KR101672833B1 - 세정 방법, 처리 장치 및 기억 매체 - Google Patents

세정 방법, 처리 장치 및 기억 매체 Download PDF

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KR101672833B1
KR101672833B1 KR1020147004113A KR20147004113A KR101672833B1 KR 101672833 B1 KR101672833 B1 KR 101672833B1 KR 1020147004113 A KR1020147004113 A KR 1020147004113A KR 20147004113 A KR20147004113 A KR 20147004113A KR 101672833 B1 KR101672833 B1 KR 101672833B1
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gas
chamber
cleaning
wafer
irradiating
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KR20140048989A (ko
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켄스케 이나이
카즈야 도바시
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020147004113A 2011-07-19 2012-07-12 세정 방법, 처리 장치 및 기억 매체 Active KR101672833B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-157955 2011-07-19
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体
PCT/JP2012/004521 WO2013011673A1 (ja) 2011-07-19 2012-07-12 洗浄方法、処理装置及び記憶媒体

Publications (2)

Publication Number Publication Date
KR20140048989A KR20140048989A (ko) 2014-04-24
KR101672833B1 true KR101672833B1 (ko) 2016-11-04

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KR1020147004113A Active KR101672833B1 (ko) 2011-07-19 2012-07-12 세정 방법, 처리 장치 및 기억 매체

Country Status (6)

Country Link
US (1) US9837260B2 (https=)
JP (1) JP5776397B2 (https=)
KR (1) KR101672833B1 (https=)
CN (1) CN103650117B (https=)
TW (1) TWI540658B (https=)
WO (1) WO2013011673A1 (https=)

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JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
KR101429732B1 (ko) * 2013-12-18 2014-08-12 주식회사 엔픽스 건식 박리 장치, 건식 박리를 위한 고속 입자 빔을 생성하는 노즐 및 고속 입자 빔을 이용한 건식 박리 방법.
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
TWI681437B (zh) * 2014-10-06 2020-01-01 美商東京威力科創Ｆｓｉ股份有限公司 以低溫流體混合物處理基板的系統及方法
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
WO2017094388A1 (ja) 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
WO2017098823A1 (ja) 2015-12-07 2017-06-15 東京エレクトロン株式会社 基板洗浄装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7297664B2 (ja) 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
JP7177069B2 (ja) 2017-01-27 2022-11-22 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 基板をプロセスチャンバ内で回転及び並進するためのシステム及び方法
US10890843B2 (en) * 2017-07-28 2021-01-12 Tokyo Electron Limited Fast imprint lithography
JP7357625B2 (ja) 2018-02-19 2023-10-06 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 制御可能なビームサイズの処理噴霧を有する小型電子機器処理システム
CN110189994A (zh) * 2018-02-23 2019-08-30 东莞新科技术研究开发有限公司 半导体表面微颗粒的处理方法
TWI776026B (zh) * 2018-06-04 2022-09-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN109545710A (zh) * 2018-09-29 2019-03-29 东方日升新能源股份有限公司 一种降低折射率的镀膜方法
US11177150B2 (en) * 2019-03-14 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and method using the same
CN112447496B (zh) * 2019-08-28 2024-10-18 东莞新科技术研究开发有限公司 半导体离子刻蚀清洗方法
WO2021085213A1 (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
US11551942B2 (en) * 2020-09-15 2023-01-10 Applied Materials, Inc. Methods and apparatus for cleaning a substrate after processing
JP7712132B2 (ja) * 2021-07-29 2025-07-23 株式会社ディスコ 加工装置
CN116013804B (zh) * 2021-10-22 2025-08-29 长鑫存储技术有限公司 清洗装置及其清洗方法

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JP2008227283A (ja) * 2007-03-14 2008-09-25 Mitsui Eng & Shipbuild Co Ltd ＳｉＣパーティクルモニタウエハの製造方法
JP2008251743A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd 基板処理システム及び基板洗浄装置

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JP2008251743A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd 基板処理システム及び基板洗浄装置

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Publication number Publication date
US20140227882A1 (en) 2014-08-14
KR20140048989A (ko) 2014-04-24
US9837260B2 (en) 2017-12-05
CN103650117A (zh) 2014-03-19
JP2013026327A (ja) 2013-02-04
JP5776397B2 (ja) 2015-09-09
TWI540658B (zh) 2016-07-01
CN103650117B (zh) 2016-09-07
WO2013011673A1 (ja) 2013-01-24
TW201330139A (zh) 2013-07-16

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