KR101654118B1 - 컨텐츠 주소화 메모리의 전력 사용을 감소시키는 시스템 및 방법 - Google Patents

컨텐츠 주소화 메모리의 전력 사용을 감소시키는 시스템 및 방법 Download PDF

Info

Publication number
KR101654118B1
KR101654118B1 KR1020137007340A KR20137007340A KR101654118B1 KR 101654118 B1 KR101654118 B1 KR 101654118B1 KR 1020137007340 A KR1020137007340 A KR 1020137007340A KR 20137007340 A KR20137007340 A KR 20137007340A KR 101654118 B1 KR101654118 B1 KR 101654118B1
Authority
KR
South Korea
Prior art keywords
rows
valid data
addressing memory
content addressing
particular set
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137007340A
Other languages
English (en)
Korean (ko)
Other versions
KR20130048787A (ko
Inventor
지안 셴
당 디. 호앙
폴 디. 바세트
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20130048787A publication Critical patent/KR20130048787A/ko
Application granted granted Critical
Publication of KR101654118B1 publication Critical patent/KR101654118B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Sources (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
KR1020137007340A 2010-08-24 2011-08-24 컨텐츠 주소화 메모리의 전력 사용을 감소시키는 시스템 및 방법 Active KR101654118B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/862,277 US8984217B2 (en) 2010-08-24 2010-08-24 System and method of reducing power usage of a content addressable memory
US12/862,277 2010-08-24
PCT/US2011/048892 WO2012027429A1 (en) 2010-08-24 2011-08-24 System and method of reducing power usage of a content addressable memory

Publications (2)

Publication Number Publication Date
KR20130048787A KR20130048787A (ko) 2013-05-10
KR101654118B1 true KR101654118B1 (ko) 2016-09-05

Family

ID=44515072

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137007340A Active KR101654118B1 (ko) 2010-08-24 2011-08-24 컨텐츠 주소화 메모리의 전력 사용을 감소시키는 시스템 및 방법

Country Status (8)

Country Link
US (1) US8984217B2 (https=)
EP (1) EP2609595B1 (https=)
JP (2) JP2013537680A (https=)
KR (1) KR101654118B1 (https=)
CN (1) CN103069497B (https=)
ES (1) ES2583328T3 (https=)
HU (1) HUE028001T2 (https=)
WO (1) WO2012027429A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9214231B2 (en) * 2013-01-31 2015-12-15 Hewlett-Packard Development Company, L.P. Crossbar memory to provide content addressable functionality
US20150279463A1 (en) * 2014-03-31 2015-10-01 Dell Products, L.P. Adjustable non-volatile memory regions of dram-based memory module
JP2017097940A (ja) * 2015-11-26 2017-06-01 ルネサスエレクトロニクス株式会社 半導体装置
JP6659486B2 (ja) 2016-07-20 2020-03-04 ルネサスエレクトロニクス株式会社 半導体装置
JP2019008845A (ja) * 2017-06-22 2019-01-17 ルネサスエレクトロニクス株式会社 半導体装置
US11347514B2 (en) * 2019-02-15 2022-05-31 Apple Inc. Content-addressable memory filtering based on microarchitectural state
US10922020B2 (en) * 2019-04-12 2021-02-16 Micron Technology, Inc. Writing and querying operations in content addressable memory systems with content addressable memory buffers
US11017857B2 (en) * 2019-07-15 2021-05-25 Micron Technology, Inc. Ranged content-addressable memory
WO2023220928A1 (en) * 2022-05-17 2023-11-23 Telefonaktiebolaget Lm Ericsson (Publ) Data processing device, coprocessor and methods performed thereby

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355169B1 (ko) 1998-11-04 2002-10-09 인터내셔널 비지네스 머신즈 코포레이션 연상 메모리 및 연상 메모리의 데이타 검색 방법
JP2003045189A (ja) 2001-07-31 2003-02-14 Fujitsu Ltd 半導体メモリ
WO2004104841A1 (ja) 2003-05-21 2004-12-02 Fujitsu Limited アドレス変換バッファの電力制御方法及びその装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4246812B2 (ja) * 1997-06-12 2009-04-02 パナソニック株式会社 半導体回路及びその制御方法
US6341327B1 (en) 1998-08-13 2002-01-22 Intel Corporation Content addressable memory addressable by redundant form input
JP3478749B2 (ja) 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 連想メモリ（ｃａｍ）のワードマッチラインのプリチャージ回路および方法
JP2001023380A (ja) * 1999-07-12 2001-01-26 Kawasaki Steel Corp 連想メモリ
JP2001167585A (ja) 1999-12-09 2001-06-22 Toshiba Corp 連想記憶装置
JP2002124088A (ja) * 2000-10-13 2002-04-26 Kawasaki Microelectronics Kk 連想メモリ装置およびそのメモリデータ移動方法
US7401180B1 (en) * 2001-12-27 2008-07-15 Netlogic Microsystems, Inc. Content addressable memory (CAM) device having selectable access and method therefor
US7100013B1 (en) * 2002-08-30 2006-08-29 Nvidia Corporation Method and apparatus for partial memory power shutoff
JP2004164395A (ja) 2002-11-14 2004-06-10 Renesas Technology Corp アドレス変換装置
US20040128574A1 (en) * 2002-12-31 2004-07-01 Franco Ricci Reducing integrated circuit power consumption
JP2005011434A (ja) * 2003-06-19 2005-01-13 Mitsubishi Electric Corp ダイナミックメモリ制御装置及びこれを用いた携帯端末
JP2006040089A (ja) * 2004-07-29 2006-02-09 Fujitsu Ltd セカンドキャッシュ駆動制御回路、セカンドキャッシュ、ｒａｍ、及びセカンドキャッシュ駆動制御方法
US20080005516A1 (en) * 2006-06-30 2008-01-03 Meinschein Robert J Memory power management through high-speed intra-memory data transfer and dynamic memory address remapping
US7616468B2 (en) 2006-08-04 2009-11-10 Qualcomm Incorporated Method and apparatus for reducing power consumption in a content addressable memory
KR100911189B1 (ko) * 2007-06-11 2009-08-06 주식회사 하이닉스반도체 반도체 메모리 장치의 클럭 제어 회로
JP2010108381A (ja) * 2008-10-31 2010-05-13 Fujitsu Ltd 集積回路、集積回路の制御方法および半導体デバイス
WO2011027501A1 (ja) 2009-09-02 2011-03-10 パナソニック株式会社 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355169B1 (ko) 1998-11-04 2002-10-09 인터내셔널 비지네스 머신즈 코포레이션 연상 메모리 및 연상 메모리의 데이타 검색 방법
JP2003045189A (ja) 2001-07-31 2003-02-14 Fujitsu Ltd 半導体メモリ
WO2004104841A1 (ja) 2003-05-21 2004-12-02 Fujitsu Limited アドレス変換バッファの電力制御方法及びその装置

Also Published As

Publication number Publication date
EP2609595B1 (en) 2016-04-27
JP2016001515A (ja) 2016-01-07
ES2583328T3 (es) 2016-09-20
US8984217B2 (en) 2015-03-17
WO2012027429A1 (en) 2012-03-01
JP6081546B2 (ja) 2017-02-15
KR20130048787A (ko) 2013-05-10
HUE028001T2 (en) 2016-11-28
CN103069497B (zh) 2015-10-21
CN103069497A (zh) 2013-04-24
JP2013537680A (ja) 2013-10-03
EP2609595A1 (en) 2013-07-03
US20120054426A1 (en) 2012-03-01

Similar Documents

Publication Publication Date Title
KR101654118B1 (ko) 컨텐츠 주소화 메모리의 전력 사용을 감소시키는 시스템 및 방법
US8601234B2 (en) Configurable translation lookaside buffer
US20120054468A1 (en) Processor, apparatus, and method for memory management
Chang et al. Hybrid-type CAM design for both power and performance efficiency
KR102389644B1 (ko) 불휘발성 저항성 메모리를 위한 멀티-셀 구조
JP2005501369A5 (https=)
Imani et al. ReMAM: Low energy resistive multi-stage associative memory for energy efficient computing
WO2009108463A1 (en) Systems and methods for cache line replacement
US7330936B2 (en) System and method for power efficient memory caching
US9230634B2 (en) Refresh scheme for memory cells with next bit table
US7401180B1 (en) Content addressable memory (CAM) device having selectable access and method therefor
EP2524314A1 (en) System and method to access a portion of a level two memory and a level one memory
KR100532456B1 (ko) 메모리 컨트롤러 및 상기 메모리 컨트롤러를 구비하는반도체 장치
WO2019060121A1 (en) MEMORY REPAIR ACTIVATION
US7760556B2 (en) Data path circuit in a flash memory device
CN102789428B (zh) 一种指令高速缓冲存储器装置及其控制方法
US11031075B2 (en) High bandwidth register file circuit with high port counts for reduced bitline delay
JP2013097637A (ja) キャッシュ装置、メモリシステム及びデータ転送方法
CN101714407A (zh) 行地址保留存储单元触发电路及行地址保留存储单元装置
KR20050116042A (ko) 부정 논리곱형 플래시 메모리를 구비한 휴대용 기기에서의멀티미디어 데이터 처리 장치 및 그 방법
TW202618776A (zh) 記憶體電路及其操作方法
Hu et al. A low-power CAM with fully adiabatic driving for match-lines and search-lines
JP2009289023A (ja) キャッシュメモリ装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20130322

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140126

Patent event code: PE09021S01D

AMND Amendment
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140729

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20150428

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20140729

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20140126

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20150428

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20141201

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20140326

Comment text: Amendment to Specification, etc.

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150907

Patent event code: PE09021S01D

AMND Amendment
PX0701 Decision of registration after re-examination

Patent event date: 20160530

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20160107

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20150728

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20150428

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20141201

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20140326

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160830

Patent event code: PR07011E01D

PR1002 Payment of registration fee
PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190624

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190624

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20200624

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230626

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20240624

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20250625

Start annual number: 10

End annual number: 10