｉｉｉ族−ｎ系結晶の気相エッチング方法および再成長方法
US5827427A (en) * 1996-03-11 1998-10-27 Kinetico Incorporated Tank assembly
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US6533874B1 (en) * 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6286451B1 (en) 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6254772B1 (en) * 1998-01-15 2001-07-03 Yiu Chau Chau Backwashable filtration system
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6101816A (en) * 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6218280B1 (en) 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6373114B1 (en) * 1998-10-23 2002-04-16 Micron Technology, Inc. Barrier in gate stack for improved gate dielectric integrity
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
KR100304664B1 (ko) * 1999-02-05 2001-09-26 윤종용 ＧａＮ막 제조 방법
US6309465B1 (en) 1999-02-18 2001-10-30 Aixtron Ag. CVD reactor
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US6410433B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6268288B1 (en) * 1999-04-27 2001-07-31 Tokyo Electron Limited Plasma treated thermal CVD of TaN films from tantalum halide precursors
US6413860B1 (en) * 1999-04-27 2002-07-02 Tokyo Electron Limited PECVD of Ta films from tanatalum halide precursors
US6410432B1 (en) * 1999-04-27 2002-06-25 Tokyo Electron Limited CVD of integrated Ta and TaNx films from tantalum halide precursors
US6265311B1 (en) * 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
EP1115147A4 (en) 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6444038B1 (en) * 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US6569765B1 (en) 1999-08-26 2003-05-27 Cbl Technologies, Inc Hybrid deposition system and methods
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
US6998152B2 (en) * 1999-12-20 2006-02-14 Micron Technology, Inc. Chemical vapor deposition methods utilizing ionic liquids
US6897119B1 (en) * 1999-12-22 2005-05-24 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
DE50100603D1 (de) 2000-02-04 2003-10-16 Aixtron Ag Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6517634B2 (en) 2000-02-28 2003-02-11 Applied Materials, Inc. Chemical vapor deposition chamber lid assembly
US6475902B1 (en) * 2000-03-10 2002-11-05 Applied Materials, Inc. Chemical vapor deposition of niobium barriers for copper metallization
JP4849705B2 (ja) 2000-03-24 2012-01-11 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成導入部材及び誘電体
CN1331199C (zh) 2000-04-17 2007-08-08 马特森技术公司 用于生成四氮化三硅薄膜的超薄氧氮化物的uv预处理方法
DE60106675T2 (de) * 2000-05-31 2005-12-01 Shipley Co., L.L.C., Marlborough Verdampfer
US6837251B1 (en) * 2000-06-21 2005-01-04 Air Products And Chemicals, Inc. Multiple contents container assembly for ultrapure solvent purging
US6440495B1 (en) * 2000-08-03 2002-08-27 Applied Materials, Inc. Chemical vapor deposition of ruthenium films for metal electrode applications
US7687888B2 (en) * 2000-08-04 2010-03-30 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US6616870B1 (en) 2000-08-07 2003-09-09 Shipley Company, L.L.C. Method of producing high aspect ratio domes by vapor deposition
DE10043601A1 (de) 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10048759A1 (de) 2000-09-29 2002-04-11 Aixtron Gmbh Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD
DE10056029A1 (de) 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
DE10057134A1 (de) 2000-11-17 2002-05-23 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens
US6905547B1 (en) * 2000-12-21 2005-06-14 Genus, Inc. Method and apparatus for flexible atomic layer deposition
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
AU2002252566A1 (en) 2001-03-30 2002-10-15 Technologies And Devices International Inc. Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
DE10118130A1 (de) 2001-04-11 2002-10-17 Aixtron Ag Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase
DE10124609B4 (de) 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6648966B2 (en) 2001-08-01 2003-11-18 Crystal Photonics, Incorporated Wafer produced thereby, and associated methods and devices using the wafer
US6756318B2 (en) * 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
CA2464664C (en) * 2001-10-12 2012-02-07 Polymer & Steel Technologies Holding Company, L.L.C. Composite pressure vessel assembly and method
TW200300701A (en) * 2001-11-30 2003-06-16 Asml Us Inc High flow rate bubbler system and method
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
JP2006512748A (ja) 2001-12-21 2006-04-13 アイクストロン、アーゲー Ｉｉｉ−ｖ半導体皮膜を非ｉｉｉ−ｖ基板に沈積する方法
US6620225B2 (en) * 2002-01-10 2003-09-16 Advanced Technology Materials, Inc. Adsorbents for low vapor pressure fluid storage and delivery
US20050239675A1 (en) * 2002-04-01 2005-10-27 Munzer Makansi Carrier foam to enhance liquid functional performance
US20030192430A1 (en) * 2002-04-11 2003-10-16 Pearlstein Ronald Martin Helical built-in purifier for gas supply cylinders
CN1324772C (zh) * 2002-06-19 2007-07-04 日本电信电话株式会社 半导体发光器件
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
JP4352783B2 (ja) 2002-08-23 2009-10-28 東京エレクトロン株式会社 ガス供給系及び処理システム
US7115896B2 (en) 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
US6911065B2 (en) * 2002-12-26 2005-06-28 Matheson Tri-Gas, Inc. Method and system for supplying high purity fluid
US7018940B2 (en) 2002-12-30 2006-03-28 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP4026529B2 (ja) 2003-04-10 2007-12-26 東京エレクトロン株式会社 シャワーヘッド構造及び処理装置
US7172646B2 (en) * 2003-04-15 2007-02-06 Air Products And Chemicals, Inc. Reactive liquid based gas storage and delivery systems
EP1629522A4 (en) 2003-05-30 2008-07-23 Aviza Tech Inc GAS DISTRIBUTION SYSTEM
US7170095B2 (en) * 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
US7156380B2 (en) * 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
DE102004009130A1 (de) 2004-02-25 2005-09-15 Aixtron Ag Einlasssystem für einen MOCVD-Reaktor
US7329470B2 (en) * 2004-05-26 2008-02-12 Societe Bic Apparatus and method for in situ production of fuel for a fuel cell
US7303607B2 (en) * 2004-06-14 2007-12-04 Air Products And Chemicals, Inc. Liquid media containing Lewis acidic reactive compounds for storage and delivery of Lewis basic gases
GB2415707A (en) * 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
US7396381B2 (en) * 2004-07-08 2008-07-08 Air Products And Chemicals, Inc. Storage and delivery systems for gases held in liquid medium
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
JP2006120857A (ja) 2004-10-21 2006-05-11 Hitachi Cable Ltd 気相成長装置およびこれを用いた半導体基板の製造方法および半導体基板
US20060185597A1 (en) * 2004-11-29 2006-08-24 Kenji Suzuki Film precursor evaporation system and method of using
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
DE102004058521A1 (de) 2004-12-04 2006-06-14 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter
KR100578089B1 (ko) 2004-12-22 2006-05-10 주식회사 시스넥스 수소화물기상증착 반응기
US7527742B2 (en) 2005-06-27 2009-05-05 Momentive Performance Materials Inc. Etchant, method of etching, laminate formed thereby, and device
JP4696561B2 (ja) * 2005-01-14 2011-06-08 東京エレクトロン株式会社 気化装置及び処理装置
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
CN101845670A (zh) * 2005-03-10 2010-09-29 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
JP5156621B2 (ja) * 2005-03-17 2013-03-06 ノア プレシジョン リミテッド ライアビリティ カンパニー バブラー用温度制御装置
US7638058B2 (en) * 2005-04-07 2009-12-29 Matheson Tri-Gas Fluid storage and purification method and system
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7195934B2 (en) 2005-07-11 2007-03-27 Applied Materials, Inc. Method and system for deposition tuning in an epitaxial film growth apparatus
US7413649B2 (en) * 2005-07-29 2008-08-19 Gene Bittner Treatment apparatus with modular chemical containing units having one-way valve assemblies
JP4594820B2 (ja) 2005-08-03 2010-12-08 古河機械金属株式会社 ハイドライド気相成長装置、ｉｉｉ族窒化物半導体基板の製造方法
US7967911B2 (en) * 2006-04-11 2011-06-28 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
US7364991B2 (en) 2006-04-27 2008-04-29 Applied Materials, Inc. Buffer-layer treatment of MOCVD-grown nitride structures
US7585769B2 (en) 2006-05-05 2009-09-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US20080050889A1 (en) 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
JP2008066490A (ja) 2006-09-06 2008-03-21 Nippon Emc Ltd 気相成長装置
US7955569B2 (en) * 2007-03-14 2011-06-07 Hubert Patrovsky Metal halide reactor for CVD and method
US20080276860A1 (en) * 2007-05-10 2008-11-13 Burrows Brian H Cross flow apparatus and method for hydride vapor phase deposition
US20080289575A1 (en) * 2007-05-24 2008-11-27 Burrows Brian H Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy process
US7901576B2 (en) * 2007-08-06 2011-03-08 Enpress, L.L.C. Composite water treatment vessel including liquid distributor plates
US20090149008A1 (en) 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US7803337B1 (en) * 2008-02-06 2010-09-28 Vapor Point, LLC Method for treating a fluid to be scrubbed
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US9522773B2 (en) * 2009-07-09 2016-12-20 Entegris, Inc. Substantially rigid collapsible liner and flexible gusseted or non-gusseted liners and methods of manufacturing the same and methods for limiting choke-off in liners

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7438761B2 (en) 2000-09-01 2008-10-21 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
US20050212001A1 (en) 2001-07-06 2005-09-29 Technologies And Devices International, Inc. Method for achieving low defect density AlGaN single crystal boules
US6969426B1 (en) 2002-02-26 2005-11-29 Bliss David F Forming improved metal nitrides
JP2007154297A (ja) 2005-12-08 2007-06-21 Tokyo Electron Ltd 成膜方法および成膜装置

Also Published As

Publication number Publication date
CN102414792A (zh) 2012-04-11
WO2010118295A2 (en) 2010-10-14
CN102414790A (zh) 2012-04-11
TW201100575A (en) 2011-01-01
TW201114957A (en) 2011-05-01
TWI503437B (zh) 2015-10-11
TWI480432B (zh) 2015-04-11
KR20120003483A (ko) 2012-01-10
WO2010118293A3 (en) 2011-01-20
US20100258052A1 (en) 2010-10-14
US20100258049A1 (en) 2010-10-14
WO2010118295A3 (en) 2011-01-20
CN104485277A (zh) 2015-04-01
KR20120006542A (ko) 2012-01-18
US8491720B2 (en) 2013-07-23
US8568529B2 (en) 2013-10-29
WO2010118293A2 (en) 2010-10-14
CN102414792B (zh) 2014-11-05
CN104485277B (zh) 2017-06-30
KR101665304B1 (ko) 2016-10-12

Similar Documents

Publication Publication Date Title
KR101690056B1 (ko) Ｈｖｐｅ 챔버 하드웨어
JP6117169B2 (ja) 三塩化ガリウムの噴射方式
JP5575482B2 (ja) 単結晶ｉｉｉ−ｖ族半導体材料のエピタキシャル堆積法、及び堆積システム
KR101094913B1 (ko) Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
JP5575483B2 (ja) Ｉｉｉ−ｖ族半導体材料の大量製造装置
US9449859B2 (en) Multi-gas centrally cooled showerhead design
US20180171479A1 (en) Materials and coatings for a showerhead in a processing system
US8183132B2 (en) Methods for fabricating group III nitride structures with a cluster tool
TWI496935B (zh) Ｍｏｃｖｄ腔室在原位清潔後利用ｎｈ３淨化之去汙染
JP2012525718A (ja) ＨＶＰＥにおいてその場プレ−ＧａＮ堆積層を形成する方法
US8148241B2 (en) Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20130068320A1 (en) Protective material for gas delivery in a processing system
WO2010129289A2 (en) Decontamination of mocvd chamber using nh3 purge after in-situ cleaning

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant