JP2013026327A5 - - Google Patents

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Publication number
JP2013026327A5
JP2013026327A5 JP2011157955A JP2011157955A JP2013026327A5 JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5 JP 2011157955 A JP2011157955 A JP 2011157955A JP 2011157955 A JP2011157955 A JP 2011157955A JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5
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JP
Japan
Prior art keywords
cleaning
chamber
irradiating
gas cluster
processed
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JP2011157955A
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English (en)
Japanese (ja)
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JP2013026327A (ja
JP5776397B2 (ja
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Priority claimed from JP2011157955A external-priority patent/JP5776397B2/ja
Priority to JP2011157955A priority Critical patent/JP5776397B2/ja
Priority to PCT/JP2012/004521 priority patent/WO2013011673A1/ja
Priority to KR1020147004113A priority patent/KR101672833B1/ko
Priority to US14/232,989 priority patent/US9837260B2/en
Priority to CN201280033416.2A priority patent/CN103650117B/zh
Priority to TW101125649A priority patent/TWI540658B/zh
Publication of JP2013026327A publication Critical patent/JP2013026327A/ja
Publication of JP2013026327A5 publication Critical patent/JP2013026327A5/ja
Publication of JP5776397B2 publication Critical patent/JP5776397B2/ja
Application granted granted Critical
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JP2011157955A 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体 Active JP5776397B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体
CN201280033416.2A CN103650117B (zh) 2011-07-19 2012-07-12 清洗方法和处理装置
KR1020147004113A KR101672833B1 (ko) 2011-07-19 2012-07-12 세정 방법, 처리 장치 및 기억 매체
US14/232,989 US9837260B2 (en) 2011-07-19 2012-07-12 Cleaning method, processing apparatus, and storage medium
PCT/JP2012/004521 WO2013011673A1 (ja) 2011-07-19 2012-07-12 洗浄方法、処理装置及び記憶媒体
TW101125649A TWI540658B (zh) 2011-07-19 2012-07-17 Cleaning methods, handling devices and memory media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013026327A JP2013026327A (ja) 2013-02-04
JP2013026327A5 true JP2013026327A5 (https=) 2014-04-17
JP5776397B2 JP5776397B2 (ja) 2015-09-09

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ID=47557874

Family Applications (1)

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JP2011157955A Active JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Country Status (6)

Country Link
US (1) US9837260B2 (https=)
JP (1) JP5776397B2 (https=)
KR (1) KR101672833B1 (https=)
CN (1) CN103650117B (https=)
TW (1) TWI540658B (https=)
WO (1) WO2013011673A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160004152A1 (en) * 2013-02-25 2016-01-07 Sean R. Kirkpatrick Defect reduction in a substrate treatment method
JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
KR101429732B1 (ko) * 2013-12-18 2014-08-12 주식회사 엔픽스 건식 박리 장치, 건식 박리를 위한 고속 입자 빔을 생성하는 노즐 및 고속 입자 빔을 이용한 건식 박리 방법.
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
US9735019B2 (en) * 2014-09-05 2017-08-15 Tel Epion Inc. Process gas enhancement for beam treatment of a substrate
JP6690915B2 (ja) * 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
KR102541747B1 (ko) 2015-11-30 2023-06-08 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 챔버 클리닝 방법
CN108369905B (zh) 2015-12-07 2022-08-23 东京毅力科创株式会社 基板清洗装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI766897B (zh) 2016-11-09 2022-06-11 美商東京威力科創Ｆｓｉ股份有限公司 用於處理一微電子基板的設備及其方法
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
US10843236B2 (en) 2017-01-27 2020-11-24 Tel Manufacturing And Engineering Of America, Inc. Systems and methods for rotating and translating a substrate in a process chamber
US10890843B2 (en) * 2017-07-28 2021-01-12 Tokyo Electron Limited Fast imprint lithography
KR20200121829A (ko) 2018-02-19 2020-10-26 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. 제어 가능한 빔 크기를 갖는 처리 스프레이를 가지는 마이크로전자 처리 시스템
CN110189994A (zh) * 2018-02-23 2019-08-30 东莞新科技术研究开发有限公司 半导体表面微颗粒的处理方法
TWI741262B (zh) * 2018-06-04 2021-10-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN109545710A (zh) * 2018-09-29 2019-03-29 东方日升新能源股份有限公司 一种降低折射率的镀膜方法
US11177150B2 (en) * 2019-03-14 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and method using the same
CN112447496B (zh) * 2019-08-28 2024-10-18 东莞新科技术研究开发有限公司 半导体离子刻蚀清洗方法
JP7334259B2 (ja) * 2019-11-01 2023-08-28 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
US11551942B2 (en) * 2020-09-15 2023-01-10 Applied Materials, Inc. Methods and apparatus for cleaning a substrate after processing
JP7712132B2 (ja) * 2021-07-29 2025-07-23 株式会社ディスコ 加工装置
CN116013804B (zh) * 2021-10-22 2025-08-29 长鑫存储技术有限公司 清洗装置及其清洗方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512106A (en) * 1993-01-27 1996-04-30 Sumitomo Heavy Industries, Ltd. Surface cleaning with argon
JPH11330033A (ja) * 1998-05-12 1999-11-30 Fraser Scient Inc エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置
US6689284B1 (en) 1999-09-29 2004-02-10 Kabushiki Kaisha Toshiba Surface treating method
JP3817417B2 (ja) * 1999-09-29 2006-09-06 株式会社東芝 表面処理方法
KR100349948B1 (ko) * 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
US20040157456A1 (en) * 2003-02-10 2004-08-12 Hall Lindsey H. Surface defect elimination using directed beam method
JP3816484B2 (ja) * 2003-12-15 2006-08-30 日本航空電子工業株式会社 ドライエッチング方法
JP2006278387A (ja) 2005-03-28 2006-10-12 Dainippon Screen Mfg Co Ltd 基板洗浄装置および基板洗浄方法
JP2007242869A (ja) 2006-03-08 2007-09-20 Tokyo Electron Ltd 基板処理システム
JP2008124356A (ja) * 2006-11-15 2008-05-29 Sekisui Chem Co Ltd 表面処理方法及び装置
JP2008227283A (ja) * 2007-03-14 2008-09-25 Mitsui Eng & Shipbuild Co Ltd ＳｉＣパーティクルモニタウエハの製造方法
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
JP2008304737A (ja) 2007-06-08 2008-12-18 Sii Nanotechnology Inc フォトマスクの欠陥修正方法及び異物除去方法
KR20100032865A (ko) * 2007-06-29 2010-03-26 아사히 가라스 가부시키가이샤 유리 기판 표면으로부터 이물질을 제거하는 방법 및 유리 기판 표면을 가공하는 방법
JP5006134B2 (ja) 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
JP5411438B2 (ja) 2008-03-18 2014-02-12 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US7776743B2 (en) * 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
CN102124544B (zh) * 2008-08-18 2013-11-13 岩谷产业株式会社 团簇喷射式加工方法、半导体元件、微机电元件及光学零件
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
JP5623104B2 (ja) 2010-03-18 2014-11-12 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US8513138B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for Si-containing and Ge-containing materials

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