CN103650117B - 清洗方法和处理装置 - Google Patents

清洗方法和处理装置 Download PDF

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Publication number
CN103650117B
CN103650117B CN201280033416.2A CN201280033416A CN103650117B CN 103650117 B CN103650117 B CN 103650117B CN 201280033416 A CN201280033416 A CN 201280033416A CN 103650117 B CN103650117 B CN 103650117B
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gas
wafer
irradiating
cleaning
gas clusters
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CN201280033416.2A
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Chinese (zh)
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CN103650117A (zh
Inventor
井内健介
土桥和也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201280033416.2A 2011-07-19 2012-07-12 清洗方法和处理装置 Active CN103650117B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体
JP2011-157955 2011-07-19
PCT/JP2012/004521 WO2013011673A1 (ja) 2011-07-19 2012-07-12 洗浄方法、処理装置及び記憶媒体

Publications (2)

Publication Number Publication Date
CN103650117A CN103650117A (zh) 2014-03-19
CN103650117B true CN103650117B (zh) 2016-09-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280033416.2A Active CN103650117B (zh) 2011-07-19 2012-07-12 清洗方法和处理装置

Country Status (6)

Country Link
US (1) US9837260B2 (https=)
JP (1) JP5776397B2 (https=)
KR (1) KR101672833B1 (https=)
CN (1) CN103650117B (https=)
TW (1) TWI540658B (https=)
WO (1) WO2013011673A1 (https=)

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JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
KR101429732B1 (ko) * 2013-12-18 2014-08-12 주식회사 엔픽스 건식 박리 장치, 건식 박리를 위한 고속 입자 빔을 생성하는 노즐 및 고속 입자 빔을 이용한 건식 박리 방법.
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
TWI681437B (zh) * 2014-10-06 2020-01-01 美商東京威力科創Ｆｓｉ股份有限公司 以低溫流體混合物處理基板的系統及方法
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
WO2017094388A1 (ja) 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
WO2017098823A1 (ja) 2015-12-07 2017-06-15 東京エレクトロン株式会社 基板洗浄装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7297664B2 (ja) 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
JP7177069B2 (ja) 2017-01-27 2022-11-22 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 基板をプロセスチャンバ内で回転及び並進するためのシステム及び方法
US10890843B2 (en) * 2017-07-28 2021-01-12 Tokyo Electron Limited Fast imprint lithography
JP7357625B2 (ja) 2018-02-19 2023-10-06 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 制御可能なビームサイズの処理噴霧を有する小型電子機器処理システム
CN110189994A (zh) * 2018-02-23 2019-08-30 东莞新科技术研究开发有限公司 半导体表面微颗粒的处理方法
TWI776026B (zh) * 2018-06-04 2022-09-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN109545710A (zh) * 2018-09-29 2019-03-29 东方日升新能源股份有限公司 一种降低折射率的镀膜方法
US11177150B2 (en) * 2019-03-14 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and method using the same
CN112447496B (zh) * 2019-08-28 2024-10-18 东莞新科技术研究开发有限公司 半导体离子刻蚀清洗方法
WO2021085213A1 (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
US11551942B2 (en) * 2020-09-15 2023-01-10 Applied Materials, Inc. Methods and apparatus for cleaning a substrate after processing
JP7712132B2 (ja) * 2021-07-29 2025-07-23 株式会社ディスコ 加工装置
CN116013804B (zh) * 2021-10-22 2025-08-29 长鑫存储技术有限公司 清洗装置及其清洗方法

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CN102770942A (zh) * 2010-03-18 2012-11-07 东京毅力科创株式会社 基板清洗装置和基板清洗方法

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JP2006278387A (ja) * 2005-03-28 2006-10-12 Dainippon Screen Mfg Co Ltd 基板洗浄装置および基板洗浄方法
CN102770942A (zh) * 2010-03-18 2012-11-07 东京毅力科创株式会社 基板清洗装置和基板清洗方法

Also Published As

Publication number Publication date
US20140227882A1 (en) 2014-08-14
KR20140048989A (ko) 2014-04-24
US9837260B2 (en) 2017-12-05
CN103650117A (zh) 2014-03-19
JP2013026327A (ja) 2013-02-04
JP5776397B2 (ja) 2015-09-09
TWI540658B (zh) 2016-07-01
KR101672833B1 (ko) 2016-11-04
WO2013011673A1 (ja) 2013-01-24
TW201330139A (zh) 2013-07-16

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