CN101971344B - 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法 - Google Patents

具有静电放电保护单元的辐射发射型半导体芯片及其制造方法 Download PDF

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Publication number
CN101971344B
CN101971344B CN2009801090394A CN200980109039A CN101971344B CN 101971344 B CN101971344 B CN 101971344B CN 2009801090394 A CN2009801090394 A CN 2009801090394A CN 200980109039 A CN200980109039 A CN 200980109039A CN 101971344 B CN101971344 B CN 101971344B
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semiconductor
layer
semiconductor layer
radiation
chip
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CN101971344A (zh
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卡尔·英格尔
贝特侯德·哈恩
克劳斯·施特罗伊贝尔
马库斯·克莱恩
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
CN2009801090394A 2008-07-24 2009-06-25 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法 Active CN101971344B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008034560.1 2008-07-24
DE102008034560.1A DE102008034560B4 (de) 2008-07-24 2008-07-24 Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
PCT/DE2009/000885 WO2010009690A1 (de) 2008-07-24 2009-06-25 Strahlungemittierender halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren

Publications (2)

Publication Number Publication Date
CN101971344A CN101971344A (zh) 2011-02-09
CN101971344B true CN101971344B (zh) 2012-10-17

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CN2009801090394A Active CN101971344B (zh) 2008-07-24 2009-06-25 具有静电放电保护单元的辐射发射型半导体芯片及其制造方法

Country Status (7)

Country Link
US (1) US8710537B2 (enExample)
EP (2) EP3128555B1 (enExample)
JP (1) JP5511813B2 (enExample)
KR (2) KR101632082B1 (enExample)
CN (1) CN101971344B (enExample)
DE (1) DE102008034560B4 (enExample)
WO (1) WO2010009690A1 (enExample)

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DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009032486A1 (de) 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010013494A1 (de) 2010-03-31 2011-10-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
DE102011011378B4 (de) * 2011-02-16 2025-10-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
TW201240146A (en) * 2011-03-16 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
TW201240147A (en) * 2011-03-22 2012-10-01 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip
CN102694098A (zh) * 2011-03-25 2012-09-26 鸿富锦精密工业（深圳）有限公司 半导体发光芯片
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101973608B1 (ko) * 2011-06-30 2019-04-29 엘지이노텍 주식회사 발광소자
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
CN102522400B (zh) * 2011-11-30 2014-11-26 晶科电子（广州）有限公司 一种防静电损伤的垂直发光器件及其制造方法
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012105176B4 (de) * 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
TWI661578B (zh) 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
TWI536605B (zh) * 2013-08-20 2016-06-01 隆達電子股份有限公司 發光二極體
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6351531B2 (ja) 2015-03-23 2018-07-04 株式会社東芝 半導体発光素子
DE102015108532A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102018119688B4 (de) * 2018-08-14 2024-06-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement mit einem ersten Kontaktelement, welches einen ersten und einen zweiten Abschnitt aufweist sowie Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements
WO2021038635A1 (ja) * 2019-08-23 2021-03-04 シャープ株式会社 発光素子、表示装置、および発光素子の製造方法
JP7761771B2 (ja) * 2022-02-08 2025-10-28 エイエムエス－オスラム インターナショナル ゲーエムベーハー レーザダイオード部品
EP4328985A1 (en) 2022-08-24 2024-02-28 Albert-Ludwigs-Universität Freiburg Micro led, neural implant, and method of fabricating a micro led

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CN1588657A (zh) * 2004-07-02 2005-03-02 北京工业大学 高抗静电高效发光二极管及制作方法
CN1886874A (zh) * 2003-11-28 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 带有保护二极管的发光半导体器件
CN101051630A (zh) * 2007-05-14 2007-10-10 金芃 垂直结构的半导体芯片或器件

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CN101051630A (zh) * 2007-05-14 2007-10-10 金芃 垂直结构的半导体芯片或器件

Also Published As

Publication number Publication date
JP2011528855A (ja) 2011-11-24
CN101971344A (zh) 2011-02-09
EP3128555A1 (de) 2017-02-08
WO2010009690A1 (de) 2010-01-28
US20120018763A1 (en) 2012-01-26
EP2304799A1 (de) 2011-04-06
EP2304799B1 (de) 2016-10-26
US8710537B2 (en) 2014-04-29
KR101710849B1 (ko) 2017-02-27
EP3128555B1 (de) 2021-08-18
DE102008034560B4 (de) 2022-10-27
KR20110031897A (ko) 2011-03-29
DE102008034560A1 (de) 2010-02-04
KR101632082B1 (ko) 2016-06-20
KR20160075810A (ko) 2016-06-29
JP5511813B2 (ja) 2014-06-04

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