KR101632082B1 - 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 - Google Patents

정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 Download PDF

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KR101632082B1
KR101632082B1 KR1020107020375A KR20107020375A KR101632082B1 KR 101632082 B1 KR101632082 B1 KR 101632082B1 KR 1020107020375 A KR1020107020375 A KR 1020107020375A KR 20107020375 A KR20107020375 A KR 20107020375A KR 101632082 B1 KR101632082 B1 KR 101632082B1
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semiconductor chip
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KR20110031897A (ko
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칼 엔글
베르톨 한
클라우스 스트레우벨
말쿠스 클라인
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
KR1020107020375A 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법 Active KR101632082B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008034560.1 2008-07-24
DE102008034560.1A DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips

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KR1020167015687A Division KR101710849B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법

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KR20110031897A KR20110031897A (ko) 2011-03-29
KR101632082B1 true KR101632082B1 (ko) 2016-06-20

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KR1020107020375A Active KR101632082B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법
KR1020167015687A Active KR101710849B1 (ko) 2008-07-24 2009-06-25 정전기 방전 보호부를 구비한 복사 방출 반도체칩 및 그 제조 방법

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Country Link
US (1) US8710537B2 (enExample)
EP (2) EP3128555B1 (enExample)
JP (1) JP5511813B2 (enExample)
KR (2) KR101632082B1 (enExample)
CN (1) CN101971344B (enExample)
DE (1) DE102008034560B4 (enExample)
WO (1) WO2010009690A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008034560B4 (de) 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009032486A1 (de) 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010013494A1 (de) 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
DE102011011378B4 (de) * 2011-02-16 2025-10-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
TW201240146A (en) * 2011-03-16 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
TW201240147A (en) * 2011-03-22 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
CN102694098A (zh) * 2011-03-25 2012-09-26 鸿富锦精密工业（深圳）有限公司 半导体发光芯片
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101973608B1 (ko) * 2011-06-30 2019-04-29 엘지이노텍 주식회사 발광소자
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
CN102522400B (zh) * 2011-11-30 2014-11-26 晶科电子（广州）有限公司 一种防静电损伤的垂直发光器件及其制造方法
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
TWI661578B (zh) 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
TWI536605B (zh) * 2013-08-20 2016-06-01 隆達電子股份有限公司 發光二極體
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6351531B2 (ja) 2015-03-23 2018-07-04 株式会社東芝 半導体発光素子
DE102015108532A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
WO2021038635A1 (ja) * 2019-08-23 2021-03-04 シャープ株式会社 発光素子、表示装置、および発光素子の製造方法
JP7761771B2 (ja) * 2022-02-08 2025-10-28 エイエムエス－オスラム インターナショナル ゲーエムベーハー レーザダイオード部品
EP4328985A1 (en) 2022-08-24 2024-02-28 Albert-Ludwigs-Universität Freiburg Micro led, neural implant, and method of fabricating a micro led

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060880A1 (en) 2004-09-17 2006-03-23 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity
US20070069218A1 (en) 2005-09-29 2007-03-29 Ming-Sheng Chen Light-emitting diode chip

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19945134C2 (de) 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
TW492202B (en) 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
DE10147886B4 (de) 2001-09-28 2006-07-13 Osram Opto Semiconductors Gmbh Lumineszenzdiode mit vergrabenem Kontakt und Herstellungsverfahren
TWI220578B (en) 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
DE102004005269B4 (de) 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
TWI223457B (en) 2004-01-20 2004-11-01 Opto Tech Corp Light-emitting device to increase the area of active region
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
CN100386891C (zh) * 2004-07-02 2008-05-07 北京工业大学 高抗静电高效发光二极管及制作方法
JP2006086300A (ja) 2004-09-15 2006-03-30 Sanken Electric Co Ltd 保護素子を有する半導体発光装置及びその製造方法
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
US7754507B2 (en) * 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
JP5044986B2 (ja) 2006-05-17 2012-10-10 サンケン電気株式会社 半導体発光装置
CN100530622C (zh) 2007-05-14 2009-08-19 金芃 垂直结构的半导体芯片或器件及制造方法
DE102008034560B4 (de) 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060880A1 (en) 2004-09-17 2006-03-23 Samsung Electro-Mechanics Co., Ltd. Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity
US20070069218A1 (en) 2005-09-29 2007-03-29 Ming-Sheng Chen Light-emitting diode chip

Also Published As

Publication number Publication date
JP2011528855A (ja) 2011-11-24
CN101971344A (zh) 2011-02-09
EP3128555A1 (de) 2017-02-08
WO2010009690A1 (de) 2010-01-28
US20120018763A1 (en) 2012-01-26
EP2304799A1 (de) 2011-04-06
EP2304799B1 (de) 2016-10-26
US8710537B2 (en) 2014-04-29
KR101710849B1 (ko) 2017-02-27
EP3128555B1 (de) 2021-08-18
DE102008034560B4 (de) 2022-10-27
KR20110031897A (ko) 2011-03-29
DE102008034560A1 (de) 2010-02-04
KR20160075810A (ko) 2016-06-29
JP5511813B2 (ja) 2014-06-04
CN101971344B (zh) 2012-10-17

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