KR101674274B1 - Iii-v 에피택셜층들을 성장시키는 방법 - Google Patents

Iii-v 에피택셜층들을 성장시키는 방법 Download PDF

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KR101674274B1
KR101674274B1 KR1020147003437A KR20147003437A KR101674274B1 KR 101674274 B1 KR101674274 B1 KR 101674274B1 KR 1020147003437 A KR1020147003437 A KR 1020147003437A KR 20147003437 A KR20147003437 A KR 20147003437A KR 101674274 B1 KR101674274 B1 KR 101674274B1
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조프 델륀
스테판 디그루트
마리안느 제르맹
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에피간 엔브이
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02612—Formation types
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
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    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/113—Isolations within a component, i.e. internal isolations
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020147003437A 2011-07-18 2012-07-06 Iii-v 에피택셜층들을 성장시키는 방법 Active KR101674274B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1112327.0A GB201112327D0 (en) 2011-07-18 2011-07-18 Method for growing III-V epitaxial layers
GB1112327.0 2011-07-18
PCT/EP2012/063317 WO2013010828A1 (en) 2011-07-18 2012-07-06 Method for growing iii-v epitaxial layers

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KR20140063593A KR20140063593A (ko) 2014-05-27
KR101674274B1 true KR101674274B1 (ko) 2016-11-08

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US (2) US9230803B2 (enExample)
EP (1) EP2735030B1 (enExample)
JP (1) JP6120841B2 (enExample)
KR (1) KR101674274B1 (enExample)
CN (1) CN103765592B (enExample)
GB (1) GB201112327D0 (enExample)
WO (1) WO2013010828A1 (enExample)

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JP2021525961A (ja) * 2018-05-29 2021-09-27 アイキューイー ピーエルシーＩＱＥ ｐｌｃ 緩衝材にわたって形成される光電子デバイス
US10741666B2 (en) * 2018-11-19 2020-08-11 Vanguard International Semiconductor Corporation High electron mobility transistor and method for forming the same
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CN113224193B (zh) * 2021-04-12 2022-06-14 华南理工大学 结合嵌入电极与钝化层结构的InGaN/GaN多量子阱蓝光探测器及其制备方法与应用
WO2022217539A1 (zh) * 2021-04-15 2022-10-20 苏州晶湛半导体有限公司 半导体结构及其制作方法
WO2024113095A1 (en) * 2022-11-28 2024-06-06 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same
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US9230803B2 (en) 2016-01-05
US20160099309A1 (en) 2016-04-07
EP2735030A1 (en) 2014-05-28
US9748331B2 (en) 2017-08-29
KR20140063593A (ko) 2014-05-27
EP2735030B1 (en) 2017-03-15
US20140167114A1 (en) 2014-06-19
WO2013010828A1 (en) 2013-01-24
CN103765592B (zh) 2017-09-19
GB201112327D0 (en) 2011-08-31
JP6120841B2 (ja) 2017-04-26
JP2014521229A (ja) 2014-08-25
CN103765592A (zh) 2014-04-30

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