JP5776397B2 - 洗浄方法、処理装置及び記憶媒体 - Google Patents

洗浄方法、処理装置及び記憶媒体 Download PDF

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Publication number
JP5776397B2
JP5776397B2 JP2011157955A JP2011157955A JP5776397B2 JP 5776397 B2 JP5776397 B2 JP 5776397B2 JP 2011157955 A JP2011157955 A JP 2011157955A JP 2011157955 A JP2011157955 A JP 2011157955A JP 5776397 B2 JP5776397 B2 JP 5776397B2
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Prior art keywords
gas
cleaning
chamber
wafer
gas cluster
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Japanese (ja)
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JP2013026327A5 (https=
JP2013026327A (ja
Inventor
健介 井内
健介 井内
土橋　和也
和也 土橋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011157955A priority Critical patent/JP5776397B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201280033416.2A priority patent/CN103650117B/zh
Priority to KR1020147004113A priority patent/KR101672833B1/ko
Priority to PCT/JP2012/004521 priority patent/WO2013011673A1/ja
Priority to US14/232,989 priority patent/US9837260B2/en
Priority to TW101125649A priority patent/TWI540658B/zh
Publication of JP2013026327A publication Critical patent/JP2013026327A/ja
Publication of JP2013026327A5 publication Critical patent/JP2013026327A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2011157955A 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体 Active JP5776397B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体
KR1020147004113A KR101672833B1 (ko) 2011-07-19 2012-07-12 세정 방법, 처리 장치 및 기억 매체
PCT/JP2012/004521 WO2013011673A1 (ja) 2011-07-19 2012-07-12 洗浄方法、処理装置及び記憶媒体
US14/232,989 US9837260B2 (en) 2011-07-19 2012-07-12 Cleaning method, processing apparatus, and storage medium
CN201280033416.2A CN103650117B (zh) 2011-07-19 2012-07-12 清洗方法和处理装置
TW101125649A TWI540658B (zh) 2011-07-19 2012-07-17 Cleaning methods, handling devices and memory media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013026327A JP2013026327A (ja) 2013-02-04
JP2013026327A5 JP2013026327A5 (https=) 2014-04-17
JP5776397B2 true JP5776397B2 (ja) 2015-09-09

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JP2011157955A Active JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Country Status (6)

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US (1) US9837260B2 (https=)
JP (1) JP5776397B2 (https=)
KR (1) KR101672833B1 (https=)
CN (1) CN103650117B (https=)
TW (1) TWI540658B (https=)
WO (1) WO2013011673A1 (https=)

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JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
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US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
WO2017094388A1 (ja) 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
WO2017098823A1 (ja) 2015-12-07 2017-06-15 東京エレクトロン株式会社 基板洗浄装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7297664B2 (ja) 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
JP7177069B2 (ja) 2017-01-27 2022-11-22 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 基板をプロセスチャンバ内で回転及び並進するためのシステム及び方法
US10890843B2 (en) * 2017-07-28 2021-01-12 Tokyo Electron Limited Fast imprint lithography
JP7357625B2 (ja) 2018-02-19 2023-10-06 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 制御可能なビームサイズの処理噴霧を有する小型電子機器処理システム
CN110189994A (zh) * 2018-02-23 2019-08-30 东莞新科技术研究开发有限公司 半导体表面微颗粒的处理方法
TWI776026B (zh) * 2018-06-04 2022-09-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
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Also Published As

Publication number Publication date
US20140227882A1 (en) 2014-08-14
KR20140048989A (ko) 2014-04-24
US9837260B2 (en) 2017-12-05
CN103650117A (zh) 2014-03-19
JP2013026327A (ja) 2013-02-04
TWI540658B (zh) 2016-07-01
CN103650117B (zh) 2016-09-07
KR101672833B1 (ko) 2016-11-04
WO2013011673A1 (ja) 2013-01-24
TW201330139A (zh) 2013-07-16

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